Micron Technology Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Data Polling
MT5LC2564S12DDC1-20	Micron Technology
MT28C64464W30ABW-F70KTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16		e1					10 mm
NANDA0R3N0DZQA5E	Micron Technology	MEMORY CIRCUIT	OTHER	152	FBGA		SQUARE	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.635 mm	85 Cel				-30 Cel				BOTTOM	S-PBGA-B152					Not Qualified
NANDA9R4N2AZBA5E	Micron Technology	MEMORY CIRCUIT	OTHER	149	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel				BOTTOM	R-PBGA-B149					Not Qualified
MT4C4001JXDM3-10	Micron Technology
MT28C128564W30DFW-F705P85BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words		1.8	FLASH+SRAM		1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel			Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1				.00015 Amp	10 mm		85 ns
MT5C1001S01AWX2-45	Micron Technology
MT28C3214P2FL-10TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words		1.8				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified		33554432 bit	1.65 V	SRAM ORGANISATION IS 256K X 16		e1					12 mm
MT9JBF12872PY-1G3D1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				4410 mA	134217728 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	128MX72	128M	0 Cel				DUAL	R-PDMA-N240			667 MHz		Not Qualified		9663676416 bit								.09 Amp
MT28C128564W18DBW-F606P70TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT28C128516W30DBW-F70P85KTTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
NANDB0R3N0DZPA5E	Micron Technology	MEMORY CIRCUIT	OTHER	152	FBGA		SQUARE	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.635 mm	85 Cel				-30 Cel				BOTTOM	S-PBGA-B152					Not Qualified
MT28C64416W18AFW-F605P70KTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words		1.8	FLASH+SRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel			Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 1M X 16		e0				.000115 Amp	10 mm		70 ns
PF38F3040L0YFQ0	Micron Technology	MEMORY CIRCUIT		88	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL				35 mA			1.8	FLASH+PSRAM		1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm									BOTTOM	R-PBGA-B88					Not Qualified										.00011 Amp			85 ns
MT28C128564W18DFW-F706P85KTBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT28C128532W18EBW-F706P706TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT28C128532W18EFW-F705P856KBTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT28C256564W18SBT-F606P70TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			8388608 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm		9 mm	Not Qualified		134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH		e1					12 mm
MT5C1005EC20L	Micron Technology
MT28C128564W18DBW-F60P85TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT9VDDT1672IG-262	Micron Technology		INDUSTRIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				2970 mA	16777216 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	16MX72	16M	-40 Cel				DUAL	R-PDMA-N184			133 MHz		Not Qualified		1207959552 bit								.027 Amp			.75 ns
MT9VDDF3272Y-40B	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					33554432 words	COMMON	2.6			2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel				DUAL	R-PDMA-N184			200 MHz		Not Qualified		2415919104 bit								.036 Amp			.7 ns
MT5C512K8B2DJ25XT	Micron Technology
MT28C256564W18DBT-F706P85BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			8388608 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm		9 mm	Not Qualified		134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH		e1					12 mm
MT5C256K16B2DJ12AT	Micron Technology
MT5LC2565S12CDC1-15	Micron Technology
NANDBAR4N7AZBC5E	Micron Technology	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel				BOTTOM	R-PBGA-B137					Not Qualified
MT4LSY6472T1G12LP	Micron Technology
MT58LC64K18A6S22AWC2-7	Micron Technology
EBJ20RE4BAFA-AG-E	Micron Technology		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					268435456 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel				DUAL	R-PDMA-N240			533 MHz		Not Qualified		19327352832 bit											.3 ns
MT28C128564W18EBW-F606P706KTBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT36HTJ25672Y-40E	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				5940 mA	268435456 words	COMMON	1.8			1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	55 Cel	3-STATE	256MX72	256M	0 Cel				DUAL	R-PDMA-N240			200 MHz		Not Qualified		19327352832 bit						260					.6 ns
MT5LC1008S18AWC2-15	Micron Technology
CT128M4SSD1	Micron Technology	MEMORY CIRCUIT																																															NOT SPECIFIED	NOT SPECIFIED
NAND99W3M0CZBB5E	Micron Technology	MEMORY CIRCUIT	OTHER	107	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL							3	FLASH+SDRAM		3		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel				BOTTOM	R-PBGA-B107					Not Qualified
MT28C128516W18DFW-F60P70KBTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN LEAD SILVER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e0					10 mm
MT28F322D18FH-103BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words		1.8		NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA58,8X13,30	Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B58	1.95 V	1.2 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V		4	e0			NOR TYPE	.000001 Amp	12 mm	YES	100 ns	NO
MT28C256564W18TBT-F605P706TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			8388608 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm		9 mm	Not Qualified		134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH		e1					12 mm
MT28C128516W30DFW-F705P85TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN LEAD SILVER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e0					10 mm
MT58C1289S11AWC1-20	Micron Technology
NAND99R3M1BZBC5E	Micron Technology	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel				BOTTOM	R-PBGA-B137					Not Qualified
NANDBAR3N6CZPC5E	Micron Technology	MEMORY CIRCUIT	OTHER	128	FBGA		SQUARE	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.635 mm	85 Cel				-30 Cel				BOTTOM	S-PBGA-B128					Not Qualified
NANDC9R4N0BZBA5F	Micron Technology	MEMORY CIRCUIT	OTHER	149	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL							1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel				BOTTOM	R-PBGA-B149					Not Qualified
MT18VDDS6472PHG-202	Micron Technology		COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				3690 mA	67108864 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	64MX72	64M	0 Cel				DUAL	R-PDMA-N200			125 MHz		Not Qualified		4831838208 bit								.072 Amp			.8 ns
RD38F4062L0YTB0	Micron Technology	MEMORY CIRCUIT		103	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES			BALL				80 mA			1.8	FLASH+SDRAM		1.8		GRID ARRAY, FINE PITCH	BGA103,9X12,32	Other Memory ICs	.8 mm									BOTTOM	R-PBGA-B103					Not Qualified										.00002 Amp			70 ns
MT28C128532W30DFW-F70P70BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words						16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH		e1					10 mm
MT28C64432W18AFW-F706P85TWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			4194304 words		1.8	FLASH+SRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel			Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified		67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 2M X 16		e0				.000135 Amp	10 mm		85 ns
MT18VDVF6472DY-335	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					67108864 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel				DUAL	R-PDMA-N184			167 MHz		Not Qualified		4831838208 bit								.072 Amp			.7 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.