VFBGA Other Function Memory ICs 152

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
MT29C1G12MAVRACA-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	131072 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel	128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B152	1.95 V	.9 mm	14 mm	Not Qualified	2097152 bit	1.7 V		e1			14 mm
MT29C1G12MAADVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm		536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260	9 mm
MT29C1G12MADRACG-75IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	131072 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel	128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B152	1.95 V	1 mm	14 mm	Not Qualified	2097152 bit	1.7 V		e1			14 mm
MT29C4G48MAYBAAKS-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	67108864 words	1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	64MX32	64M	-25 Cel		BOTTOM	R-PBGA-B137	1.95 V	1 mm	10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED	13 mm
MT29C4G48MAYAPAKQ-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	268435456 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	.75 mm	12 mm		4294967296 bit	1.7 V		e1			12 mm
MT29C2G24MAKLACG-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	131072 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel	128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B152	1.95 V	1 mm	14 mm	Not Qualified	2097152 bit	1.7 V		e1			14 mm
MT29C2G24MAKLACG-75IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	131072 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel	128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B152	1.95 V	1 mm	14 mm	Not Qualified	2097152 bit	1.7 V		e1			14 mm
MT29C4G96MAYBACJG-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	268435456 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel	256MX16	256M	-25 Cel		BOTTOM	S-PBGA-B168	1.95 V	.9 mm	12 mm	Not Qualified	4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED	12 mm	25 ns
MT29C8G96MAZAPDJV-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	536870912 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	512MX16	512M	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	1 mm	12 mm		8589934592 bit	1.7 V		e1			12 mm
MT29TZZZ8D5JKEZB-107W.95Q	Micron Technology	MEMORY CIRCUIT	OTHER	221	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	268435456 words	1.2			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	256MX32	256M	-30 Cel		BOTTOM	R-PBGA-B221	1.3 V	.8 mm	11.5 mm		8589934592 bit	1.14 V	IT ALSO OPERATES AT SUPPLY VOLTAGE 1.7 TO 1.95 V; ALSO ORGANISED AS 512M X 16		NOT SPECIFIED	NOT SPECIFIED	13 mm
MT29PZZZ4D4BKESK-18W.94H	Micron Technology	MEMORY CIRCUIT	OTHER	162	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	134217728 words	1.2			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	128MX32	128M	-30 Cel		BOTTOM	R-PBGA-B162	1.3 V	.9 mm	11.5 mm		4294967296 bit	1.14 V	IT ALSO OPERATES AT SUPPLY VOLTAGE 1.7 TO 1.95 V; ALSO ORGANISED AS 256M X 16				13 mm
MT29C4G48MAZBAAKS-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	67108864 words	1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	64MX32	64M	-25 Cel		BOTTOM	R-PBGA-B137	1.95 V	1 mm	10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED	13 mm
MT29C1G12MAACYAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm		536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260	9 mm
MT29C4G96MAZBACJG-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	268435456 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	256MX16	256M	-40 Cel		BOTTOM	S-PBGA-B168	1.95 V	.9 mm	12 mm		4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED	12 mm
MT29C1G12MAAIVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	128MX8	128M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	IT ALSO CONTAINS 512MBIT(32MBIT X 16) MOBILE LPDDR		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C4G48MAPLCJG-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	131072 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	128KX16	128K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	S-PBGA-B168	1.95 V	.9 mm	12 mm	Not Qualified	2097152 bit	1.7 V		e1	30	260	12 mm
MT29C4G48MAPLCCA-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	131072 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel	128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B152	1.95 V	.9 mm	14 mm	Not Qualified	2097152 bit	1.7 V		e1			14 mm
MT29C4G48MAZAPAKQ-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	131072 words	1.8	FLASH+SDRAM		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	.75 mm	12 mm	Not Qualified	2097152 bit	1.7 V		e1			12 mm
MT29C1G12MAAIYAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	128MX8	128M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C2G24MAAAAKAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	33554432 words	1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C4G48MAPLCCA-75IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	131072 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel	128KX16	128K	-40 Cel		BOTTOM	S-PBGA-B152	1.95 V	.9 mm	14 mm	Not Qualified	2097152 bit	1.7 V					14 mm
MT29C1G12MAAIVAMD-5ITTR	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	128MX8	128M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C4G48MAZAPAKQ-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	268435456 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	.75 mm	12 mm		4294967296 bit	1.7 V		e1			12 mm
MT29C1G12MAURACA-75IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	131072 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel	128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B152	1.95 V	.9 mm	14 mm	Not Qualified	2097152 bit	1.7 V		e1			14 mm
