DIP Other Function Memory ICs 357

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Interleaved Burst Length Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

7230

Intel

MEMORY CIRCUIT

22

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

IN-LINE

2.54 mm

DUAL

R-PDIP-T22

5.08 mm

10.16 mm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

27.3685 mm

47L16-E/P

Microchip Technology

MEMORY CIRCUIT

AUTOMOTIVE

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SYNCHRONOUS

2048 words

EEPROM+SRAM

8

IN-LINE

DIP8,.3

2.54 mm

125 Cel

2KX8

2K

-40 Cel

MATTE TIN

DUAL

1

R-PDIP-T8

3.6 V

5.334 mm

7.62 mm

16384 bit

2.7 V

e3

9.271 mm

400 ns

47L16-I/P

Microchip Technology

MEMORY CIRCUIT

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SYNCHRONOUS

2048 words

EEPROM+SRAM

8

IN-LINE

DIP8,.3

2.54 mm

85 Cel

2KX8

2K

-40 Cel

MATTE TIN

DUAL

1

R-PDIP-T8

3.6 V

5.334 mm

7.62 mm

16384 bit

2.7 V

e3

9.271 mm

400 ns

XC17S30PD8I

Xilinx

MEMORY CIRCUIT

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SYNCHRONOUS

10 mA

247968 words

COMMON

5

5

1

IN-LINE

DIP8,.3

OTP ROMs

2.54 mm

85 Cel

3-STATE

247968X1

247968

-40 Cel

Tin/Lead (Sn85Pb15)

DUAL

R-PDIP-T8

1

5.5 V

4.5974 mm

10 MHz

7.62 mm

Not Qualified

247968 bit

4.5 V

e0

30

225

.00005 Amp

9.3599 mm

D2758

Intel

OTP ROM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

1024 words

COMMON

8

IN-LINE

DIP24,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

1KX8

1K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T24

Not Qualified

8192 bit

e0

450 ns

DS1213D

Maxim Integrated

MEMORY CIRCUIT

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

IN-LINE

2.54 mm

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T28

11.94 mm

15.24 mm

Not Qualified

e0

20

240

40.64 mm

DS1213B

Maxim Integrated

MEMORY CIRCUIT

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

IN-LINE

2.54 mm

70 Cel

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

1

11.94 mm

15.24 mm

Not Qualified

e0

35.56 mm

XC17S150XLPD8C

Xilinx

MEMORY CIRCUIT

COMMERCIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SYNCHRONOUS

5 mA

1040128 words

COMMON

3.3

3.3

1

IN-LINE

DIP8,.3

OTP ROMs

2.54 mm

70 Cel

3-STATE

1040128X1

1040128

0 Cel

TIN LEAD

DUAL

R-PDIP-T8

1

3.6 V

4.5974 mm

10 MHz

7.62 mm

Not Qualified

1040128 bit

3 V

e0

30

225

.00005 Amp

9.3599 mm

XC17S40PD8I

Xilinx

MEMORY CIRCUIT

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SYNCHRONOUS

10 mA

329312 words

COMMON

5

5

1

IN-LINE

DIP8,.3

OTP ROMs

2.54 mm

85 Cel

3-STATE

329312X1

329312

-40 Cel

Tin/Lead (Sn85Pb15)

DUAL

R-PDIP-T8

1

5.5 V

4.5974 mm

10 MHz

7.62 mm

Not Qualified

329312 bit

4.5 V

e0

30

225

.00005 Amp

9.3599 mm

XC17S20PD8C

Xilinx

MEMORY CIRCUIT

COMMERCIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SYNCHRONOUS

10 mA

178144 words

COMMON

5

5

1

IN-LINE

DIP8,.3

OTP ROMs

2.54 mm

70 Cel

3-STATE

178144X1

178144

0 Cel

Tin/Lead (Sn85Pb15)

