VFBGA Other Function Memory ICs 152

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Interleaved Burst Length Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

S72XS256RE0AHBJ23

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16MX16

16M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

268435456 bit

1.7 V

8 mm

S72XS128RD0AHBJH3

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72XS256RD0AHBHD0

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

8 mm

S72XS128RD0AHBJ13

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72XS128RD0AHBGE0

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

8 mm

S72NS128RD0AHBM40

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

DRAM IS ORGANISED AS 8M X 16

8 mm

S72NS128RD0AHBG43

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

DRAM IS ORGANISED AS 8M X 16

8 mm

S72XS128RD0AHBJ10

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72XS128RD0AHBH20

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72XS128RD0AHBH10

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72XS128RD0AHBGE3

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

8 mm

S72XS128RD0AHBHD0

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72XS256RD0AHBJE0

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

8 mm

S72XS128RD0AHBGD3

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

8 mm

S72XS128RD0AHBH23

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72XS256RD0AHBGD3

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

8 mm

S72XS128RD0AHBJ20

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72NS128RD0AHBL40

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

DRAM IS ORGANISED AS 8M X 16

8 mm

S72NS256RD0AHBM00

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

DRAM IS ORGANISED AS 8M X 16

8 mm

S72VS256RE0AHBHH0

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16MX16

16M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

268435456 bit

1.7 V

8 mm

S72XS128RD0AHBJH0

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72NS128RD0AHBM43

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

DRAM IS ORGANISED AS 8M X 16

8 mm

S72XS256RE0AHBHD0

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

268435456 bit

1.7 V

8 mm

S72XS256RE0AHBHD3

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

268435456 bit

1.7 V

8 mm

S72XS256RD0AHBJD0

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

8 mm

S72NS512RE0AHGL43

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

32MX16

32M

-25 Cel

BOTTOM

R-PBGA-B133

1.95 V

1 mm

10 mm

Not Qualified

536870912 bit

1.7 V

DRAM IS ORGANISED AS 16M X 16

11 mm

S72XS128RD0AHBGD0

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

8 mm

S72XS256RD0AHBGE3

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

8 mm

S72XS128RD0AHBJE0

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

8 mm

S72NS128RD0AHBL43

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

DRAM IS ORGANISED AS 8M X 16

8 mm

S72XS256RE0AHBHE3

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

268435456 bit

1.7 V

8 mm

S72VS256RE0AHBJH0

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16MX16

16M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

268435456 bit

1.7 V

8 mm

S72XS128RD0AHBH13

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72XS256RD0AHBHD3

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

8 mm

S72XS256RD0AHBJE3

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

8 mm

DS2401X1

Maxim Integrated

MEMORY CIRCUIT

INDUSTRIAL

2

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

64 words

5

3/5

1

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA2,1X2,28

Other Memory ICs

.704 mm

85 Cel

64X1

64

-40 Cel

Tin/Lead (Sn/Pb)

BOTTOM

R-PBGA-B2

1

6 V

.649 mm

.661 mm

Not Qualified

64 bit

2.8 V

e0

20

240

1.321 mm

JZ58F0085M0Y0GG

Micron Technology

MEMORY CIRCUIT

104

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.65 mm

32MX16

32M

BOTTOM

S-PBGA-B104

1.95 V

.9 mm

10 mm

536870912 bit

1.7 V

PSRAM DIE DENSITY-128 MBIT

30

260

10 mm

N14071F0B1F5D21F

Micron Technology

MEMORY CIRCUIT

OTHER

133

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

134217728 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

128MX16

128M

-25 Cel

BOTTOM

R-PBGA-B133

1.95 V

1 mm

10 mm

2147483648 bit

1.7 V

IT ALSO CONTAINS 512MBIT(32MBIT X 16) LPSDRAM

11 mm

M39L0R8090U3ZE6F

Micron Technology

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133, 14X14,20

.5 mm

85 Cel

32MX16

32M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

536870912 bit

1.7 V

FLASH IS ORGANISED AS 256M X 1

8 mm

M39L0R8090U3ZE6E

Micron Technology

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

32MX16

32M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

536870912 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

JZ58F0085M0Y0GF

Micron Technology

MEMORY CIRCUIT

104

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.65 mm

32MX16

32M

BOTTOM

S-PBGA-B104

1.95 V

.9 mm

10 mm

536870912 bit

1.7 V

PSRAM DIE DENSITY-128 MBIT

30

260

10 mm

MT38M4041A3034EZZI.XK6

Micron Technology

MEMORY CIRCUIT

INDUSTRIAL

56

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16MX16

16M

-40 Cel

BOTTOM

S-PBGA-B56

1.95 V

1 mm

8 mm

268435456 bit

1.7 V

IT ALSO CONTAINS 128MBIT(8MBIT X 16) PSRAM

8 mm

N14071F0B1F5D21E

Micron Technology

MEMORY CIRCUIT

OTHER

133

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

134217728 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

128MX16

128M

-25 Cel

BOTTOM

R-PBGA-B133

1.95 V

1 mm

10 mm

2147483648 bit

1.7 V

IT ALSO CONTAINS 512MBIT(32MBIT X 16) LPSDRAM

11 mm

MT38M5041A3034EZZI.XR6

Micron Technology

MEMORY CIRCUIT

INDUSTRIAL

56

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

32MX16

32M

-40 Cel

BOTTOM

S-PBGA-B56

1.95 V

1 mm

8 mm

536870912 bit

1.7 V

IT ALSO CONTAINS 128MBIT(8MBIT X 16) PSRAM

8 mm

MT29C1G12MAURACA-6IT

Micron Technology

MEMORY CIRCUIT

INDUSTRIAL

152

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

131072 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA152,21X21,25

Other Memory ICs

.65 mm

85 Cel

128KX16

128K

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B152

1.95 V

.9 mm

14 mm

Not Qualified

2097152 bit

1.7 V

e1

14 mm

MT29C8G96MAZBADJV-5WT

Micron Technology

MEMORY CIRCUIT

OTHER

168

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

536870912 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA168,23X23,20

Other Memory ICs

.5 mm

85 Cel

512MX16

512M

-25 Cel

BOTTOM

S-PBGA-B168

1.95 V

1 mm

12 mm

Not Qualified

8589934592 bit

1.7 V

MOBILE LPDDR DEVICE ALSO AVAILABLE

NOT SPECIFIED

NOT SPECIFIED

12 mm

25 ns

MT29C1G12MAVRACA-75IT

Micron Technology

MEMORY CIRCUIT

INDUSTRIAL

152

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

131072 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA152,21X21,25

Other Memory ICs

.65 mm

85 Cel

128KX16

128K

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B152

1.95 V

.9 mm

14 mm

Not Qualified

2097152 bit

1.7 V

e1

14 mm

MT29C4G96MAZBBCJV-48IT

Micron Technology

MEMORY CIRCUIT

168

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

268435456 words

1.8

FLASH+LPDDR

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA168,23X23,20

.5 mm

85 Cel

256MX16

256M

-40 Cel

BOTTOM

S-PBGA-B168

1.95 V

1 mm

12 mm

4294967296 bit

1.7 V

IT IS ALSO HAVING 4GBIT (X 32) LPDDR

12 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.