VFBGA Other Function Memory ICs 152

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Interleaved Burst Length Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

MT29GZ5A5BPGGA-046AAT.87J

Micron Technology

MEMORY CIRCUIT

149

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SYNCHRONOUS

268435456 words

1.8

FLASH+LPDDR

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA149,14X16,20

.5 mm

105 Cel

256MX16

256M

-40 Cel

BOTTOM

R-PBGA-B149

1.95 V

.8 mm

8 mm

4294967296 bit

1.7 V

9.5 mm

3.5 ns

MT29GZ5A3BPGGA-53AIT.87K

Micron Technology

MEMORY CIRCUIT

149

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SYNCHRONOUS

134217728 words

1.8

FLASH+LPDDR

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA149,14X16,20

.5 mm

85 Cel

128MX16

128M

-40 Cel

BOTTOM

R-PBGA-B149

1.95 V

.8 mm

8 mm

2147483648 bit

1.7 V

9.5 mm

3.5 ns

MT29GZ5A5BPGGA-53AIT.87J

Micron Technology

MEMORY CIRCUIT

149

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SYNCHRONOUS

268435456 words

1.8

FLASH+LPDDR

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA149,14X16,20

.5 mm

85 Cel

256MX16

256M

-40 Cel

BOTTOM

R-PBGA-B149

1.95 V

.8 mm

8 mm

4294967296 bit

1.7 V

9.5 mm

3.5 ns

MT29GZ5A3BPGGA-046AIT.87K

Micron Technology

MEMORY CIRCUIT

149

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SYNCHRONOUS

134217728 words

1.8

FLASH+LPDDR

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA149,14X16,20

.5 mm

85 Cel

128MX16

128M

-40 Cel

BOTTOM

R-PBGA-B149

1.95 V

.8 mm

8 mm

2147483648 bit

1.7 V

9.5 mm

3.5 ns

MT29GZ6A6BPIET-046AAT.112

Micron Technology

MEMORY CIRCUIT

149

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SYNCHRONOUS

536870912 words

1.8

FLASH+LPDDR

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA149,14X16,20

.5 mm

105 Cel

512MX16

512M

-40 Cel

BOTTOM

R-PBGA-B149

1.95 V

1 mm

8 mm

8589934592 bit

1.7 V

9.5 mm

3.5 ns

MT29GZ5A5BPGGA-046AIT.87J

Micron Technology

MEMORY CIRCUIT

149

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SYNCHRONOUS

268435456 words

1.8

FLASH+LPDDR

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA149,14X16,20

.5 mm

85 Cel

256MX16

256M

-40 Cel

BOTTOM

R-PBGA-B149

1.95 V

.8 mm

8 mm

4294967296 bit

1.7 V

9.5 mm

3.5 ns

MT29GZ5A3BPGGA-046AAT.87K

Micron Technology

MEMORY CIRCUIT

149

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SYNCHRONOUS

134217728 words

1.8

FLASH+LPDDR

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA149,14X16,20

.5 mm

105 Cel

128MX16

128M

-40 Cel

BOTTOM

R-PBGA-B149

1.95 V

.8 mm

8 mm

2147483648 bit

1.7 V

9.5 mm

3.5 ns

MT29GZ5A5BPGGA-53AAT.87J

Micron Technology

MEMORY CIRCUIT

149

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SYNCHRONOUS

268435456 words

1.8

FLASH+LPDDR

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA149,14X16,20

.5 mm

105 Cel

256MX16

256M

-40 Cel

BOTTOM

R-PBGA-B149

1.95 V

.8 mm

8 mm

4294967296 bit

1.7 V

9.5 mm

3.5 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.