Micron Technology Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Data Polling
MT4C4256EZ8	Micron Technology
EBE51ED8ABFA-4C-E	Micron Technology		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				2700 mA	67108864 words	COMMON	1.8			1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	64MX72	64M	0 Cel				DUAL	R-PDMA-N240				200 MHz		Not Qualified		4831838208 bit								.072 Amp			.6 ns
MT28C64464W18ABW-F706P85KBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words		1.8	FLASH+SRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77		1.95 V	1.2 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 4M X 16		e1		260		.000145 Amp	10 mm		85 ns
CT064M4SSD1CCA	Micron Technology	MEMORY CIRCUIT																																																NOT SPECIFIED	NOT SPECIFIED
MT28C256532W18DFT-F705P70TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			8388608 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B88		1.95 V	1.4 mm		9 mm	Not Qualified		134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH		e1					12 mm
MT5C2564EC30XT	Micron Technology
MT28C128516W18DBW-F606P70KBTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77		1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT28C64432W30AFW-F705P85BWTES	Micron Technology	MEMORY CIRCUIT	OTHER	77	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL								FLASH+SRAM		1.8,3		GRID ARRAY, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel				BOTTOM	R-PBGA-B77	1					Not Qualified										.000135 Amp			85 ns
MT2LSYT3272T2G12LP	Micron Technology
MT28C64464W18ABW-F705P70KBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words		1.8	FLASH+SRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77		1.95 V	1.2 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 4M X 16		e1		260		.000145 Amp	10 mm		70 ns
M36L0R7060L3ZSE	Micron Technology	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			8388608 words		1.8				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		6 mm	Not Qualified		134217728 bit	1.7 V			e1					8 mm
MT28C128532W18EBW-F606P856TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77		1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT5C2568XDM2-25	Micron Technology
MT18HTF25672FDY-667G1N8	Micron Technology		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					268435456 words	COMMON				1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel				DUAL	R-PDMA-N240				266 MHz		Not Qualified		19327352832 bit
NANDB0R3N0BZQA5F	Micron Technology	MEMORY CIRCUIT	OTHER	152	FBGA		SQUARE	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.635 mm	85 Cel				-30 Cel				BOTTOM	S-PBGA-B152						Not Qualified
MT4LSY6472T6G7LP	Micron Technology
PF38F4040L0YUQ0	Micron Technology	MEMORY CIRCUIT		88	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL				35 mA			1.8	FLASH+PSRAM		1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm									BOTTOM	R-PBGA-B88						Not Qualified										.00011 Amp			85 ns
NANDA9R3N0AZBB5E	Micron Technology	MEMORY CIRCUIT	OTHER	107	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel				BOTTOM	R-PBGA-B107						Not Qualified
MT28C128516W18DBW-F705P70KBBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77		1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT28F322D18FH-11BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words		1.8		NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA58,8X13,30	Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B58		1.95 V	1.2 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V		4	e0			NOR TYPE	.000001 Amp	12 mm	YES	110 ns	NO
MT9JBF12872PIY-80BD1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				3150 mA	134217728 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel				DUAL	R-PDMA-N240				400 MHz		Not Qualified		9663676416 bit								.09 Amp
MT28C256532W18DFT-F70P70TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			8388608 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B88		1.95 V	1.4 mm		9 mm	Not Qualified		134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH		e1					12 mm
MT42C8254RG-8	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING				170 mA	262144 words		5			5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Other Memory ICs	.8 mm	70 Cel		256KX8	256K	0 Cel			Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40						Not Qualified		2097152 bit				e0				.01 Amp			80 ns
MT18LD172G6C	Micron Technology
MT28C256532W18TFT-F705P856TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			8388608 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B88		1.95 V	1.4 mm		9 mm	Not Qualified		134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH		e1					12 mm
MT36HVS25672PY-53EE1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				4266 mA	268435456 words	COMMON	1.8			1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	256MX72	256M	0 Cel				DUAL	R-PDMA-N240				267 MHz		Not Qualified		19327352832 bit											.5 ns
NANDCBR4N3BZCC5E	Micron Technology	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel				BOTTOM	R-PBGA-B137						Not Qualified
MT28C128516W18DFW-F70P85KTTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN LEAD SILVER	BOTTOM	R-PBGA-B77		1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e0					10 mm
MT28C256532W18SFT-F60P70BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			8388608 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B88		1.95 V	1.4 mm		9 mm	Not Qualified		134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH		e1					12 mm
MT28C128532W18EFW-F706P856KTTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77		1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT58C1289XDC2-17	Micron Technology
NANDDBR3N5AZCC5E	Micron Technology	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel				BOTTOM	R-PBGA-B137						Not Qualified
MT28C128532W30DFW-F70P85BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77		1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT28C64432W30ABW-F705P70BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words			FLASH+SRAM		1.8,2.5/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77		1.95 V	1.2 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 2M X 16		e1		260		.000135 Amp	10 mm		70 ns
MT9VDDT1672Y-265	Micron Technology		COMMERCIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				2925 mA	16777216 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel				DUAL	R-PDMA-N184				133 MHz		Not Qualified		1207959552 bit								.027 Amp			.75 ns
NAND98W3M1BZBC5F	Micron Technology	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL							3	FLASH+SDRAM		3		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel				BOTTOM	R-PBGA-B137						Not Qualified
NAND98W3M0AZBB5E	Micron Technology	MEMORY CIRCUIT	OTHER	107	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL							3	FLASH+SDRAM		3		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel				BOTTOM	R-PBGA-B107						Not Qualified
NANDA9R3N0BZPC5E	Micron Technology	MEMORY CIRCUIT	OTHER	128	FBGA		SQUARE	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.635 mm	85 Cel				-30 Cel				BOTTOM	S-PBGA-B128						Not Qualified
NANDBAR3N6AZPC5F	Micron Technology	MEMORY CIRCUIT	OTHER	128	FBGA		SQUARE	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.635 mm	85 Cel				-30 Cel				BOTTOM	S-PBGA-B128						Not Qualified
CT250MX200SSD4	Micron Technology	MEMORY CIRCUIT																																																NOT SPECIFIED	NOT SPECIFIED
MT28C256532W18DFT-F70P85TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			8388608 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B88		1.95 V	1.4 mm		9 mm	Not Qualified		134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH		e1					12 mm
NANDA9R3N6AZBB5F	Micron Technology	MEMORY CIRCUIT	OTHER	107	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel				BOTTOM	R-PBGA-B107						Not Qualified
NANDB9R3N0DZPC5F	Micron Technology	MEMORY CIRCUIT	OTHER	128	FBGA		SQUARE	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.635 mm	85 Cel				-30 Cel				BOTTOM	S-PBGA-B128						Not Qualified
MT4C1664LZ10	Micron Technology
MT5C2516XDM2-20	Micron Technology
RD38F4055L0ZTQ0	Micron Technology	MEMORY CIRCUIT		88	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL				35 mA			1.8	FLASH+PSRAM		1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm									BOTTOM	R-PBGA-B88						Not Qualified													88 ns
NANDA9R3N3CZBC5E	Micron Technology	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel				BOTTOM	R-PBGA-B137						Not Qualified
MT28C128516W18DFW-F60P70KTTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN LEAD SILVER	BOTTOM	R-PBGA-B77		1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e0					10 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.