COMMERCIAL Other Function Memory ICs 1,473

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MR2A16AYS35	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		256KX16	256K		MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	40	260	.028 Amp	18.41 mm	35 ns
MR0A16AYS35	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS	155 mA	262144 words			3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		256KX16	256K		MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	40	260	.028 Amp	18.41 mm	35 ns
MR256A08BYS35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	32768 words			3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		32KX8	32K			DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	18.41 mm	35 ns
MR256A08BYS35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	32768 words			3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		32KX8	32K			DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	18.41 mm	35 ns
MR256A08BSO35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	32768 words			3.3	3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.25 mm	70 Cel		32KX8	32K			DUAL		R-PDSO-G32		3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	20.726 mm	35 ns
MR256A08BMA35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	32768 words			3.3	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		32KX8	32K			BOTTOM		S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	8 mm	35 ns
MR2A16ATS35C	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		256KX16	256K		MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	40	260	.028 Amp	18.41 mm	35 ns
MR256A08BMA35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	32768 words			3.3	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		32KX8	32K			BOTTOM		S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	8 mm	35 ns
MR256A08BSO35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	32768 words			3.3	3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.25 mm	70 Cel		32KX8	32K			DUAL		R-PDSO-G32		3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	20.726 mm	35 ns
MR0D08BMA45R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	131072 words			3.3	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	70 Cel		128KX8	128K			BOTTOM		S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.008 Amp	8 mm	45 ns
MR0A08BYS35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	131072 words			3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		128KX8	128K			DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V					.007 Amp	18.41 mm	35 ns
SSDPE2KX010T801	Intel	MEMORY CIRCUIT	COMMERCIAL				RECTANGULAR	UNSPECIFIED		1	CMOS		ASYNCHRONOUS		1099511627776 words					8					70 Cel		1TX8	1T												8796093022208 bit
SSDSC2BB240G701	Intel	MEMORY CIRCUIT	COMMERCIAL				RECTANGULAR			1	CMOS	NO LEAD	ASYNCHRONOUS		257698037760 words					8					70 Cel		240GX8	240G												2061584302080 bit
SSDSC2BB480G701	Intel	MEMORY CIRCUIT	COMMERCIAL							1	CMOS				515396075520 words					8					70 Cel		480GX8	480G												4123168604160 bit
SSDPE2KE032T801	Intel	MEMORY CIRCUIT	COMMERCIAL							1	CMOS				3518437208883.2 words					8					55 Cel		3.2T X 8	3.2T												28147497671065.6 bit
AT88SC0204C-MJ	Microchip Technology	CRYPTO MEMORY	COMMERCIAL	8	DIE		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SYNCHRONOUS		256 words					8	UNCASED CHIP	DIE OR CHIP			70 Cel		256X8	256		Nickel/Gold (Ni/Au)	UPPER	1	R-XUUC-N8	1	5.5 V					2048 bit	2.7 V		e4					35 ns
MR0A08BYS35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	131072 words			3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		128KX8	128K			DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V					.007 Amp	18.41 mm	35 ns
MR256D08BMA45	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	32768 words			3.3	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	70 Cel		32KX8	32K			BOTTOM		S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V			40	260	.008 Amp	8 mm	45 ns
AT88SC25616C-MJ	Microchip Technology	CRYPTO MEMORY	COMMERCIAL	8	XMA		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS		32768 words					8	MICROELECTRONIC ASSEMBLY	MODULE,8LEAD,.46			70 Cel		32KX8	32K		Nickel/Gold (Ni/Au)	UNSPECIFIED	1	R-XXMA-X8		5.5 V					262144 bit	2.7 V		e4					35 ns
AT88SC25616C-MJTG	Microchip Technology	CRYPTO MEMORY	COMMERCIAL	8	XMA		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS		32768 words					8	MICROELECTRONIC ASSEMBLY	MODULE,8LEAD,.46			70 Cel		32KX8	32K		MATTE TIN	UNSPECIFIED	1	R-XXMA-X8		5.5 V					262144 bit	2.7 V							35 ns
MR0A08BMA35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	131072 words			3.3	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		128KX8	128K			BOTTOM		S-PBGA-B48	3	3.6 V	1.35 mm		8 mm	Not Qualified	1048576 bit	3 V					.007 Amp	8 mm	35 ns
MR0A16AYS35R	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS	155 mA	65536 words			3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		64KX16	64K		Matte Tin (Sn)	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e3	40	260	.028 Amp	18.41 mm	35 ns
MR2A16AVYS35R	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		256KX16	256K		MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	40	260	.028 Amp	18.41 mm	35 ns
CY15B108QN-20LPXCES	Infineon Technologies	MEMORY CIRCUIT	COMMERCIAL	8	VSON		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		1048576 words			3.3		8	SMALL OUTLINE, VERY THIN PROFILE			.65 mm	70 Cel		1MX8	1M			DUAL		R-PDSO-N8		3.6 V	.55 mm		3.23 mm		8388608 bit	1.8 V						3.28 mm
D2758	Intel	OTP ROM	COMMERCIAL	24	DIP		RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			1024 words		COMMON			8	IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	1KX8	1K		Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24						Not Qualified	8192 bit			e0					450 ns
