OTHER Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
DS1996L-F5	Maxim Integrated	MEMORY CIRCUIT	OTHER	2			ROUND	METAL	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		65536 words				3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs		70 Cel		64KX1	64K	-40 Cel		END	O-MEDB-N2		6 V			Not Qualified	65536 bit	2.8 V			NOT SPECIFIED	NOT SPECIFIED			15000 ns
DS1996L-F5+	Analog Devices	MEMORY CIRCUIT	OTHER	2			ROUND	METAL	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		8192 words				3/5	8	DISK BUTTON	BUTTON,.68IN	SRAMs		70 Cel		8KX8	8K	-40 Cel		END	O-MEDB-N2		6 V			Not Qualified	65536 bit	2.8 V			NOT SPECIFIED	NOT SPECIFIED
DS1992L-F5	Maxim Integrated	MEMORY CIRCUIT	OTHER	2			ROUND	METAL	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1024 words				3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs		70 Cel		1KX1	1K	-40 Cel		END	O-MEDB-N2		6 V			Not Qualified	1024 bit	2.8 V		e0	NOT SPECIFIED	NOT SPECIFIED			15000 ns
DS1992L-F5+	Analog Devices	MEMORY CIRCUIT	OTHER	2			ROUND	METAL	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1024 words				3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs		70 Cel		1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed	END	O-MEDB-N2	1	6 V			Not Qualified	1024 bit	2.8 V		e3					15000 ns
THGBMDG5D1LBAIT	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL			4294967296 words					8	GRID ARRAY				85 Cel		4GX8	4G	-25 Cel		BOTTOM	R-PBGA-B153						34359738368 bit
DS1994L-F5	Maxim Integrated	MEMORY CIRCUIT	OTHER	2			ROUND	METAL	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4096 words		3		3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs		70 Cel		4KX1	4K	-40 Cel	TIN LEAD	END	O-MEDB-N2	1	6 V			Not Qualified	4096 bit	2.8 V		e0					15000 ns
DS1994L-F5+	Maxim Integrated	MEMORY CIRCUIT	OTHER	2			ROUND	METAL	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4096 words		3		3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs		70 Cel		4KX1	4K	-40 Cel	MATTE TIN	END	O-MEDB-N2	1	6 V			Not Qualified	4096 bit	2.8 V		e3					15000 ns
DS1993L-F5	Maxim Integrated	MEMORY CIRCUIT	OTHER	2			ROUND	METAL	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4096 words				3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs		70 Cel		4KX1	4K	-40 Cel		END	O-MEDB-N2		6 V			Not Qualified	4096 bit	2.8 V		e0	NOT SPECIFIED	NOT SPECIFIED			15000 ns
DS1993L-F5+	Analog Devices	MEMORY CIRCUIT	OTHER	2			ROUND	METAL	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4096 words				3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs		70 Cel		4KX1	4K	-40 Cel	Matte Tin (Sn) - annealed	END	O-MEDB-N2		6 V			Not Qualified	4096 bit	2.8 V		e3					15000 ns
AF8GUD3-OEM	Atp Electronics	MEMORY CIRCUIT	OTHER		DIE		UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD			8589934592 words					8	UNCASED CHIP				85 Cel		8GX8	8G	-25 Cel		UPPER	X-XUUC-N						68719476736 bit
RP-SMLE04DA1	Panasonic	MEMORY CIRCUIT	OTHER		DIE		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4294967296 words					8	UNCASED CHIP				85 Cel		4GX8	4G	-25 Cel		UPPER	R-XUUC-N						34359738368 bit				NOT SPECIFIED	NOT SPECIFIED
MT29C8G96MAZBADKD-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-25 Cel		BOTTOM	R-PBGA-B137		1.95 V	1.1 mm	10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED		13 mm
MT29C4G96MAZBACJG-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel		256MX16	256M	-25 Cel		BOTTOM	S-PBGA-B168		1.95 V	.9 mm	12 mm	Not Qualified	4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED		12 mm	25 ns
MT43A4G40200NFA-S15:A	Micron Technology	MEMORY CIRCUIT	OTHER	896	BGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		4294967296 words		1.2			4	GRID ARRAY			1 mm	105 Cel		4GX4	4G	0 Cel		BOTTOM	S-PBGA-B896		1.26 V	4.2 mm	31 mm		17179869184 bit	1.14 V	IT ALSO OPERATES AT LOGIC OPERATING TEMPERATURE 0 TO 110 DEG CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED		31 mm
