OTHER Other Function Memory ICs 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Interleaved Burst Length Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

NAND01GW3M5CZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND512W4M2BZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

NAND512R4M0CZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA107,10X14,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B107

Not Qualified

NAND01GR4M5AZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND01GR3M4AZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND01GR4M0CZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA107,10X14,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B107

Not Qualified

M36W0R6040B0ZAQ

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

45 mA

4194304 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

4MX16

4M

-30 Cel

TIN LEAD

BOTTOM

R-PBGA-B88

1.95 V

1.2 mm

8 mm

Not Qualified

67108864 bit

1.7 V

PSRAM IS ORGANIZED AS 1M X 16

e0

.00011 Amp

10 mm

70 ns

NAND01GR3M4AZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND01GR3M5AZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND512R3M0CZBE

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

67108864 words

1.8

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

64MX8

64M

-30 Cel

BOTTOM

R-PBGA-B107

1.95 V

1.2 mm

10.5 mm

Not Qualified

536870912 bit

1.7 V

40

260

13 mm

NAND256W3M0CZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA107,10X14,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B107

Not Qualified

NAND512W4M4BZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M36LLR8760T1ZAQE

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

52 mA

16777216 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

16MX16

16M

-25 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B88

1.95 V

1.4 mm

8 mm

Not Qualified

268435456 bit

1.7 V

PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

e1

.00011 Amp

10 mm

NAND256R4M4CZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

LRI64-W4/2GE

STMicroelectronics

MEMORY CIRCUIT

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

64 words

1

UNCASED CHIP

85 Cel

64X1

64

-20 Cel

UPPER

X-XUUC-N

3 V

64 bit

1.5 V

NAND512W4M5AZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND512W3M3AZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND256R3M0AZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA107,10X14,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B107

Not Qualified

NAND01GW4M3CZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND01GW4M5CZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND256R4M3BZBF

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

16777216 words

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

16MX16

16M

-30 Cel

BOTTOM

R-PBGA-B149

1.95 V

1.2 mm

10 mm

Not Qualified

268435456 bit

1.7 V

40

260

13.5 mm

NAND512W3M2BZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

NAND01GR3M0AZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA107,10X14,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B107

Not Qualified

NAND512R4M4BZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND512R3M4AZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND512W3M3AZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND01GW4M2CZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

NAND256W4M2AZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

NAND512W4M3BZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M39P0R9070E0ZADE

STMicroelectronics

MEMORY CIRCUIT

OTHER

105

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

33554432 words

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

32MX16

32M

-25 Cel

BOTTOM

R-PBGA-B105

1.95 V

1.2 mm

9 mm

Not Qualified

536870912 bit

1.7 V

SYNCHRONOUS BURST MODE ALSO POSSIBLE

40

260

11 mm

NAND256W4M5BZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND01GW3M0CZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA107,10X14,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B107

Not Qualified

NAND512R4M5AZBF

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

67108864 words

1.8

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

64MX8

64M

-30 Cel

BOTTOM

R-PBGA-B149

1.95 V

1.2 mm

10 mm

Not Qualified

536870912 bit

1.7 V

40

260

13.5 mm

NAND256W3M5CZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M36L0R7040B0ZAQ

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

47 mA

8388608 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

8MX16

8M

-25 Cel

TIN LEAD

BOTTOM

R-PBGA-B88

1.95 V

1.2 mm

8 mm

Not Qualified

134217728 bit

1.7 V

PSRAM IS ORGANIZED AS 1M X 16

e0

.00007 Amp

10 mm

NAND256R4M5CZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M36L0R7050B0ZAQT

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

47 mA

8388608 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

8MX16

8M

-25 Cel

TIN LEAD

BOTTOM

R-PBGA-B88

1.95 V

1.2 mm

8 mm

Not Qualified

134217728 bit

1.7 V

PSRAM IS ORGANIZED AS 2M X 16

e0

.00007 Amp

10 mm

NAND256W4M2AZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

NAND512R4M2BZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

NAND256W3M3AZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND256R3M4AZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND512W3M4CZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND01GW3M4AZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M36LLR8760M1ZAQT

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

52 mA

16777216 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

16MX16

16M

-25 Cel

TIN LEAD

BOTTOM

R-PBGA-B88

1.95 V

1.4 mm

8 mm

Not Qualified

268435456 bit

1.7 V

PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

e0

.00011 Amp

10 mm

NAND512R4M3CZBE

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

67108864 words

1.8

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

64MX8

64M

-30 Cel

BOTTOM

R-PBGA-B149

1.95 V

1.2 mm

10 mm

Not Qualified

536870912 bit

1.7 V

40

260

13.5 mm

NAND256R3M2CZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

M36LLR8760B1ZAQE

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

52 mA

16777216 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

16MX16

16M

-25 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B88

1.95 V

1.4 mm

8 mm

Not Qualified

268435456 bit

1.7 V

PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

e1

.00011 Amp

10 mm

M69AW024BL70ZB8

STMicroelectronics

OTHER

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

20 mA

1048576 words

COMMON

3

3

16

GRID ARRAY, FINE PITCH

BGA48,6X8,30

Other Memory ICs

.75 mm

85 Cel

3-STATE

1MX16

1M

-30 Cel

BOTTOM

R-PBGA-B48

Not Qualified

16777216 bit

.00007 Amp

70 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.