SSDSCKJB150G701	Intel	MEMORY CIRCUIT	COMMERCIAL				RECTANGULAR	UNSPECIFIED		1	CMOS		ASYNCHRONOUS		161061273600 words					8					70 Cel		150GX8	150G												1288490188800 bit
MR0A16AMA35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	155 mA	65536 words			3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		64KX16	64K			BOTTOM		S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.012 Amp	8 mm	35 ns
SAA4955HL	NXP Semiconductors	MEMORY CIRCUIT	COMMERCIAL	44	QFP		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	70 mA	245772 words			3.3	3.3	12	FLATPACK	QFP44,.47SQ,32	Other Memory ICs	.8 mm	70 Cel		245772X12	245772		Tin (Sn)	QUAD		S-PQFP-G44		3.6 V				Not Qualified	2949264 bit	3 V	IT ALSO REQUIRES 3 TO 5.5V SUPPLY	e3			.01 Amp		21 ns
SAA4955TJ	NXP Semiconductors	MEMORY CIRCUIT	COMMERCIAL	40	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SYNCHRONOUS	70 mA	245772 words			3.3	3.3	12	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel		245772X12	245772		TIN	DUAL		R-PDSO-J40		3.6 V				Not Qualified	2949264 bit	3 V	IT ALSO REQUIRES 3 TO 5.5V SUPPLY	e3			.01 Amp		21 ns
SAA4955TJ/V1	NXP Semiconductors	MEMORY CIRCUIT	COMMERCIAL	40	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SYNCHRONOUS		245772 words			3.3		12	SMALL OUTLINE				70 Cel		245772X12	245772			DUAL		R-PDSO-J40		3.6 V				Not Qualified	2949264 bit	3 V
MR10Q010SCR	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	16	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	220 mA	131072 words			3.3	1.8,3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	70 Cel		128KX8	128K			DUAL		R-PDSO-G16		3.6 V	2.64 mm		7.52 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.005 Amp	10.34 mm
DS1213D	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE									IN-LINE			2.54 mm	70 Cel					Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28			11.94 mm		15.24 mm	Not Qualified				e0	20	240		40.64 mm
DS1213B	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE									IN-LINE			2.54 mm	70 Cel					TIN LEAD	DUAL		R-PDIP-T28	1		11.94 mm		15.24 mm	Not Qualified				e0				35.56 mm
TC528257J-70	Toshiba	VIDEO DRAM	COMMERCIAL	40	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND		160 mA	262144 words			5	5	8	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel		256KX8	256K			DUAL		R-PDSO-J40						Not Qualified	2097152 bit						.01 Amp		70 ns
XC17S150XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	1040128 words		COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	1040128X1	1040128		TIN LEAD	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	1040128 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
CT1000MX500SSD1	Micron Technology	MEMORY CIRCUIT	COMMERCIAL				RECTANGULAR	UNSPECIFIED		1	CMOS		ASYNCHRONOUS		1099511627776 words					8					70 Cel		1TX8	1T												8796093022208 bit				NOT SPECIFIED	NOT SPECIFIED
MT42C4064Z-15	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	24	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE		60 mA	65536 words			5	5	4	IN-LINE	ZIP24,.1	Other Memory ICs	1.27 mm	70 Cel		64KX4	64K		Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T24						Not Qualified	262144 bit			e0			.004 Amp		150 ns
TC518512FL-80	Toshiba		COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		60 mA	524288 words	NO	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs	1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	4194304 bit			e0			.0002 Amp		80 ns
XC17S20PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	10 mA	178144 words		COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	178144X1	178144		Tin/Lead (Sn85Pb15)	DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	178144 bit	4.75 V		e0	30	225	.00005 Amp	9.3599 mm
MCM6674L	Motorola		COMMERCIAL	18	DIP		RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE									IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel					Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18						Not Qualified				e0
MT18VDDF12872DY-335F1	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		5220 mA	134217728 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128MX72	128M			DUAL		R-PDMA-N184				166 MHz		Not Qualified	9663676416 bit						.09 Amp		.7 ns
SSDSCKJB150G7	Intel	MEMORY CIRCUIT	COMMERCIAL				RECTANGULAR	UNSPECIFIED		1	CMOS		ASYNCHRONOUS		161061273600 words					8					70 Cel		150GX8	150G												1288490188800 bit
C1702A	Intel		COMMERCIAL	24	DIP		RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			256 words		COMMON			8	IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	256X8	256		Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24						Not Qualified	2048 bit			e0					1000 ns
MM5262N	National Semiconductor		COMMERCIAL	22	DIP	32	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			2048 words		SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel		2KX1	2K		Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T22						Not Qualified	2048 bit			e0
P1103	Intel		COMMERCIAL	18	DIP	32	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			1024 words		SEPARATE			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel		1KX1	1K		Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18						Not Qualified	1024 bit			e0					300 ns
SSDSA2BW160G3	Intel	MEMORY CIRCUIT	COMMERCIAL				UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		171798691840 words					8	MICROELECTRONIC ASSEMBLY				70 Cel		160GX8	160G			UNSPECIFIED		X-XXMA-N							1374389534720 bit
SSDSA2BW160G301	Intel	MEMORY CIRCUIT	COMMERCIAL				UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		171798691840 words					8	MICROELECTRONIC ASSEMBLY				70 Cel		160GX8	160G			UNSPECIFIED		X-XXMA-N							1374389534720 bit
TC518128AFL-80	Toshiba		COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.5	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	1048576 bit			e0			.0002 Amp		80 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.