H8BCS0UN0MCR-4EM	Sk Hynix	MEMORY CIRCUIT	OTHER	137	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-30 Cel		BOTTOM	R-PBGA-B137		1.95 V	1.2 mm	10.5 mm		2147483648 bit	1.7 V	ITS ALSO CONTAINS 4GBIT (256MBIT X16) NAND FLASH					13 mm
MTFC16GLTDV-WT	Micron Technology		OTHER	169	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA169,14X28,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B169					Not Qualified	137438953472 bit
MTFC2GMTEA-WT	Micron Technology		OTHER	153	FBGA		SQUARE	PLASTIC/EPOXY	YES			BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	S-PBGA-B153					Not Qualified	17179869184 bit
EMD3D256M08G1-150CBS1R	Everspin Technologies	MEMORY CIRCUIT	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		1.5			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX8	32M	0 Cel		BOTTOM	R-PBGA-B78		1.575 V	1.2 mm	10 mm		268435456 bit	1.425 V			NOT SPECIFIED	NOT SPECIFIED		13 mm
MTFC16GLTAM-WT	Micron Technology		OTHER	153	FBGA		SQUARE	PLASTIC/EPOXY	YES			BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	S-PBGA-B153					Not Qualified	137438953472 bit
MTFC32GLTDM-WT	Micron Technology		OTHER	153	FBGA		SQUARE	PLASTIC/EPOXY	YES			BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	S-PBGA-B153					Not Qualified	274877906944 bit
THGBMHG6C1LBAIL	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL			8589934592 words					8	GRID ARRAY				85 Cel		8GX8	8G	-25 Cel		BOTTOM	R-PBGA-B153						68719476736 bit
S71PL127NB0HHW4U0	Spansion	MEMORY CIRCUIT	OTHER	64	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		3	FLASH+PSRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA64,10X12, 32	Other Memory ICs	.8 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B64			1.2 mm	8 mm	Not Qualified	134217728 bit		PSRAM ORGANISED AS 32M X 1		40	260		11.6 mm	70 ns
MT29PZZZ8D5BKFTF-18W.95L	Micron Technology	MEMORY CIRCUIT	OTHER	162	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		3.3			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX32	128M	-30 Cel		BOTTOM	R-PBGA-B162		3.6 V	1 mm	11.5 mm		4294967296 bit	2.7 V	ALSO ORGANISED AS 256M X 16					13 mm
MT29C4G48MAZBAAKQ-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX16	256M	-25 Cel		BOTTOM	S-PBGA-B168		1.95 V	.75 mm	12 mm		4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED		12 mm
NAND08GAH0FZC5E	Micron Technology		OTHER	153	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL							1.8/3.3,3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	S-PBGA-B153					Not Qualified	8589934592 bit
NMB1XXD128GPSU4	Intel	MEMORY CIRCUIT	OTHER		DIMM		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD			137438953472 words					8					85 Cel		128GX8	128G	0 Cel		DUAL	R-XDMA-N						1099511627776 bit
TMS2400JC	Texas Instruments		OTHER	28	DIP		RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE									IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	85 Cel				-25 Cel		DUAL	R-XDIP-T28					Not Qualified
TMS2501NC	Texas Instruments	MEMORY CIRCUIT	OTHER	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE									IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	85 Cel				-25 Cel		DUAL	R-PDIP-T24					Not Qualified					NOT SPECIFIED	NOT SPECIFIED
TMS2501JC	Texas Instruments	MEMORY CIRCUIT	OTHER	24	DIP		RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE									IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	85 Cel				-25 Cel		DUAL	R-XDIP-T24					Not Qualified					NOT SPECIFIED	NOT SPECIFIED
TMS2400NC	Texas Instruments		OTHER	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE									IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	85 Cel				-25 Cel		DUAL	R-PDIP-T28					Not Qualified
