Micron Technology Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
MT28C256564W18SFT-F70P70BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm		9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1		12 mm
NAND16GAH0HZA5E	Micron Technology		OTHER	169	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		150 mA					1.8/3.3,3.3		GRID ARRAY, FINE PITCH	BGA169,14X28,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B169					Not Qualified	17179869184 bit
PF38F3050L0YCQ0	Micron Technology	MEMORY CIRCUIT		88	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL		35 mA			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm							BOTTOM	R-PBGA-B88					Not Qualified					.00011 Amp		85 ns
MT28C128564W30EFW-F705P706KBTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128516W18DFW-F705P70KBBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e0		10 mm
MT28C128532W30DFW-F706P70KBBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT9VDDT1672G-26AG3	Micron Technology		COMMERCIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2925 mA	16777216 words	COMMON	2.5		2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL	R-PDMA-N184			133 MHz		Not Qualified	1207959552 bit				.027 Amp		.75 ns
MT28C256564W18TFT-F705P706BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm		9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1		12 mm
MT9VDDT6472PHG-202	Micron Technology		COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3150 mA	67108864 words	COMMON	2.5		2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	R-PDMA-N200			125 MHz		Not Qualified	4831838208 bit				.045 Amp		.8 ns
MT28C128516W30DFW-F70P70KTTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e0		10 mm
EBJ10RE8BAFP-AE-E	Micron Technology		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2940 mA	134217728 words	COMMON	1.5		1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	R-PDMA-N240			533 MHz		Not Qualified	9663676416 bit				.83 Amp
MT28C64464W18ABW-F606KBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16	e1		10 mm
PF38F5060M0Y0CK	Micron Technology	MEMORY CIRCUIT		107	TQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		1.8	FLASH+PSRAM		1	FLATPACK, THIN PROFILE	BGA107,9X12,32		.8 mm	85 Cel		512MX1	512M	-25 Cel		BOTTOM	R-PBGA-B107	2 V	1.2 mm		8 mm		536870912 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 128M X 1 BIT			11 mm	96 ns
PF38F5070M0Y0CF	Micron Technology	MEMORY CIRCUIT		107	TQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		1.8	FLASH+PSRAM		1	FLATPACK, THIN PROFILE	BGA107,9X12,32		.8 mm	85 Cel		512MX1	512M	-25 Cel		BOTTOM	R-PBGA-B107	2 V	1.2 mm		9 mm		536870912 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 256M X 1 BIT			11 mm	96 ns
PF38F5050M0Y0CF	Micron Technology	MEMORY CIRCUIT		107	TQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		1.8	FLASH+PSRAM		1	FLATPACK, THIN PROFILE	BGA107,9X12,32		.8 mm	85 Cel		512MX1	512M	-25 Cel		BOTTOM	R-PBGA-B107	2 V	1.2 mm		8 mm		536870912 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 64M X 1 BIT			11 mm	96 ns
PF38F4050M0Y3CF	Micron Technology	MEMORY CIRCUIT		107	TQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		1.8	FLASH+PSRAM		1	FLATPACK, THIN PROFILE	BGA107,9X12,32		.8 mm	85 Cel		256MX1	256M	-25 Cel		BOTTOM	R-PBGA-B107	2 V	1.2 mm		8 mm		268435456 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 64M X 1 BIT			10 mm	96 ns
PF38F4060M0Y3CE	Micron Technology	MEMORY CIRCUIT		107	TQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		1.8	FLASH+PSRAM		1	FLATPACK, THIN PROFILE	BGA107,9X12,32		.8 mm	85 Cel		256MX1	256M	-25 Cel		BOTTOM	R-PBGA-B107	2 V	1.2 mm		8 mm		268435456 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 128M X 1 BIT			10 mm	96 ns
PF38F5060M0Y3CG	Micron Technology	MEMORY CIRCUIT		107	TQFP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		1.8	FLASH+PSRAM		1	FLATPACK, THIN PROFILE	BGA107,9X12,32		.8 mm	85 Cel		512MX1	512M	-25 Cel		BOTTOM	R-PBGA-B107	2 V	1.2 mm		8 mm		536870912 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 64M X 1 BIT			11 mm	96 ns
PF38F5070M0Y3DG	Micron Technology	MEMORY CIRCUIT		56	TFQFP		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		1.8	FLASH+PSRAM		1	FLATPACK, THIN PROFILE, FINE PITCH	BGA56,10X14,20		.5 mm	85 Cel		512MX1	512M	-25 Cel		BOTTOM	S-PBGA-B56	2 V	1.2 mm		8 mm		536870912 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 256M X 1 BIT			8 mm	70 ns
