DIP Other Function Memory ICs 357

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TMS2150-45NT	Texas Instruments	MEMORY CIRCUIT	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE			135 mA	512 words		5	5	9	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		512X9	512	0 Cel		DUAL	R-PDIP-T24					Not Qualified				NOT SPECIFIED	NOT SPECIFIED	.135 Amp		45 ns
SN74ALS870NTP3	Texas Instruments		COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE									IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	70 Cel				0 Cel		DUAL	R-PDIP-T24
TMS27L08JL	Texas Instruments	OTP ROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				1024 words				8	IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	1KX8	1K	0 Cel		DUAL	R-XDIP-T24					Not Qualified	8192 bit							450 ns
TMS4C1070-30N	Texas Instruments	MEMORY CIRCUIT	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			50 mA			5	5		IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel				0 Cel		DUAL	R-PDIP-T18					Not Qualified				NOT SPECIFIED	NOT SPECIFIED	.01 Amp		25 ns
TACT2151-25N	Texas Instruments	MEMORY CIRCUIT	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE				1024 words				11	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		1KX11	1K	0 Cel		DUAL	R-PDIP-T28					Not Qualified	11264 bit			NOT SPECIFIED	NOT SPECIFIED			25 ns
TACT2154-25N3	Texas Instruments	MEMORY CIRCUIT	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			125 mA	2048 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K	0 Cel		DUAL	R-PDIP-T28						16384 bit			NOT SPECIFIED	NOT SPECIFIED	.105 Amp		25 ns
TMS2716-45JL	Texas Instruments		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				2048 words				8	IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel		DUAL	R-XDIP-T24					Not Qualified	16384 bit			NOT SPECIFIED	NOT SPECIFIED			450 ns
SN74LS170N1	Texas Instruments		COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE						5	5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	70 Cel				0 Cel		DUAL	R-PDIP-T16					Not Qualified
SN74AS871N1	Texas Instruments		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE									IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	70 Cel				0 Cel		DUAL	R-PDIP-T28					Not Qualified
SMJ2708-35JM	Texas Instruments	OTP ROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE				1024 words				8	IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	125 Cel	3-STATE	1KX8	1K	-55 Cel		DUAL	R-XDIP-T24					Not Qualified	8192 bit							350 ns
TMS2758JDL-1	Texas Instruments		COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				1024 words	COMMON			8	IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	1KX8	1K	0 Cel		DUAL	R-XDIP-T24					Not Qualified	8192 bit							450 ns
SN74S262N	Texas Instruments	MEMORY CIRCUIT	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE									IN-LINE	DIP20,.3	Other Memory ICs	2.54 mm	70 Cel				0 Cel		DUAL	R-PDIP-T20					Not Qualified				NOT SPECIFIED	NOT SPECIFIED
SN54LS189J	Texas Instruments	MEMORY CIRCUIT	MILITARY	16	DIP	RECTANGULAR		NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		4	IN-LINE		SRAMs		125 Cel	3-STATE	16X4	16	-55 Cel		DUAL	R-XDIP-T16		5.5 V			Not Qualified	64 bit	4.5 V						90 ns
TACT2152-25N	Texas Instruments	MEMORY CIRCUIT	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE				2048 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		2KX8	2K	0 Cel		DUAL	R-PDIP-T28					Not Qualified	16384 bit			NOT SPECIFIED	NOT SPECIFIED			25 ns
DS1652	Analog Devices	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE						5	5		IN-LINE	DIP8,.3	Other Memory ICs	2.54 mm	70 Cel				0 Cel	TIN LEAD	DUAL	R-PDIP-T8					Not Qualified			e0
DS1651	Analog Devices	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE						5	5		IN-LINE	DIP8,.3	Other Memory ICs	2.54 mm	70 Cel				0 Cel	TIN LEAD	DUAL	R-PDIP-T8					Not Qualified			e0
DS1653	Analog Devices	MEMORY CIRCUIT	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE						5	5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	70 Cel				0 Cel	TIN LEAD	DUAL	R-PDIP-T16					Not Qualified			e0
DS1652B	Analog Devices	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE						5	5		IN-LINE	DIP8,.3	Other Memory ICs	2.54 mm	70 Cel				0 Cel	TIN LEAD	DUAL	R-PDIP-T8					Not Qualified			e0
MK48H74P-35	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			125 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD	DUAL	R-XDIP-T28					Not Qualified	65536 bit		e0			.125 Amp		35 ns
Z8038D2N	STMicroelectronics	MEMORY CIRCUIT	MILITARY	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE		ASYNCHRONOUS	250 mA	128 words		5	5	8	IN-LINE	DIP40,.6	FIFOs	2.54 mm	125 Cel		128X8	128	-55 Cel	TIN LEAD	DUAL	R-CDIP-T40		5.25 V	4 MHz	15.24 mm	Not Qualified	1024 bit	4.75 V	e0
Z8038B6V	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		ASYNCHRONOUS	250 mA	128 words		5	5	8	IN-LINE	DIP40,.6	FIFOs	2.54 mm	85 Cel		128X8	128	-40 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.25 V	4 MHz	15.24 mm	Not Qualified	1024 bit	4.75 V	e0				52.18 mm
MK48H74P-55	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			125 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD	DUAL	R-XDIP-T28					Not Qualified	65536 bit		e0			.125 Amp		55 ns
MK48H74N-45	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			125 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28					Not Qualified	65536 bit		e0			.125 Amp		45 ns
MK48H74P-45	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			125 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD	DUAL	R-XDIP-T28					Not Qualified	65536 bit		e0			.125 Amp		45 ns
