TFBGA Other Function Memory ICs 1,155

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
S71GL128PC0HH30Y2	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B84		3.1 V	1.2 mm	8 mm	Not Qualified	134217728 bit	2.7 V						11.6 mm
S71GL064NB0BFW0Z2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 2M X 16	e1	40	260		9 mm
S71NS512RD0ZHEKL2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	6.2 mm	Not Qualified	536870912 bit	1.7 V	PSRAM IS ORGANISED AS 128 MB(8 MB X 16-BIT)					7.7 mm
S72WS01GSF0YHMJ33	Infineon Technologies	MEMORY CIRCUIT	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA186,13X17,25	Other Memory ICs	.65 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B186		1.95 V	1.2 mm	11 mm	Not Qualified	536870912 bit	1.7 V	512 MBIT SDRAM					13 mm	100 ns
S71GL128PC0HH30Y3	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B84		3.1 V	1.2 mm	8 mm	Not Qualified	134217728 bit	2.7 V						11.6 mm
S71GL064NA0BHW0U0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260		9 mm	90 ns
S75WS256PEFKFFLW3	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.65 mm	85 Cel	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B128		1.95 V	1.15 mm	12 mm	Not Qualified	268435456 bit	1.7 V		e1				12 mm
S72NS256RD0KHFL40	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm	12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16					12 mm
THGBM3G5D1FBAIE	Toshiba	MEMORY CIRCUIT	OTHER	169	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		4294967296 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	4GX8	4G	-25 Cel		BOTTOM	R-PBGA-B169		3.6 V	1.2 mm	12 mm		34359738368 bit	2.7 V						16 mm
THGBM3G4D1FBAIG	Toshiba	MEMORY CIRCUIT	OTHER	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	2GX8	2G	-25 Cel		BOTTOM	R-PBGA-B153		3.6 V	1.2 mm	11.5 mm		17179869184 bit	2.7 V						13 mm
MC-2311100F9-B80-BQ1	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	61	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	1MX16	1M	-20 Cel		BOTTOM	R-PBGA-B61		3 V	1.2 mm	7 mm	Not Qualified	16777216 bit	2.6 V	SRAM CONFIGURATION IS 256K X 16					9 mm
MC-2311100F9-B10-BQ1	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	61	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	1MX16	1M	-20 Cel		BOTTOM	R-PBGA-B61		3 V	1.2 mm	7 mm	Not Qualified	16777216 bit	2.6 V	SRAM CONFIGURATION IS 256K X 16					9 mm
MC-222262F9-B85X-BT3	Renesas Electronics	MEMORY CIRCUIT	OTHER	77	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B77		3.6 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	CONTAINS 512K X 16 BIT SRAM					12 mm
MC-2311100F9-B90-BQ1	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	61	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel	1MX16	1M	-20 Cel		BOTTOM	R-PBGA-B61		3 V	1.2 mm	7 mm	Not Qualified	16777216 bit	2.6 V	SRAM CONFIGURATION IS 256K X 16					9 mm
K5A3340YBA-T870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM					11 mm
K5A3340YTB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM				.00001 Amp	11 mm	70 ns
K5C6481NTM-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	81	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B81		3.3 V	1.2 mm	10.4 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 512K X 16 BIT FULL CMOS SRAM					10.8 mm
K5A3380YTC-T8550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 1M X 8 / 512K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8					11 mm
K5A3240YTB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM				.00001 Amp	11 mm	80 ns
K5A3340YTA-T970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM					11 mm
K5C6417YBM-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	81	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B81		3.3 V	1.2 mm	10.4 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 1M X 16 BIT FULL CMOS SRAM					10.8 mm
K5A3240YBA-T370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM					11 mm
K5A3240YBC-T7550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8					11 mm
K5A3280YTB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM				.000015 Amp	11 mm	80 ns
K5A3340YBB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM				.00001 Amp	11 mm	70 ns
K5S3216Y0M-T010	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	9 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 1M X 16 BIT FULL CMOS SRAM					12.5 mm
K5T6432YTM-T310	Samsung	MEMORY CIRCUIT	OTHER	81	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	200 mA	4194304 words	3	FLASH+PSRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA81,12X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B81		3.3 V	1.2 mm	10.4 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 2M X 16 BIT UTRAM				.000005 Amp	10.8 mm	100 ns
K5A3380YTB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM				.000015 Amp	11 mm	70 ns
K5A3B41YTA-K870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM					11 mm
K5A3240YBA-T970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM					11 mm
K5A3240YBB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM				.00001 Amp	11 mm	80 ns
K5A3A41YTA-K970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM					11 mm
K5P2881BCM-F0700	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words	2.6			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B69		2.9 V	1.2 mm	8 mm	Not Qualified	134217728 bit	2.4 V	SRAM IS ORGANIZED AS 512K X 16					11 mm
K5A3380YTA-T955	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM					11 mm
K5A3240YBA-T870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM					11 mm
K5Q6432YCM-T010	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	25 mA	8388608 words	3	FLASH+PSRAM	3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	8MX8	8M	-25 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	67108864 bit	2.7 V	IT ALSO CONTAINS 2M X 16 UTRAM				.00015 Amp	13 mm	100 ns
K5A3340YTA-T370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM					11 mm
K5A3280YTB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM				.000015 Amp	11 mm	70 ns
K5A3380YBB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM				.000015 Amp	11 mm	80 ns
K5A3240YTA-T970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM					11 mm
K5A3280YBC-T8550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 1M X 8 / 512K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8					11 mm
K5A3240YTB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM				.00001 Amp	11 mm	70 ns
K5N1229ACD-BQ120	Samsung	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm		536870912 bit	1.7 V	SRAM IS ORGANISED AS 8M X 16					9.2 mm
K5A3280YTA-T955	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM					11 mm
K5P2880YCM-T085	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	30 mA	16777216 words	3	FLASH+SRAM	3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	16MX8	16M	-25 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	134217728 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM				.000005 Amp	13 mm	10000 ns
K5A3280YBB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM				.000015 Amp	11 mm	80 ns
K5A3240YTC-T8550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8					11 mm
K5P5781FCM-F0550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words	2.65			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	R-PBGA-B69		2.9 V	1.2 mm	8 mm	Not Qualified	268435456 bit	2.4 V	SRAM IS ORGANIZED AS 512K X 16					11 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.