DIP Other Function Memory ICs 357

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
UPD41221C-90	Renesas Electronics		COMMERCIAL	14	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE								IN-LINE	DIP14,.3	Other Memory ICs	2.54 mm	55 Cel					0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T14				Not Qualified				e0
UPD42102C-3	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		80 mA			5	5		IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified				e0	.08 Amp		21 ns
UPD42101G-2	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		60 mA				+-5,12		IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified				e0	.06 Amp		27 ns
UPD411AC-1	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE			4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	4096 bit			e0			250 ns
UPD42101G-3	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		70 mA				+-5,12		IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified				e0	.07 Amp		27 ns
UPD41102C-3	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		90 mA			5	5		IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified				e0	.09 Amp		21 ns
UPD411D-3	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22				Not Qualified	4096 bit			e0			150 ns
UPD411AC	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE			4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	4096 bit			e0			300 ns
UPD42101G-1	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		35 mA				+-5,12		IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified				e0	.035 Amp		49 ns
UPD42101C-2	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		60 mA				+-5,12		IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified				e0	.06 Amp		27 ns
UPD42102C-1	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		40 mA			5	5		IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified				e0	.04 Amp		40 ns
UPD41101C-2	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		90 mA				+-5,12		IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified				e0	.09 Amp		27 ns
UPD42101C-3	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		70 mA				+-5,12		IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified				e0	.07 Amp		27 ns
UPD41102C-1	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		90 mA			5	5		IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified				e0	.09 Amp		40 ns
UPD42102C-2	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		70 mA			5	5		IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified				e0	.07 Amp		21 ns
UPD411C-3	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE			4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	4096 bit			e0			150 ns
UPD41264C-15	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE			65536 words		5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel		64KX4	64K		0 Cel	TIN LEAD	DUAL	R-PDIP-T24				Not Qualified	262144 bit			e0			150 ns
UPD42505C-75	Renesas Electronics		COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		60 mA			5	5		IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified				e0	.06 Amp		55 ns
CD40108BE98	Renesas Electronics		INDUSTRIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE						5/15		IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified				e0
UPD411D-E	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22				Not Qualified	4096 bit			e0			350 ns
UPD41221C	Renesas Electronics		COMMERCIAL	14	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE								IN-LINE	DIP14,.3	Other Memory ICs	2.54 mm	55 Cel					0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T14				Not Qualified				e0
UPD42264C-10	Renesas Electronics	VIDEO DRAM	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		125 mA	65536 words		5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel		64KX4	64K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified	262144 bit			e0	.005 Amp		100 ns
IM6653AMJG/HR	Renesas Electronics	OTP ROM	MILITARY	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		12 mA	1024 words	COMMON			4	IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	125 Cel	3-STATE	1KX4	1K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24				Not Qualified	4096 bit			e0	.00004 Amp		350 ns
UPD411A-EC	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22				Not Qualified	4096 bit			e0			350 ns
CD40108BEX98	Renesas Electronics		MILITARY	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE						5/15		IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	125 Cel					-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24								e0
UPD42505C-50	Renesas Electronics		COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		60 mA			5	5		IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified				e0	.06 Amp		40 ns
UPD411C-1	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE			4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	4096 bit			e0			250 ns
UPD41101C-1	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		90 mA				+-5,12		IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified				e0	.09 Amp		49 ns
UPD411C	Renesas Electronics		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE			4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T22				Not Qualified	4096 bit			e0			300 ns
KS54AHCT670J	Samsung		MILITARY	16	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE					5	5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel					-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16				Not Qualified				e0
KS74HCTLS670J	Samsung		INDUSTRIAL	16	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE					5	5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16				Not Qualified				e0
KS74AHCT670N	Samsung		INDUSTRIAL	16	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE					5	5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16				Not Qualified				e0
KM424C256P-10	Samsung	VIDEO DRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		105 mA	262144 words		5	5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	70 Cel		256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				Not Qualified	1048576 bit			e0	.005 Amp		100 ns
KS74HCTLS670N	Samsung		INDUSTRIAL	16	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE					5	5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16				Not Qualified				e0
KM424C256P-12	Samsung	VIDEO DRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		95 mA	262144 words		5	5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	70 Cel		256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				Not Qualified	1048576 bit			e0	.005 Amp		120 ns
KM658128SP-8	Samsung		COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			131072 words	COMMON	5	5	8	IN-LINE	DIP32(UNSPEC)	Other Memory ICs		70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32				Not Qualified	1048576 bit			e0			80 ns
KM658128SP-10	Samsung		COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			131072 words	COMMON	5	5	8	IN-LINE	DIP32(UNSPEC)	Other Memory ICs		70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32				Not Qualified	1048576 bit			e0			100 ns
KS54HCTLS670J	Samsung		MILITARY	16	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE					5	5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel					-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16				Not Qualified				e0
KS74AHCT670J	Samsung		INDUSTRIAL	16	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE					5	5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16				Not Qualified				e0
KM658128SP-12	Samsung		COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			131072 words	COMMON	5	5	8	IN-LINE	DIP32(UNSPEC)	Other Memory ICs		70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32				Not Qualified	1048576 bit			e0			120 ns
KM424C256P-8	Samsung	VIDEO DRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			262144 words		5	5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	70 Cel		256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				Not Qualified	1048576 bit			e0			80 ns
EPC1213DM883B8	Altera	MEMORY CIRCUIT	MILITARY	8	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS		212992 words		5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	208KX1	208K		-55 Cel		DUAL	R-GDIP-T8	5.5 V	5.08 mm	7.62 mm	Not Qualified	212992 bit	4.5 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES			9.65 mm
MT42C8128W-15	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	40	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			131072 words		5	5	8	IN-LINE	DIP40,.6	Other Memory ICs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T40				Not Qualified	1048576 bit			e0	.001 Amp		150 ns
5962-01-383-1652	Micron Technology	MEMORY CIRCUIT	MILITARY	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		90 mA	65536 words		5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	125 Cel		64KX4	64K		-55 Cel		DUAL	R-XDIP-T24				Not Qualified	262144 bit				.006 Amp		120 ns
MT42C4065-12	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		60 mA	65536 words		5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel		64KX4	64K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified	262144 bit			e0	.002 Amp		120 ns
MT42C4064-15	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		60 mA	65536 words		5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel		64KX4	64K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified	262144 bit			e0	.004 Amp		150 ns
MT42C4064C-15	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE		60 mA	65536 words		5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel		64KX4	64K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24				Not Qualified	262144 bit			e0	.004 Amp		150 ns
MT42C4064C-20/883C	Micron Technology	MEMORY CIRCUIT	MILITARY	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		60 mA	65536 words		5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	125 Cel		64KX4	64K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24				Not Qualified	262144 bit			e0	.006 Amp		200 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.