TMS4025NC	Texas Instruments		OTHER	24	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			1024 words	SEPARATE				2	IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	70 Cel	OPEN-DRAIN	1KX2	1K	-25 Cel		DUAL	R-PDIP-T24					Not Qualified	2048 bit
TMS4020NC	Texas Instruments		OTHER	24	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			1024 words	SEPARATE				2	IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	70 Cel	OPEN-DRAIN	1KX2	1K	-25 Cel		DUAL	R-PDIP-T24					Not Qualified	2048 bit
TMS4023NC	Texas Instruments		OTHER	24	DIP	32	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			1024 words	COMMON				1	IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	1KX1	1K	-25 Cel		DUAL	R-PDIP-T24					Not Qualified	1024 bit
SM4461-15JDS	Texas Instruments	VIDEO DRAM	OTHER	24	DIP		RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			65536 words		5		5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	110 Cel		64KX4	64K	-55 Cel		DUAL	R-XDIP-T24					Not Qualified	262144 bit								150 ns
TMS4103NC	Texas Instruments	MEMORY CIRCUIT	OTHER	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE									IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	85 Cel				-25 Cel		DUAL	R-PDIP-T28					Not Qualified					NOT SPECIFIED	NOT SPECIFIED
TMS4100JC	Texas Instruments		OTHER	28	DIP		RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE									IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	85 Cel				-25 Cel		DUAL	R-XDIP-T28					Not Qualified
5962-01-218-1995	Texas Instruments	MEMORY CIRCUIT	OTHER	24	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE									IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	85 Cel				-25 Cel		DUAL	R-PDIP-T24					Not Qualified					NOT SPECIFIED	NOT SPECIFIED
TMS4103JC	Texas Instruments	MEMORY CIRCUIT	OTHER	28	DIP		RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE									IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	85 Cel				-25 Cel		DUAL	R-XDIP-T28					Not Qualified					NOT SPECIFIED	NOT SPECIFIED
TMS4100NC	Texas Instruments		OTHER	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE									IN-LINE	DIP28,.6	Other Memory ICs	2.54 mm	85 Cel				-25 Cel		DUAL	R-PDIP-T28					Not Qualified
DC1920-F3	Analog Devices	MEMORY CIRCUIT	OTHER	2			ROUND	METAL	YES	1	CMOS	NO LEAD									DISK BUTTON				100 Cel				-55 Cel	TIN LEAD	END	O-MEDB-N2					Not Qualified				e0
DC1920-F5	Analog Devices	MEMORY CIRCUIT	OTHER	2			ROUND	METAL	YES	1	CMOS	NO LEAD									DISK BUTTON				100 Cel				-55 Cel	TIN LEAD	END	O-MEDB-N2					Not Qualified				e0
DS1652SB	Analog Devices	MEMORY CIRCUIT	OTHER	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		64 words		5			1	SMALL OUTLINE			1.27 mm	85 Cel		64X1	64	-25 Cel	TIN LEAD	DUAL	R-PDSO-G8	1	5.5 V	2.13 mm	5.285 mm	Not Qualified	64 bit	2.7 V		e0				5.31 mm
LRI64-SBN18/3GE	STMicroelectronics	MEMORY CIRCUIT	OTHER		DIE		UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		64 words					1	UNCASED CHIP				85 Cel		64X1	64	-20 Cel		UPPER	X-XUUC-N		3 V				64 bit	1.5 V
NAND256R4M2CZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL					1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel		BOTTOM	R-PBGA-B137					Not Qualified
NAND01GR3M3BZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL					1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
NAND256R3M0AZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL					1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel		BOTTOM	R-PBGA-B107					Not Qualified
NAND01GR4M3CZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL					1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
M36W108AB120ZM5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	LBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-20 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e1			.00002 Amp	11.8 mm	120 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.