Z8038AB1V	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		ASYNCHRONOUS	250 mA	128 words		5	5	8	IN-LINE	DIP40,.6	FIFOs	2.54 mm	70 Cel		128X8	128	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.25 V	6 MHz	15.24 mm	Not Qualified	1024 bit	4.75 V	e0				52.18 mm
Z8038D1N	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE		ASYNCHRONOUS	250 mA	128 words		5	5	8	IN-LINE	DIP40,.6	FIFOs	2.54 mm	70 Cel		128X8	128	0 Cel	TIN LEAD	DUAL	R-CDIP-T40		5.25 V	4 MHz	15.24 mm	Not Qualified	1024 bit	4.75 V	e0
HCC40208BD	STMicroelectronics		MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE							3/18		IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	125 Cel				-55 Cel		DUAL	R-XDIP-T24					Not Qualified
M46Z256Y-85PL1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			200 mA	262144 words		5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40					Not Qualified	4194304 bit		e0			.005 Amp		85 ns
M46Z256-85PL1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			200 mA	262144 words		5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40					Not Qualified	4194304 bit		e0			.005 Amp		85 ns
MK41S80P15	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			120 mA	4096 words		5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		4KX4	4K	0 Cel	TIN LEAD	DUAL	R-XDIP-T22					Not Qualified	16384 bit		e0			.12 Amp		15 ns
MK48H74N-55	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			125 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28					Not Qualified	65536 bit		e0			.125 Amp		55 ns
MK48H74N-35	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			125 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28					Not Qualified	65536 bit		e0			.125 Amp		35 ns
HCF40108BE	STMicroelectronics		INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE							3/15		IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	85 Cel				-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24					Not Qualified			e0
Z8038AD6N	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE		ASYNCHRONOUS	250 mA	128 words		5	5	8	IN-LINE	DIP40,.6	FIFOs	2.54 mm	85 Cel		128X8	128	-40 Cel	TIN LEAD	DUAL	R-CDIP-T40		5.25 V	6 MHz	15.24 mm	Not Qualified	1024 bit	4.75 V	e0
T54LS670D2	STMicroelectronics		MILITARY	16	DIP	RECTANGULAR	CERAMIC	NO		TTL		THROUGH-HOLE						5	5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel				-55 Cel		DUAL	R-XDIP-T16					Not Qualified
M46Z256-120PL1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			200 mA	262144 words		5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40					Not Qualified	4194304 bit		e0			.005 Amp		120 ns
HCF40208BE	STMicroelectronics		INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE									IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	85 Cel				-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24					Not Qualified			e0
HCC40108BD	STMicroelectronics		MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE							3/18		IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	125 Cel				-55 Cel		DUAL	R-XDIP-T24					Not Qualified
Z8038AD2N	STMicroelectronics	MEMORY CIRCUIT	MILITARY	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE		ASYNCHRONOUS	250 mA	128 words		5	5	8	IN-LINE	DIP40,.6	FIFOs	2.54 mm	125 Cel		128X8	128	-55 Cel	TIN LEAD	DUAL	R-CDIP-T40		5.25 V	6 MHz	15.24 mm	Not Qualified	1024 bit	4.75 V	e0
Z8038AD1N	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE		ASYNCHRONOUS	250 mA	128 words		5	5	8	IN-LINE	DIP40,.6	FIFOs	2.54 mm	70 Cel		128X8	128	0 Cel	TIN LEAD	DUAL	R-CDIP-T40		5.25 V	6 MHz	15.24 mm	Not Qualified	1024 bit	4.75 V	e0
MK41S80P12	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			120 mA	4096 words		5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		4KX4	4K	0 Cel	TIN LEAD	DUAL	R-XDIP-T22					Not Qualified	16384 bit		e0			.12 Amp		12 ns
Z8038AB6V	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		ASYNCHRONOUS	250 mA	128 words		5	5	8	IN-LINE	DIP40,.6	FIFOs	2.54 mm	85 Cel		128X8	128	-40 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.25 V	6 MHz	15.24 mm	Not Qualified	1024 bit	4.75 V	e0				52.18 mm
HCF40108BF	STMicroelectronics		INDUSTRIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE							3/15		IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	85 Cel				-40 Cel		DUAL	R-XDIP-T24					Not Qualified
Z8038B1V	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		ASYNCHRONOUS	250 mA	128 words		5	5	8	IN-LINE	DIP40,.6	FIFOs	2.54 mm	70 Cel		128X8	128	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.25 V	4 MHz	15.24 mm	Not Qualified	1024 bit	4.75 V	e0				52.18 mm
M46Z256Y-120PL1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			200 mA	262144 words		5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40					Not Qualified	4194304 bit		e0			.005 Amp		120 ns
Z8038D6N	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE		ASYNCHRONOUS	250 mA	128 words		5	5	8	IN-LINE	DIP40,.6	FIFOs	2.54 mm	85 Cel		128X8	128	-40 Cel	TIN LEAD	DUAL	R-CDIP-T40		5.25 V	4 MHz	15.24 mm	Not Qualified	1024 bit	4.75 V	e0
HCF40208BF	STMicroelectronics		INDUSTRIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE							3/15		IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	85 Cel				-40 Cel		DUAL	R-XDIP-T24					Not Qualified
FM25V10-PG	Infineon Technologies		INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		131072 words				8					85 Cel		128KX8	128K	-40 Cel	PURE TIN	DUAL	R-PDIP-T8	1	3.6 V				1048576 bit	2 V			260

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.