DUAL

R-PDIP-T8

1

5.25 V

4.5974 mm

10 MHz

7.62 mm

Not Qualified

178144 bit

4.75 V

e0

30

225

.00005 Amp

9.3599 mm

MCM6674L

Motorola

COMMERCIAL

18

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

IN-LINE

DIP18,.3

Other Memory ICs

2.54 mm

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T18

Not Qualified

e0

C1702A

Intel

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

256 words

COMMON

8

IN-LINE

DIP24,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

256X8

256

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T24

Not Qualified

2048 bit

e0

1000 ns

MM5262N

National Semiconductor

COMMERCIAL

22

DIP

32

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

2048 words

SEPARATE

1

IN-LINE

DIP22,.4

Other Memory ICs

2.54 mm

70 Cel

2KX1

2K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T22

Not Qualified

2048 bit

e0

MR45V200BRAZAARL

Lapis Semiconductor

MEMORY CIRCUIT

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SYNCHRONOUS

262144 words

3.3

8

IN-LINE

2.54 mm

85 Cel

256KX8

256K

-40 Cel

DUAL

R-PDIP-T8

3.6 V

7.62 mm

2097152 bit

2.7 V

9.2 mm

P1103

Intel

COMMERCIAL

18

DIP

32

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

1024 words

SEPARATE

1

IN-LINE

DIP18,.3

Other Memory ICs

2.54 mm

70 Cel

1KX1

1K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T18

Not Qualified

1024 bit

e0

300 ns

XC17S10XLPD8C

Xilinx

MEMORY CIRCUIT

COMMERCIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SYNCHRONOUS

5 mA

95752 words

COMMON

3.3

3.3

1

IN-LINE

DIP8,.3

OTP ROMs

2.54 mm

70 Cel

3-STATE

95752X1

95752

0 Cel

TIN LEAD

DUAL

R-PDIP-T8

1

3.6 V

4.5974 mm

10 MHz

7.62 mm

Not Qualified

95752 bit

3 V

e0

30

225

.00005 Amp

9.3599 mm

XC17S30XLPD8I

Xilinx

MEMORY CIRCUIT

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SYNCHRONOUS

5 mA

249168 words

COMMON

3.3

3.3

1

IN-LINE

DIP8,.3

OTP ROMs

2.54 mm

85 Cel

3-STATE

249168X1

249168

-40 Cel

TIN LEAD

DUAL

R-PDIP-T8

1

3.6 V

4.5974 mm

10 MHz

7.62 mm

Not Qualified

249168 bit

3 V

e0

30

225

.00005 Amp

9.3599 mm

TMS2564-50JDL

Texas Instruments

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

8192 words

COMMON

8

IN-LINE

DIP28,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

DUAL

R-XDIP-T28

Not Qualified

65536 bit

500 ns

SN74170NP1

Texas Instruments

COMMERCIAL

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

TTL

THROUGH-HOLE

5

5

IN-LINE

DIP16,.3

Other Memory ICs

2.54 mm

70 Cel

0 Cel

DUAL

R-PDIP-T16

Not Qualified

TMS2150-5JDL

Texas Instruments

MEMORY CIRCUIT

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

145 mA

512 words

5

5

9

IN-LINE

DIP24,.3

SRAMs

2.54 mm

70 Cel

512X9

512

0 Cel

DUAL

R-XDIP-T24

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

.145 Amp

55 ns

TMS2400JC

Texas Instruments

OTHER

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

IN-LINE

DIP28,.6

Other Memory ICs

2.54 mm

85 Cel

-25 Cel

DUAL

R-XDIP-T28

Not Qualified

SN74S262NP3

Texas Instruments

MEMORY CIRCUIT

COMMERCIAL

20

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

TTL

THROUGH-HOLE

IN-LINE

DIP20,.3

Other Memory ICs

2.54 mm

70 Cel

0 Cel

DUAL

R-PDIP-T20

NOT SPECIFIED

NOT SPECIFIED

TMS4C1050-6N

Texas Instruments

MEMORY CIRCUIT

COMMERCIAL

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

35 mA

5

5

IN-LINE

DIP16,.3

Other Memory ICs

2.54 mm

70 Cel

0 Cel

DUAL

R-PDIP-T16

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

.005 Amp

50 ns

SN74170N1

Texas Instruments

COMMERCIAL

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

TTL

THROUGH-HOLE

5

5

IN-LINE

DIP16,.3

Other Memory ICs

2.54 mm

70 Cel

0 Cel

DUAL

R-PDIP-T16

Not Qualified

SN74ALS871N3

Texas Instruments

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

TTL

THROUGH-HOLE

IN-LINE

DIP24,.6

Other Memory ICs

2.54 mm

70 Cel

0 Cel

DUAL

R-PDIP-T24

TMS4C1050-4N

Texas Instruments

MEMORY CIRCUIT

COMMERCIAL

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

45 mA

5

5

IN-LINE

DIP16,.3

Other Memory ICs

2.54 mm

70 Cel

0 Cel

DUAL

R-PDIP-T16

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

.005 Amp

30 ns

SN74AS871NP3

Texas Instruments

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

TTL

THROUGH-HOLE

IN-LINE

DIP28,.6

Other Memory ICs

2.54 mm

70 Cel

0 Cel

DUAL

R-PDIP-T28

SN74HC670J

Texas Instruments

INDUSTRIAL

16

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

2/6

IN-LINE

DIP16,.3

Other Memory ICs

2.54 mm

85 Cel

-40 Cel

DUAL

R-XDIP-T16

Not Qualified

