Micron Technology Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Data Polling
NANDA9R3N0DZQA5E	Micron Technology	MEMORY CIRCUIT	OTHER	152	FBGA		SQUARE	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.635 mm	85 Cel				-30 Cel				BOTTOM	S-PBGA-B152					Not Qualified
MT4C16M1B1DJ8	Micron Technology
MT28C3214P2FL-11B	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		95 mA	2097152 words			FLASH+SRAM		1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel		2MX16	2M	0 Cel			TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified		33554432 bit	1.65 V	ALSO CONTAINS 256K X 16 SRAM		e0				.000001 Amp	12 mm		110 ns
MT28C128532W30DBW-F705P85KBBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT28C64416W18AFW-F60P70KBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words		1.8	FLASH+SRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel			Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 1M X 16		e0				.000115 Amp	10 mm		70 ns
MT28C128564W30DBW-F70P85TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT28C128532W18DBW-F60P85TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
RD38F4050L0ZTQ1	Micron Technology	MEMORY CIRCUIT		88	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL				35 mA			1.8	FLASH+PSRAM		1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm									BOTTOM	R-PBGA-B88					Not Qualified													88 ns
NANDB9R4N2DZBA5F	Micron Technology	MEMORY CIRCUIT	OTHER	149	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel				BOTTOM	R-PBGA-B149					Not Qualified
PF38F3060M0Y0V0	Micron Technology	MEMORY CIRCUIT		165	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+PSRAM		1.8		GRID ARRAY, FINE PITCH	BGA165,12X15,25	Other Memory ICs	.635 mm									BOTTOM	R-PBGA-B165					Not Qualified										.000115 Amp			96 ns
MT28C128532W18DFW-F70P70KTTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
M36W0R6040U4ZAMF	Micron Technology	MEMORY CIRCUIT	OTHER	88	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL							1.8	FLASH+PSRAM		1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel				BOTTOM	R-PBGA-B88					Not Qualified													70 ns
MT9JSF12872PIY-80CB1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				3960 mA	134217728 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel				DUAL	R-PDMA-N240			400 MHz		Not Qualified		9663676416 bit								.09 Amp
MT28C128564W30EBW-F705P706BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT28C128532W30EFW-F705P856KBBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT5C2561S12DWC2-20	Micron Technology
MT5C1608-45	Micron Technology
RD38F2040W0ZTQ1	Micron Technology	MEMORY CIRCUIT	OTHER	88	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL				55 mA				FLASH+PSRAM		1.8,3		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel				BOTTOM	R-PBGA-B88					Not Qualified										.000005 Amp
MT28C64432W30AFW-F70P70BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words			FLASH+SRAM		1.8,2.5/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel			Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 2M X 16		e0				.000135 Amp	10 mm		70 ns
MT28C64464W18ABW-F60P85KBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words		1.8	FLASH+SRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 4M X 16		e1		260		.000145 Amp	10 mm		85 ns
MT4C8512D18AWC1-7	Micron Technology
MT2LSYT3264T4G7LP	Micron Technology
NANDCBR4N3AZCC5F	Micron Technology	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel				BOTTOM	R-PBGA-B137					Not Qualified
MT48LC16M4B4TG10	Micron Technology
MT5C2561S12DWC2-10	Micron Technology
MT28C128532W18DBW-F606P85KBTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT28C256564W18DBT-F606P85BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			8388608 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm		9 mm	Not Qualified		134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH		e1					12 mm
MT9HVF6472Y-667	Micron Technology		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				2160 mA	67108864 words	COMMON	1.8			1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	64MX72	64M	0 Cel				DUAL	R-PDMA-N240			333 MHz		Not Qualified		4831838208 bit								.063 Amp			.45 ns
MT9HTF6472AY-40E	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				2070 mA	67108864 words	COMMON	1.8			1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	55 Cel	3-STATE	64MX72	64M	0 Cel				DUAL	R-PDMA-N240			200 MHz		Not Qualified		4831838208 bit								.045 Amp			.6 ns
MT4C16M1A1C10/883C	Micron Technology
MT28C64432W30ABW-F705P85BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words			FLASH+SRAM		1.8,2.5/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 2M X 16		e1		260		.000135 Amp	10 mm		85 ns
MT28C64464W18ABW-F605P85TWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words		1.8	FLASH+SRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 4M X 16		e1		260		.000145 Amp	10 mm		85 ns
MT28C64464W18ABW-F60P70BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words		1.8	FLASH+SRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 4M X 16		e1		260		.000145 Amp	10 mm		70 ns
MT5LC64K16D4S13AWC2-25	Micron Technology
MT28C128516W30DBW-F70P85BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT5C2568XDM2-35	Micron Technology
MT18HTF6472FY-667	Micron Technology		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					67108864 words	COMMON				1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	64MX72	64M	0 Cel				DUAL	R-PDMA-N240			333 MHz		Not Qualified		4831838208 bit
MT28C128564W18DFW-F705P70TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words		1.8	FLASH+SRAM		1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel			Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1				.00015 Amp	10 mm		70 ns
MT28C128532W18DFW-F706P70TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT28C128532W18DFW-F70P85KBTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT58C1289S11AWC1-16	Micron Technology
MT28F322D18FH-10BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words		1.8		NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA58,8X13,30	Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B58	1.95 V	1.2 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V		4	e0			NOR TYPE	.000001 Amp	12 mm	YES	100 ns	NO
MT5C1M4B2TG15AT	Micron Technology
MTFDHAL6T4TCU-1AR1ZABYY	Micron Technology	MEMORY CIRCUIT																																															NOT SPECIFIED	NOT SPECIFIED
PF38F3044L0YBQ0	Micron Technology	MEMORY CIRCUIT		88	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL				35 mA			1.8	FLASH+PSRAM		1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm									BOTTOM	R-PBGA-B88					Not Qualified										.00011 Amp			85 ns
MT28C128516W18DBW-F60P85TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT18HTF12872FY-53E	Micron Technology		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					134217728 words	COMMON				1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	0 Cel				DUAL	R-PDMA-N240			266 MHz		Not Qualified		9663676416 bit
RD38F2030W0YBQ2	Micron Technology	MEMORY CIRCUIT	OTHER	88	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL				55 mA				FLASH+PSRAM		1.8,3		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel				BOTTOM	R-PBGA-B88					Not Qualified										.000005 Amp

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.