TFBGA Other Function Memory ICs 1,155

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Standby Current	Length	Maximum Access Time
K5A3280YTC-T7550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 1M X 8 / 512K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8		11 mm
K5A3380YBC-T7550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 1M X 8 / 512K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8		11 mm
K5A3380YTA-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM		11 mm
K5P6480YCM-T085	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX8	8M	-25 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	67108864 bit	2.7 V	IT ALSO CONTAINS 1M X 8/512K X 16 SRAM		13 mm
K5A3380YBA-T955	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM		11 mm
K5A3280YBA-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM		11 mm
K5A3380YTC-T7550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 1M X 8 / 512K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8		11 mm
K5A3340YBB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM	.00001 Amp	11 mm	80 ns
K5A3380YBA-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM		11 mm
K5A3380YBA-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM		11 mm
K5A3380YBB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM	.000015 Amp	11 mm	70 ns
K5S3216Y0M-T070	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	9 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 1M X 16 BIT FULL CMOS SRAM		12.5 mm
K5A3240YBC-T8550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8		11 mm
K5A3A41YBA-K870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B66	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM		11 mm
K5S3216Y0A-T370	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	2097152 words	2.9	PSRAM+SRAM	2.9	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	BOTTOM	R-PBGA-B69	3.1 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 1M X 16 BIT FULL CMOS SRAM	.00001 Amp	11 mm	70 ns
K5A3340YBA-T970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM		11 mm
K5A3280YBA-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM		11 mm
KBY00U00VA-B4500	Samsung	MEMORY CIRCUIT	OTHER	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B137	1.95 V	1.2 mm	10.5 mm		1073741824 bit	1.7 V	SRAM IS ORGANISED AS 64M X 32 PLUS 64M X 32		13 mm
K5A3B41YBA-K970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B66	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM		11 mm
K5A3280YTA-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM		11 mm
K5A3280YTA-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM		11 mm
K5A3340YBC-T7550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8		11 mm
K5A3240YTA-T370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM		11 mm
K5A3340YBA-T370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM		11 mm
K5A3A41YBA-K970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B66	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM		11 mm
K5A3340YTC-T8550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8		11 mm
K5C6481NBM-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	81	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B81	3.3 V	1.2 mm	10.4 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 512K X 16 BIT FULL CMOS SRAM		10.8 mm
K5A3B41YBA-K870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B66	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM		11 mm
K5A3380YTB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM	.000015 Amp	11 mm	80 ns
K5A3A41YBA-K370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B66	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM		11 mm
K5A3280YTC-T8550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 1M X 8 / 512K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8		11 mm
K5A3A41YTA-K370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B66	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM		11 mm
K5A3340YBC-T8550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8		11 mm
K5C6417YTM-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	81	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B81	3.3 V	1.2 mm	10.4 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 1M X 16 BIT FULL CMOS SRAM		10.8 mm
K5A3B41YTA-K970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B66	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM		11 mm
K5A3B41YTA-K370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B66	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM		11 mm
KA100O015E-BJTT0	Samsung	MEMORY CIRCUIT	OTHER	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B137	1.95 V	1.2 mm	10.5 mm		1073741824 bit	1.7 V	SRAM IS ORGANISED AS 64M X 32 PLUS 64M X 32		13 mm
K5A3B41YBA-K370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B66	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM		11 mm
K5A3280YBB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM	.000015 Amp	11 mm	70 ns
K5A3240YTC-T7550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8		11 mm
K5S3216Y0A-T385	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	2097152 words	2.9	PSRAM+SRAM	2.9	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	BOTTOM	R-PBGA-B69	3.1 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 1M X 16 BIT FULL CMOS SRAM	.00001 Amp	11 mm	85 ns
K5A3340YTA-T870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM		11 mm
K5T6432YBM-T310	Samsung	MEMORY CIRCUIT	OTHER	81	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	200 mA	4194304 words	3	FLASH+PSRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA81,12X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	BOTTOM	R-PBGA-B81	3.3 V	1.2 mm	10.4 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 2M X 16 BIT UTRAM	.000005 Amp	10.8 mm	100 ns
K5A3240YTA-T870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM		11 mm
K5A3380YBC-T8550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 1M X 8 / 512K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8		11 mm
K5A3A41YTA-K870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B66	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM		11 mm
K5A3240YBB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM	.00001 Amp	11 mm	70 ns
K5A3380YTA-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM		11 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.