Maxim Integrated Other Function Memory ICs 142

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
DS2405P+	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs	1.27 mm	85 Cel		64X1	64	-40 Cel	MATTE TIN	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	64 bit	2.8 V		e3	30	260		3.94 mm
DS2401X1-S#T	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	2	BCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BU		ASYNCHRONOUS		64 words		5	3/5	1	CHIP CARRIER	BGA2,1X2,28	Other Memory ICs	.704 mm	85 Cel		64X1	64	-40 Cel		BOTTOM		R-XBCC-B2		6 V	.649 mm	.661 mm	Not Qualified	64 bit	2.8 V			NOT SPECIFIED	NOT SPECIFIED		1.321 mm
DS2436Z-W	Maxim Integrated
DS2436B+	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		ASYNCHRONOUS	1.5 mA	256 words			2.7/10	1	CYLINDRICAL	SIP3,.075,50	Other Memory ICs	1.27 mm	85 Cel		256X1	256	-40 Cel	MATTE TIN	BOTTOM		O-PBCY-T3		10 V			Not Qualified	256 bit	2.4 V		e3	30	260
DS2401V	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	LSOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE, LOW PROFILE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6		6 V	1.5 mm	3.76 mm	Not Qualified	64 bit	2.8 V		e0				3.94 mm
DS2423P+	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	C BEND	SERIAL	ASYNCHRONOUS		4096 words	COMMON	3	3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	4KX1	4K	-40 Cel	MATTE TIN	DUAL	1, (1 LINE)	R-PDSO-C6	1	6 V	1.5 mm	3.81 mm	Not Qualified	4096 bit	2.8 V	ALSO CONTAINS 64 BIT LASERED ROM	e3	30	260		3.937 mm	15000 ns
DS2405V	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	LSOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words				1	SMALL OUTLINE, LOW PROFILE			1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6		6 V	1.5 mm	3.76 mm	Not Qualified	64 bit	2.8 V		e0				3.94 mm
DS2401T-SL	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		ASYNCHRONOUS		64 words		5	3/5	1	CYLINDRICAL	SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	BOTTOM		O-PBCY-T3		6 V			Not Qualified	64 bit	2.8 V		e0
DS2405P+T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs	1.27 mm	85 Cel		64X1	64	-40 Cel	MATTE TIN	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	64 bit	2.8 V		e3				3.94 mm
DS2436Z+	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		256 words			2.4/10	1	SMALL OUTLINE	SOP8,.25	Other Memory ICs	1.27 mm	85 Cel		256X1	256	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8	1	10 V	1.75 mm	3.9 mm	Not Qualified	256 bit	2.4 V		e3	30	260		4.9 mm
DS2401Y	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOT-223	Other Memory ICs	2.3 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-G4		6 V	1.8 mm	3.5 mm	Not Qualified	64 bit	2.8 V		e0				6.5 mm
DS2401T	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		ASYNCHRONOUS		64 words			3/5	1	CYLINDRICAL	SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	BOTTOM		O-PBCY-T3		6 V			Not Qualified	64 bit	2.8 V		e0
DS2405Z/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOT-223	SRAMs	2.3 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-G4	1	6 V	1.8 mm	3.5 mm	Not Qualified	64 bit	2.8 V		e0				6.5 mm
DS2401X1	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	2	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		64 words		5	3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA2,1X2,28	Other Memory ICs	.704 mm	85 Cel		64X1	64	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B2	1	6 V	.649 mm	.661 mm	Not Qualified	64 bit	2.8 V		e0	20	240		1.321 mm