MT29C2G24MAAAAHAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	33554432 words	1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C2G24MAABAHAMD-5EIT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	33554432 words	1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16				9 mm
MT29C1G12MAAJVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	64MX16	64M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	IT ALSO CONTAINS 512MBIT(32MBIT X 16) MOBILE LPDDR		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C1G12MADRACG-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	131072 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel	128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B152	1.95 V	1 mm	14 mm	Not Qualified	2097152 bit	1.7 V		e1			14 mm
MT29C4G48MAZBBAKQ-48IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	268435456 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel	256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.9 V	.75 mm	12 mm	Not Qualified	4294967296 bit	1.7 V		e1			12 mm	25 ns
MT29C8G96MAYBADJV-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	536870912 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel	512MX16	512M	-25 Cel		BOTTOM	S-PBGA-B168	1.95 V	1 mm	12 mm	Not Qualified	8589934592 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED	12 mm	25 ns
MT29C2G24MAKLAJG-75IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	131072 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel	128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	.9 mm	12 mm	Not Qualified	2097152 bit	1.7 V		e1			12 mm
MT29C4G96MAZAPCJG-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	268435456 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	.9 mm	12 mm		4294967296 bit	1.7 V		e1			12 mm
MT29C1G12MAAJYAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	64MX16	64M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C1G12MAACVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm		536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260	9 mm
MT29C8G96MAZAPDJV-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	536870912 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	512MX16	512M	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	1 mm	12 mm		8589934592 bit	1.7 V		e1			12 mm
MT29C2G24MAABAKAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	33554432 words	1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16				9 mm
MT29C8G96MAZBBDJV-48IT	Micron Technology	MEMORY CIRCUIT		168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	536870912 words	1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20		.5 mm	85 Cel	512MX16	512M	-40 Cel		BOTTOM	S-PBGA-B168	1.95 V	1 mm	12 mm		8589934592 bit	1.7 V	IT IS ALSO HAVING 4GBIT (X 32) LPDDR		NOT SPECIFIED	NOT SPECIFIED	12 mm
MT29C1G12MAAIYAMR-5AIT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	128MX8	128M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C1G12MAADYAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm		536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260	9 mm
MT29C8G96MAZBADJV-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	536870912 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	512MX16	512M	-40 Cel		BOTTOM	S-PBGA-B168	1.95 V	1 mm	12 mm		8589934592 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED	12 mm
MT29C4G48MAYBBAHK-48AIT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	137	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	536870912 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	512MX8	512M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B137	1.95 V	1 mm	10.5 mm		4294967296 bit	1.7 V	IT IS ALSO HAVING 2GBIT (X 32) LPDDR	e1	30	260	13 mm
MT29C2G24MAABAHAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	33554432 words	1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C2G24MAKLAJG-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	131072 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel	128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	.9 mm	12 mm	Not Qualified	2097152 bit	1.7 V		e1			12 mm
MT29C4G48MAYBAAKQ-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	268435456 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	256MX16	256M	-25 Cel		BOTTOM	S-PBGA-B168	1.95 V	.75 mm	12 mm		4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED	12 mm
MT29GZ5A3BPGGA-53IT.87K	Micron Technology	MEMORY CIRCUIT		149	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	536870912 words	1.1	FLASH+SDRAM		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA149,14X16,20		.5 mm	85 Cel	512MX8	512M	-40 Cel		BOTTOM	R-PBGA-B149	1.17 V	.8 mm	8 mm		4294967296 bit	1.06 V	DRAM IS ORGANISED AS 128M X 16, IT ALSO REQUIRES 1.8 V NOMINAL SUPPLY VOLTAGE				9.5 mm
MT29GZ5A3BPGGA-046IT.87K	Micron Technology	MEMORY CIRCUIT		149	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	536870912 words	1.1	FLASH+SDRAM		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA149,14X16,20		.5 mm	85 Cel	512MX8	512M	-40 Cel		BOTTOM	R-PBGA-B149	1.17 V	.8 mm	8 mm		4294967296 bit	1.06 V	DRAM IS ORGANISED AS 128M X 16, IT ALSO REQUIRES 1.8 V NOMINAL SUPPLY VOLTAGE				9.5 mm
MT29GZ6A6BPIET-53AIT.112	Micron Technology	MEMORY CIRCUIT		149	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	536870912 words	1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA149,14X16,20		.5 mm	85 Cel	512MX16	512M	-40 Cel		BOTTOM	R-PBGA-B149	1.95 V	1 mm	8 mm		8589934592 bit	1.7 V					9.5 mm	3.5 ns
MT29GZ5A3BPGGA-53AAT.87K	Micron Technology	MEMORY CIRCUIT		149	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	134217728 words	1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA149,14X16,20		.5 mm	105 Cel	128MX16	128M	-40 Cel		BOTTOM	R-PBGA-B149	1.95 V	.8 mm	8 mm		2147483648 bit	1.7 V					9.5 mm	3.5 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.