Micron Technology Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT28C128532W30EFW-F705P856BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1				10 mm
MT18HVS51272PKY-667A1	Micron Technology		COMMERCIAL	244	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD		3177 mA	536870912 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	R-PDMA-N244			333 MHz		Not Qualified	38654705664 bit						.144 Amp		.45 ns
NANDA9R4N1CZBC5F	Micron Technology	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES				BALL					1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel		BOTTOM	R-PBGA-B137					Not Qualified
MT8LSFT32128H-13EXX	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words		3.3			16	MICROELECTRONIC ASSEMBLY				70 Cel		64MX16	64M	0 Cel		DUAL	R-XDMA-N144	3.6 V				Not Qualified	1073741824 bit	3 V	FLASH MEMORY IS ORGANISED AS 4M X 64
NANDA9R3N0DZBB5F	Micron Technology	MEMORY CIRCUIT	OTHER	107	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES				BALL					1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel		BOTTOM	R-PBGA-B107					Not Qualified
MT28C128564W18EFW-F606P856BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1				10 mm
MT5C1008XDC3-15	Micron Technology
MT28C128564W30DFW-F70P85KBTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1				10 mm
MT28C256532W18TBT-F606P856TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm		9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT8S6432Z12LP	Micron Technology
PF38F2040W0YTQ0	Micron Technology	MEMORY CIRCUIT		88	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL		35 mA			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm							BOTTOM	R-PBGA-B88					Not Qualified							.00011 Amp		70 ns
MT28C64416W18AFW-F60BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16	e1				10 mm
MT52C9010CW45/883C	Micron Technology
PF38F4044L0YUQ0	Micron Technology	MEMORY CIRCUIT		88	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES				BALL		35 mA			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm							BOTTOM	R-PBGA-B88					Not Qualified							.00011 Amp		85 ns
PF38F1030W0YUQ0	Micron Technology	MEMORY CIRCUIT		88	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL		35 mA			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm							BOTTOM	R-PBGA-B88					Not Qualified							.00011 Amp		70 ns
MT48LC4M16B4TG8E	Micron Technology
MT18LDT472G7C	Micron Technology
MT42C4064C-15/883C	Micron Technology	MEMORY CIRCUIT	MILITARY	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		90 mA	65536 words		5		5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	125 Cel		64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24					Not Qualified	262144 bit			e0			.006 Amp		150 ns
MT28C256564W18DBT-F706P70TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm		9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
NANDBAR4N2BZBA5F	Micron Technology	MEMORY CIRCUIT	OTHER	149	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES				BALL					1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
MT28C256532W18SFT-F606P85BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm		9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C128564W30DBW-F70P85BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1				10 mm
MT28C128532W18DFW-F605P85KTTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1				10 mm
MT8LSFT3264RH-13EXX	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words		3.3			16	MICROELECTRONIC ASSEMBLY				70 Cel		32MX16	32M	0 Cel		DUAL	R-XDMA-N144	3.6 V				Not Qualified	536870912 bit	3 V	FLASH MEMORY IS ORGANISED AS 4M X 64
MT5C2568C35EXT	Micron Technology
M36L0R8060U3ZAMF	Micron Technology	MEMORY CIRCUIT	OTHER	88	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.2 mm		8 mm	Not Qualified	268435456 bit	1.7 V		e1				10 mm
MT28C128516W18DFW-F705P85TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e0				10 mm
MT28C128532W30DBW-F706P70KTTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1				10 mm
MT28C128532W18EFW-F606P856BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1				10 mm
MT28C256532W18TBT-F606P706BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm		9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MTFC32GLTDI-WT	Micron Technology		OTHER	169	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES				BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA169,14X28,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B169					Not Qualified	274877906944 bit
NANDB9R4N0AZBA5F	Micron Technology	MEMORY CIRCUIT	OTHER	149	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES				BALL					1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
M39P0R8070E2ZADE	Micron Technology	MEMORY CIRCUIT	OTHER	105	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES				BALL					1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B105					Not Qualified									96 ns
MT28C128564W18EBW-F605P706TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1				10 mm
NANDA8R3N0CZPA5F	Micron Technology	MEMORY CIRCUIT	OTHER	152	FBGA		SQUARE	PLASTIC/EPOXY	YES				BALL					1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.635 mm	85 Cel				-30 Cel		BOTTOM	S-PBGA-B152					Not Qualified
MT28C128564W30DFW-F706P70BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1				10 mm
MT28C256532W18SFT-F60P85TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm		9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT52C9005CW20XT	Micron Technology
NANDB9R4N0DZBA5F	Micron Technology	MEMORY CIRCUIT	OTHER	149	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES				BALL					1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
MT28C128516W18DFW-F605P85BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e0				10 mm
MT28C128564W18DBW-F606P70BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1				10 mm
MT28C64416W18AFW-F705P70BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words		1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 1M X 16	e0			.000115 Amp	10 mm	70 ns
MT28C64432W18ABW-F606P70KBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words		1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 2M X 16	e1		260	.000135 Amp	10 mm	70 ns
MT28C64432W18AFW-F706P70BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words		1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 2M X 16	e0			.000135 Amp	10 mm	70 ns
MTFDHAL1T6TCU-1AR18ABYY	Micron Technology	MEMORY CIRCUIT																																									NOT SPECIFIED	NOT SPECIFIED
MT43C8128EJ-12	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ		SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND		160 mA	131072 words		5		5	8	CHIP CARRIER	LDCC52,.8SQ	Other Memory ICs	1.27 mm	70 Cel		128KX8	128K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-PQCC-J52					Not Qualified	1048576 bit			e0			.001 Amp		120 ns
RD38F2240WWYDQ0	Micron Technology	MEMORY CIRCUIT	OTHER	88	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL		55 mA				FLASH+PSRAM	1.8,3		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B88					Not Qualified							.000005 Amp
MT42C4064C15XT	Micron Technology

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.