DS2401/T&R/SL	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		ASYNCHRONOUS		64 words		5	3/5	1	CYLINDRICAL	SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	BOTTOM		O-PBCY-T3		6 V			Not Qualified	64 bit	2.8 V		e0
DS2436Z+W	Maxim Integrated																												MATTE TIN				1								e3	30	260
DS2405P/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs	1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	64 bit	2.8 V		e0				3.94 mm
DS2405	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		ASYNCHRONOUS		64 words			3/5	1	CYLINDRICAL	SIP3,.1,50	SRAMs	1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	BOTTOM		O-PBCY-T3		6 V			Not Qualified	64 bit	2.8 V		e0
DS2436B/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		ASYNCHRONOUS	1.5 mA	256 words			2.7/10	1	CYLINDRICAL	SIP3,.075,50	Other Memory ICs	1.27 mm	85 Cel		256X1	256	-40 Cel	TIN LEAD	BOTTOM		O-PBCY-T3		10 V			Not Qualified	256 bit	2.4 V		e0
DS2434-E	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3		ROUND	UNSPECIFIED	NO	1	CMOS	WIRE		ASYNCHRONOUS	1.5 mA	256 words			3.6/6.4	1	CYLINDRICAL	SIP3,.075,50	Other Memory ICs	1.27 mm	85 Cel		256X1	256	-40 Cel		BOTTOM		O-XBCY-W3		6.4 V			Not Qualified	256 bit	3.6 V					.000003 Amp
DS2434S/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			1.5 mA				3.6/6.4		SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs	.65 mm	85 Cel				-40 Cel		DUAL		R-PDSO-G16			1.99 mm	5.29 mm	Not Qualified					NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	6.2 mm
DS2434+	Maxim Integrated	MEMORY CIRCUIT		3		ROUND	PLASTIC/EPOXY	NO	1		WIRE									CYLINDRICAL									MATTE TIN	BOTTOM		O-PBCY-W3					Not Qualified				e3
DS2436Z+T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		256 words			2.4/10	1	SMALL OUTLINE	SOP8,.25	Other Memory ICs	1.27 mm	85 Cel		256X1	256	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8		10 V	1.75 mm	3.9 mm	Not Qualified	256 bit	2.4 V		e3	30	260		4.9 mm
DS2423P+T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	C BEND		ASYNCHRONOUS		4096 words		3		1	SMALL OUTLINE			1.27 mm	85 Cel		4KX1	4K	-40 Cel	MATTE TIN	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	4096 bit	2.8 V	ALSO CONTAINS 64 BIT LASERED ROM	e3	30	260		3.94 mm
DS2400Z-XXX	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING				64 words		5		1	SMALL OUTLINE, LOW PROFILE			2.3 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-G3	1	5.5 V	1.7 mm	3.5 mm	Not Qualified	64 bit	4.5 V		e0				6.5 mm
DS2405T	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		ASYNCHRONOUS		64 words				1	CYLINDRICAL				85 Cel		64X1	64	-40 Cel	TIN LEAD	BOTTOM		O-PBCY-T3		6 V			Not Qualified	64 bit	2.8 V		e0
DS2434	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS	WIRE			1.5 mA				3.6/6.4		CYLINDRICAL	SIP3,.075,50	Other Memory ICs	1.27 mm	85 Cel				-40 Cel	TIN LEAD	BOTTOM		O-PBCY-W3	1				Not Qualified				e0
DS2434S	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			1.5 mA				3.6/6.4		SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs	.65 mm	85 Cel				-40 Cel	TIN LEAD	DUAL		R-PDSO-G16	1		1.99 mm	5.29 mm	Not Qualified				e0				6.2 mm
DS2436B	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		ASYNCHRONOUS	1.5 mA	256 words			2.7/10	1	CYLINDRICAL	SIP3,.075,50	Other Memory ICs	1.27 mm	85 Cel		256X1	256	-40 Cel	TIN LEAD	BOTTOM		O-PBCY-T3		10 V			Not Qualified	256 bit	2.4 V		e0
DS2401X1#U	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	2	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL							3/5		GRID ARRAY, FINE PITCH	BGA2,1X2,28	Other Memory ICs	.7 mm	85 Cel				-40 Cel		BOTTOM		R-PBGA-B2					Not Qualified					NOT SPECIFIED	NOT SPECIFIED