PF38F5060M0Y4DE	Micron Technology	MEMORY CIRCUIT		56	TFQFP		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		1.8	FLASH+PSRAM		1	FLATPACK, THIN PROFILE, FINE PITCH	BGA56,10X14,20		.5 mm	85 Cel		512MX1	512M	-25 Cel		BOTTOM	S-PBGA-B56	2 V	1.2 mm		8 mm		536870912 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 128M X 1 BIT			8 mm	70 ns
MTFDHBL256TDQ-1AT12ATYYTR	Micron Technology	MEMORY CIRCUIT
MTFDHBL128TDQ-1AT12ATYYTR	Micron Technology	MEMORY CIRCUIT
MTFDHBL064TDQ-1AT12ATYYTR	Micron Technology	MEMORY CIRCUIT
MTFDHBL512TDP-1AT12AIYYTR	Micron Technology	MEMORY CIRCUIT
MT5C256K16B2TG25AT	Micron Technology
EBJ17RG4EFWD-GN-F	Micron Technology		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2980 mA	2147483648 words	COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	2GX72	2G	0 Cel		DUAL	R-PDMA-N240			800 MHz		Not Qualified	154618822656 bit						.225 ns
MT18HVF12872PY-40E	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		4140 mA	134217728 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	55 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	R-PDMA-N240			200 MHz		Not Qualified	9663676416 bit				.09 Amp		.6 ns
NANDA9R4N0CZBA5E	Micron Technology	MEMORY CIRCUIT	OTHER	149	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL					1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
MT4C4001JXWM2-8	Micron Technology
MT28C128532W18DFW-F706P70KTBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT9HTF6472FY-53EB3D1	Micron Technology		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			67108864 words	COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	R-PDMA-N240			266 MHz		Not Qualified	4831838208 bit
MT28C128564W30EBW-F705P706BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
PF38F4060M0Y0B0	Micron Technology	MEMORY CIRCUIT		105	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL					1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm							BOTTOM	R-PBGA-B105					Not Qualified					.00013 Amp		96 ns
MT28C128564W18EFW-F605P706BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28F008B5SG7T	Micron Technology
MT28C256564W18TBT-F606P706BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm		9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1		12 mm
MT5C512K8B2TG20XT	Micron Technology
MT28C128564W18EFW-F606P856BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128532W18DBW-F605P70TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
RD38F1030W0YCQ0	Micron Technology	MEMORY CIRCUIT		88	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm							BOTTOM	R-PBGA-B88					Not Qualified					.00011 Amp		70 ns
MT28C128564W18EBW-F705P856KTBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
M36W0R6050U4ZSE	Micron Technology	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,6X10,20	Other Memory ICs	.5 mm	85 Cel		4MX16	4M	-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	1.95 V	1.2 mm		4 mm	Not Qualified	67108864 bit	1.7 V	IT ALSO HAVING 32-MBIT PSRAM	e1		6 mm	70 ns
MT28C128564W30DBW-F705P70KBTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT5C128K8A1S13ADC1-20	Micron Technology
M36W0R6040U4ZSE	Micron Technology	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,6X10,20	Other Memory ICs	.5 mm	85 Cel		4MX16	4M	-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	1.95 V	1.2 mm		4 mm	Not Qualified	67108864 bit	1.7 V	IT ALSO HAVING 16-MBIT PSRAM	e1		6 mm	70 ns
NAND99R3M2CZBB5E	Micron Technology	MEMORY CIRCUIT	OTHER	107	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL					1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel		BOTTOM	R-PBGA-B107					Not Qualified
NANDA9W4N1CZBC5F	Micron Technology	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL						FLASH+SDRAM	2.5/3.6		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel		BOTTOM	R-PBGA-B137					Not Qualified
NANDB0R3N0CZQA5F	Micron Technology	MEMORY CIRCUIT	OTHER	152	FBGA		SQUARE	PLASTIC/EPOXY	YES			BALL					1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.635 mm	85 Cel				-30 Cel		BOTTOM	S-PBGA-B152					Not Qualified

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.