DIP Other Function Memory ICs 357

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
XC17S05XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	54544X1	54544		0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	54544 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S05PDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		53984 words		5		1	IN-LINE			2.54 mm	85 Cel		53984X1	53984		-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm		7.62 mm	Not Qualified	53984 bit	4.5 V	e3	30	250		9.3599 mm
TC528126AP-12	Toshiba	VIDEO DRAM	COMMERCIAL	40	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			45 mA	131072 words		5	5	8	IN-LINE	DIP40,.6	Other Memory ICs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T40						Not Qualified	1048576 bit		e0			.01 Amp		120 ns
TC51832ASPL-85	Toshiba		COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			55 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	Other Memory ICs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						Not Qualified	262144 bit		e0			.0001 Amp		85 ns
TC528128AP-10	Toshiba	VIDEO DRAM	COMMERCIAL	40	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			50 mA	131072 words		5	5	8	IN-LINE	DIP40,.6	Other Memory ICs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T40						Not Qualified	1048576 bit		e0			.01 Amp		100 ns
TC51832APL-10	Toshiba		COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			45 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						Not Qualified	262144 bit		e0			.0001 Amp		100 ns
TC528128AP-12	Toshiba	VIDEO DRAM	COMMERCIAL	40	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			45 mA	131072 words		5	5	8	IN-LINE	DIP40,.6	Other Memory ICs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T40						Not Qualified	1048576 bit		e0			.01 Amp		120 ns
TC518129APL-80	Toshiba		COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			70 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32						Not Qualified	1048576 bit		e0			.0002 Amp		80 ns
TC51832APL-85	Toshiba		COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			55 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						Not Qualified	262144 bit		e0			.0001 Amp		85 ns
TC518129APL-10	Toshiba		COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			60 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32						Not Qualified	1048576 bit		e0			.0002 Amp		100 ns
TC74HC670AP(F)	Toshiba		INDUSTRIAL	16	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE							2/6		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	85 Cel					-40 Cel		DUAL	R-PDIP-T16						Not Qualified
TC528126AP-10	Toshiba	VIDEO DRAM	COMMERCIAL	40	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			50 mA	131072 words		5	5	8	IN-LINE	DIP40,.6	Other Memory ICs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T40						Not Qualified	1048576 bit		e0			.01 Amp		100 ns
TC518129APL-80LV	Toshiba		COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			20 mA	131072 words	COMMON	3.3	3.3	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32						Not Qualified	1048576 bit		e0			.0001 Amp		80 ns
TC51832ASPL-10	Toshiba		COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			45 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	Other Memory ICs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						Not Qualified	262144 bit		e0			.0001 Amp		100 ns
TC74HC670P	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	16	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		ASYNCHRONOUS		4 words				4	IN-LINE			2.54 mm	85 Cel		4X4	4		-40 Cel	TIN LEAD	DUAL	R-PDIP-T16		6 V	5 mm		7.62 mm	Not Qualified	16 bit	2 V	e0				19.304 mm
UPD411AC-2	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE				4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22						Not Qualified	4096 bit		e0					200 ns
UPD41102C-2	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			90 mA			5	5		IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24						Not Qualified			e0			.09 Amp		21 ns
UPD411C-E	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE				4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22						Not Qualified	4096 bit		e0					350 ns
UPD42832C-15	Renesas Electronics		COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			40 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						Not Qualified	262144 bit		e0			.0005 Amp		150 ns
CD40208BE98	Renesas Electronics		INDUSTRIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE									IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24						Not Qualified			e0
UPD42832C-12L	Renesas Electronics		COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			50 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						Not Qualified	262144 bit		e0			.0001 Amp		120 ns
UPD4168C-12	Renesas Electronics		COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE			65 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						Not Qualified	65536 bit		e0					120 ns
UPD42505C-50H	Renesas Electronics		COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			60 mA			5	5		IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24						Not Qualified			e0			.06 Amp		40 ns
UPD42270C-60	Renesas Electronics		COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO				THROUGH-HOLE			80 mA						IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						Not Qualified			e0					40 ns
UPD411C-4	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE				4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22						Not Qualified	4096 bit		e0					135 ns
UPD411D-4	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE				4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22						Not Qualified	4096 bit		e0					135 ns
UPD42832C-12	Renesas Electronics		COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			50 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						Not Qualified	262144 bit		e0			.0005 Amp		120 ns
UPD411D-1	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22						Not Qualified	4096 bit		e0					250 ns
UPD42102C-5	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA			5	5		IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24						Not Qualified			e0			.08 Amp		18 ns
UPD4168C-25	Renesas Electronics		COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE			55 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						Not Qualified	65536 bit		e0					250 ns
UPD42832C-10	Renesas Electronics		COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			60 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						Not Qualified	262144 bit		e0			.001 Amp		100 ns
CD40208BEX98	Renesas Electronics		INDUSTRIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE									IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24									e0
UPD411D	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22						Not Qualified	4096 bit		e0					300 ns
UPD42832C-15L	Renesas Electronics		COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			40 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						Not Qualified	262144 bit		e0			.0001 Amp		150 ns
UPD4168C-15	Renesas Electronics		COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE			60 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						Not Qualified	65536 bit		e0					150 ns
UPD42101C-1	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			35 mA				+-5,12		IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24						Not Qualified			e0			.035 Amp		49 ns
UPD41221C-70	Renesas Electronics		COMMERCIAL	14	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE									IN-LINE	DIP14,.3	Other Memory ICs	2.54 mm	55 Cel					0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T14						Not Qualified			e0
M66305AP	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		5120 words		5		1	IN-LINE			2.54 mm	70 Cel		5KX1	5K		-10 Cel		DUAL	R-PDIP-T20		5.5 V	4.5 mm		7.62 mm	Not Qualified	5120 bit	4.5 V					24 mm
UPD411C-2	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE				4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22						Not Qualified	4096 bit		e0					200 ns
UPD41264C-12	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE				65536 words		5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel		64KX4	64K		0 Cel	TIN LEAD	DUAL	R-PDIP-T24						Not Qualified	262144 bit		e0					120 ns
HN482732AG-30	Renesas Electronics		COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE				70 Cel		4KX8	4K		0 Cel	TIN LEAD	DUAL	R-PDIP-T24		5.5 V					32768 bit	4.5 V	e0					300 ns
5962-01-323-4006	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE				65536 words		5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel		64KX4	64K		0 Cel		DUAL	R-PDIP-T24						Not Qualified	262144 bit							120 ns
UPD4168C-20	Renesas Electronics		COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE			55 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						Not Qualified	65536 bit		e0					200 ns
UPD411D-2	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22						Not Qualified	4096 bit		e0					200 ns
IM6653MJG/HR	Renesas Electronics	OTP ROM	MILITARY	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE			6 mA	1024 words	COMMON			4	IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	125 Cel	3-STATE	1KX4	1K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24						Not Qualified	4096 bit		e0			.00004 Amp		600 ns
UPD41102C-1S	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			90 mA			5	5		IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24						Not Qualified			e0			.09 Amp		27 ns
UPD42505C-75H	Renesas Electronics		COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			60 mA			5	5		IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24						Not Qualified			e0			.06 Amp		55 ns
UPD41101C-3	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			90 mA				+-5,12		IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24						Not Qualified			e0			.09 Amp		27 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.