TMS2501NC

Texas Instruments

MEMORY CIRCUIT

OTHER

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

IN-LINE

DIP24,.6

Other Memory ICs

2.54 mm

85 Cel

-25 Cel

DUAL

R-PDIP-T24

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SN74S262NP1

Texas Instruments

MEMORY CIRCUIT

COMMERCIAL

20

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

TTL

THROUGH-HOLE

IN-LINE

DIP20,.3

Other Memory ICs

2.54 mm

70 Cel

0 Cel

DUAL

R-PDIP-T20

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TMS2564-35JL

Texas Instruments

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

8192 words

COMMON

8

IN-LINE

DIP28,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

DUAL

R-XDIP-T28

Not Qualified

65536 bit

350 ns

SN74LS170N3

Texas Instruments

COMMERCIAL

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

TTL

THROUGH-HOLE

5

5

IN-LINE

DIP16,.3

Other Memory ICs

2.54 mm

70 Cel

0 Cel

DUAL

R-PDIP-T16

SN74S262N3

Texas Instruments

MEMORY CIRCUIT

COMMERCIAL

20

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

TTL

THROUGH-HOLE

IN-LINE

DIP20,.3

Other Memory ICs

2.54 mm

70 Cel

0 Cel

DUAL

R-PDIP-T20

NOT SPECIFIED

NOT SPECIFIED

NMC27C16Q-55

Texas Instruments

OTP ROM

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T24

Not Qualified

16384 bit

e0

550 ns

SN74AS871NP1

Texas Instruments

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

TTL

THROUGH-HOLE

IN-LINE

DIP28,.6

Other Memory ICs

2.54 mm

70 Cel

0 Cel

DUAL

R-PDIP-T28

Not Qualified

SNC54170J

Texas Instruments

MILITARY

16

DIP

RECTANGULAR

CERAMIC

NO

TTL

MIL-STD-883 Class B (Modified)

THROUGH-HOLE

5

5

IN-LINE

DIP16,.3

Other Memory ICs

2.54 mm

125 Cel

-55 Cel

DUAL

R-XDIP-T16

Not Qualified

TMS2508-25JL

Texas Instruments

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

1024 words

COMMON

8

IN-LINE

DIP24,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

1KX8

1K

0 Cel

DUAL

R-XDIP-T24

Not Qualified

8192 bit

250 ns

TMS2758JDL-0

Texas Instruments

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

1024 words

COMMON

8

IN-LINE

DIP24,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

1KX8

1K

0 Cel

DUAL

R-XDIP-T24

Not Qualified

8192 bit

450 ns

SMJ27L08-45JM

Texas Instruments

OTP ROM

MILITARY

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

38535Q/M;38534H;883B

THROUGH-HOLE

1024 words

8

IN-LINE

DIP24,.6

Other Memory ICs

2.54 mm

125 Cel

3-STATE

1KX8

1K

-55 Cel

DUAL

R-XDIP-T24

Not Qualified

8192 bit

450 ns

SN74AS870JT4

Texas Instruments

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

TTL

THROUGH-HOLE

IN-LINE

DIP24,.3

Other Memory ICs

2.54 mm

70 Cel

0 Cel

DUAL

R-XDIP-T24

SN74170JP4

Texas Instruments

COMMERCIAL

16

DIP

RECTANGULAR

CERAMIC

NO

TTL

THROUGH-HOLE

5

5

IN-LINE

DIP16,.3

Other Memory ICs

2.54 mm

70 Cel

0 Cel

DUAL

R-XDIP-T16

TMS2716-30JDL

Texas Instruments

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

2048 words

8

IN-LINE

DIP24,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

DUAL

R-XDIP-T24

Not Qualified

16384 bit

300 ns

SN74ACT2151-25JD

Texas Instruments

MEMORY CIRCUIT

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

1024 words

5

5

12

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

1KX12

1K

0 Cel

DUAL

R-XDIP-T28

Not Qualified

12288 bit

NOT SPECIFIED

NOT SPECIFIED

25 ns

TMS2716JL

Texas Instruments

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

2048 words

8

IN-LINE

DIP24,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

2KX8

2K

0 Cel

DUAL

R-XDIP-T24

Not Qualified

16384 bit

NOT SPECIFIED

NOT SPECIFIED

450 ns

SNC54AS871JD

Texas Instruments

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

TTL

MIL-STD-883 Class B (Modified)

THROUGH-HOLE

IN-LINE

DIP28,.6

Other Memory ICs

2.54 mm

125 Cel

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

TMS2501JC

Texas Instruments

MEMORY CIRCUIT

OTHER

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

IN-LINE

DIP24,.6

Other Memory ICs

2.54 mm

85 Cel

-25 Cel

DUAL

R-XDIP-T24

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SN74170J4

Texas Instruments

COMMERCIAL

16

DIP

RECTANGULAR

CERAMIC

NO

TTL

THROUGH-HOLE

5

5

IN-LINE

DIP16,.3

Other Memory ICs

2.54 mm

70 Cel

0 Cel

DUAL

R-XDIP-T16

TMS2564-45JDL

Texas Instruments

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

8192 words

COMMON

8

IN-LINE

DIP28,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

DUAL

R-XDIP-T28

Not Qualified

65536 bit

450 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.