DS2436B+T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		ASYNCHRONOUS	1.5 mA	256 words			2.7/10	1	CYLINDRICAL	SIP3,.075,50	Other Memory ICs	1.27 mm	85 Cel		256X1	256	-40 Cel	MATTE TIN	BOTTOM		O-PBCY-T3		10 V			Not Qualified	256 bit	2.4 V		e3	30	260
DS2423P	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	C BEND	SERIAL	ASYNCHRONOUS		4096 words	COMMON	3	3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	4KX1	4K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (1 LINE)	R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	4096 bit	2.8 V	ALSO CONTAINS 64 BIT LASERED ROM	e0	20	240		3.94 mm	15000 ns
DS2400Z	Maxim Integrated		INDUSTRIAL	3			PLASTIC/EPOXY	YES									5	5			SOT-223	Other Memory ICs		85 Cel				-40 Cel	Tin/Lead (Sn/Pb)								Not Qualified				e0
DS2405+T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		ASYNCHRONOUS		64 words			3/5	1	CYLINDRICAL	SIP3,.1,50	SRAMs	1.27 mm	85 Cel		64X1	64	-40 Cel	MATTE TIN	BOTTOM		O-PBCY-T3		6 V			Not Qualified	64 bit	2.8 V		e3
DS2423X	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS		4096 words	COMMON	3.3	3/5	1	GRID ARRAY, VERY THIN PROFILE	BGA6(UNSPEC)	SRAMs	.95 mm	85 Cel	OPEN-DRAIN	4KX1	4K	-40 Cel	TIN LEAD	BOTTOM	1, (1 LINE)	R-PBGA-B6		6 V	.864 mm	1.91 mm	Not Qualified	4096 bit	2.8 V	ALSO CONTAINS 64 BIT LASERED ROM	e0				2.85 mm	15000 ns
DS2400	Maxim Integrated		INDUSTRIAL	3			PLASTIC/EPOXY	NO									5	5			SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel				-40 Cel	Tin/Lead (Sn/Pb)	SINGLE							Not Qualified				e0
DS2400Y-XXX	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING				64 words		5		1	SMALL OUTLINE, LOW PROFILE			2.3 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-G3	1	5.5 V	1.7 mm	3.5 mm	Not Qualified	64 bit	4.5 V		e0				6.5 mm
DS2422X	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL			UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD				1024 words		3.3		1	UNCASED CHIP				85 Cel		1KX1	1K	-40 Cel	TIN LEAD	UPPER		X-XUUC-N		5.5 V			Not Qualified	1024 bit	2.8 V		e0
DS2400-XXX	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE				64 words		5		1	CYLINDRICAL				85 Cel		64X1	64	-40 Cel	TIN LEAD	BOTTOM		O-PBCY-T3		5.5 V			Not Qualified	64 bit	4.5 V		e0
DS2435S	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS	1.5 mA	32 words		3.6	3.6/6.4	8	SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs	.65 mm	85 Cel		32X8	32	-40 Cel	TIN LEAD	DUAL		R-PDSO-G16		6.4 V	1.99 mm	5.29 mm	Not Qualified	256 bit	2.5 V		e0				6.2 mm
DS2436B+W	Maxim Integrated																												MATTE TIN												e3		250
DS2436	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE			1.5 mA	256 words			2.7/10	1	CYLINDRICAL	SIP3,.075,50	Other Memory ICs	1.27 mm	85 Cel		256X1	256	-40 Cel	TIN LEAD	BOTTOM		O-PBCY-T3					Not Qualified	256 bit			e0
DS2435S/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		32 words		3.6		8	SMALL OUTLINE, SHRINK PITCH			.65 mm	85 Cel		32X8	32	-40 Cel	TIN LEAD	DUAL		R-PDSO-G16		6.4 V	1.99 mm	5.29 mm	Not Qualified	256 bit	2.5 V		e0				6.2 mm
DS2405Z+T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOT-223	SRAMs	2.3 mm	85 Cel		64X1	64	-40 Cel	MATTE TIN	DUAL		R-PDSO-G4	1	6 V	1.8 mm	3.5 mm	Not Qualified	64 bit	2.8 V		e3				6.5 mm
DS2405+	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		ASYNCHRONOUS		64 words			3/5	1	CYLINDRICAL	SIP3,.1,50	SRAMs	1.27 mm	85 Cel		64X1	64	-40 Cel	MATTE TIN	BOTTOM		O-PBCY-T3		6 V			Not Qualified	64 bit	2.8 V		e3		250
DS2436Z/TR+W	Maxim Integrated																																									30	260

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.