73 Other Function Memory ICs 56

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M76DW52003BA70Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8	e0		.0001 Amp	11.6 mm	70 ns
M76DW62000A70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	STATIC RAM IS ORGANIZED AS 512K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8			.0001 Amp	11.6 mm	70 ns
M76DW63000A70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	STATIC RAM IS ORGANIZED AS 512K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8			.0001 Amp	11.6 mm	70 ns
M72DW64000B90ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words	3	FLASH+PSRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	PSEUDO STATIC RAM IS ORGANIZED AS 1M X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8			.0015 Amp	11.6 mm	90 ns
M74DW66500B70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	30 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	PSEUDO STATIC RAM IS ORGANIZED AS 2M X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8	e0		.0015 Amp	11.6 mm	70 ns
M76DW52003BA70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8	e0		.0001 Amp	11.6 mm	70 ns
M72DW64000B70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words	3	FLASH+PSRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	PSEUDO STATIC RAM IS ORGANIZED AS 1M X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8	e0		.0015 Amp	11.6 mm	70 ns
M72DW64000B70Z	STMicroelectronics	MEMORY CIRCUIT	OTHER	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL		20 mA			FLASH+PSRAM	3,3/3.3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B73					Not Qualified						.0015 Amp		70 ns
M76DW63000A90Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	STATIC RAM IS ORGANIZED AS 512K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8			.0001 Amp	11.6 mm	90 ns
M76DW52004TA70Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8			.0001 Amp	11.6 mm	70 ns
M76DW52003BA90Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8	e0		.0001 Amp	11.6 mm	90 ns
M76DW52004BA70Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8			.0001 Amp	11.6 mm	70 ns
M76DW52004TA90ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8			.0001 Amp	11.6 mm	90 ns
M76DW52003TA90ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8	e0		.0001 Amp	11.6 mm	90 ns
M76DW52003TA70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8	e0		.0001 Amp	11.6 mm	70 ns
M74DW66500B90Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL		30 mA			FLASH+SRAM	3,3/3.3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B73					Not Qualified						.0015 Amp		90 ns
M76DW52004BA70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8			.0001 Amp	11.6 mm	70 ns
M76DW52004TA90Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8			.0001 Amp	11.6 mm	90 ns
M74DW66500B90ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	30 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	PSEUDO STATIC RAM IS ORGANIZED AS 2M X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8			.0015 Amp	11.6 mm	90 ns
M76DW52004TA70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8			.0001 Amp	11.6 mm	70 ns
M76DW62000A90ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	STATIC RAM IS ORGANIZED AS 512K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8			.0001 Amp	11.6 mm	90 ns
M76DW52004BA90Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8			.0001 Amp	11.6 mm	90 ns
M76DW63000A90ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	STATIC RAM IS ORGANIZED AS 512K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8			.0001 Amp	11.6 mm	90 ns
M76DW52003TA90Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8	e0		.0001 Amp	11.6 mm	90 ns
M76DW52003TA70Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8	e0		.0001 Amp	11.6 mm	70 ns
M76DW52004BA90ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8			.0001 Amp	11.6 mm	90 ns
M76DW63000A70Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	STATIC RAM IS ORGANIZED AS 512K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8	e0		.0001 Amp	11.6 mm	70 ns
M74DW66500B70Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL		30 mA			FLASH+SRAM	3,3/3.3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B73					Not Qualified						.0015 Amp		70 ns
M72DW64000B90Z	STMicroelectronics	MEMORY CIRCUIT	OTHER	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL		20 mA			FLASH+PSRAM	3,3/3.3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B73					Not Qualified						.0015 Amp		90 ns
M76DW52003BA90ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8	e0		.0001 Amp	11.6 mm	90 ns
M76DW62000A90Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	STATIC RAM IS ORGANIZED AS 512K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8			.0001 Amp	11.6 mm	90 ns
M76DW62000A70Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	STATIC RAM IS ORGANIZED AS 512K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8			.0001 Amp	11.6 mm	70 ns
AM49DL323BGB85IS	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0	260	.000005 Amp		85 ns
AM49DL322BGB85IS	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0	260	.000005 Amp		85 ns
AM49DL324BGB70IS	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0	260	.000005 Amp		70 ns
AM49DL323BGT70IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0	260	.000005 Amp		70 ns
AM49DL322BGB70IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0	260	.000005 Amp		70 ns
AM49DL323BGB85IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0	260	.000005 Amp		85 ns
AM49DL324BGT70IS	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0	260	.000005 Amp		70 ns
AM49DL323BGT70IS	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0	260	.000005 Amp		70 ns
AM49DL322BGT85IS	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0	260	.000005 Amp		85 ns
AM49DL324BGT85IS	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0	260	.000005 Amp		85 ns
AM49DL323BGT85IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0	260	.000005 Amp		85 ns
AM49DL324BGB85IS	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0	260	.000005 Amp		85 ns
AM49DL324BGB70IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0	260	.000005 Amp		70 ns
AM49DL322BGB85IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0	260	.000005 Amp		85 ns
AM49DL322BGT70IS	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0	260	.000005 Amp		70 ns
AM49DL322BGT85IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0	260	.000005 Amp		85 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.