Micron Technology Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT4C4256LC10	Micron Technology
MT9JSF25672PY-1G3B1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD		4140 mA	268435456 words	COMMON	1.5		1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	R-PDMA-N240			667 MHz		Not Qualified	19327352832 bit					.09 Amp
PF38F5070M0Y1B0	Micron Technology	MEMORY CIRCUIT		105	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES				BALL					1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm							BOTTOM	R-PBGA-B105					Not Qualified						.00016 Amp		96 ns
MT58C1616XDM2-20	Micron Technology
MT2LSYT3272T2G10LP	Micron Technology
MT28C64464W30ABW-F705P85BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words			FLASH+SRAM	1.8,2.5/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 4M X 16	e1	260	.000145 Amp	10 mm	85 ns
MT5C64K16A1S13ADC2-12	Micron Technology
MT28C256564W18SBT-F60P70TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm		9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1			12 mm
MT5C2568CW70E/883C	Micron Technology
PF38F6070M0Y0V0	Micron Technology	MEMORY CIRCUIT		165	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES				BALL					1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA165,12X15,25	Other Memory ICs	.635 mm							BOTTOM	R-PBGA-B165					Not Qualified						.000185 Amp		96 ns
MT28C128532W30DFW-F706P70TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1			10 mm
MT28C256564W18SFT-F605P70TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm		9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1			12 mm
NANDA8R3N0AZQA5E	Micron Technology	MEMORY CIRCUIT	OTHER	152	FBGA		SQUARE	PLASTIC/EPOXY	YES				BALL					1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.635 mm	85 Cel				-30 Cel		BOTTOM	S-PBGA-B152					Not Qualified
PF38F3060M0Y0B0	Micron Technology	MEMORY CIRCUIT		105	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES				BALL					1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm							BOTTOM	R-PBGA-B105					Not Qualified						.000115 Amp		96 ns
MT28C128564W18DBW-F70P70KBTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1			10 mm
M36W0R6050T3ZAQF	Micron Technology	MEMORY CIRCUIT	OTHER	88	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words		1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 2M X 16	e1		.00011 Amp	10 mm	70 ns
MT28C64416W30ABW-F705P85KTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words			FLASH+SRAM	1.8,2.5/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 1M X 16	e1	260	.000115 Amp	10 mm	85 ns
MT28C128532W18EFW-F705P856KTBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1			10 mm
MT28C64416W18ABW-F70BWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16	e1			10 mm
MT36HVS25672Y-53EE1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD		4266 mA	268435456 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	R-PDMA-N240			267 MHz		Not Qualified	19327352832 bit							.5 ns
MT18VDDF6472DY-335	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD			67108864 words	COMMON	2.5		2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	R-PDMA-N184			166 MHz		Not Qualified	4831838208 bit					.072 Amp		.7 ns
MT28C128564W30EFW-F705P706BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1			10 mm
MT28C128564W30DBW-F706P70TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1			10 mm
MT28C128564W18EBW-F706P706TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1			10 mm
MT42C4064C-10/883C	Micron Technology	MEMORY CIRCUIT	MILITARY	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		90 mA	65536 words		5		5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	125 Cel		64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24					Not Qualified	262144 bit			e0		.006 Amp		100 ns
MT28C256532W18DBT-F70P70BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm		9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1			12 mm
RD38F2040W0YCQ0	Micron Technology	MEMORY CIRCUIT		88	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID		BALL		35 mA			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm							BOTTOM	R-PBGA-B88					Not Qualified						.00011 Amp		70 ns
MT72HTS2G72PY-53EA1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD		5832 mA	2147483648 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	2GX72	2G	0 Cel		DUAL	R-PDMA-N240			266 MHz		Not Qualified	154618822656 bit					.576 Amp		.5 ns
MT5C1008XWM3-20P	Micron Technology
NANDA8R3N0DZQA5E	Micron Technology	MEMORY CIRCUIT	OTHER	152	FBGA		SQUARE	PLASTIC/EPOXY	YES				BALL					1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.635 mm	85 Cel				-30 Cel		BOTTOM	S-PBGA-B152					Not Qualified
MT28C128516W18DBW-F705P85BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1			10 mm
MT28C128516W18DBW-F70P70BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1			10 mm
MT5C2568XWC1-35P	Micron Technology
MT18VDVF6472DG-262	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD			67108864 words	COMMON	2.5		2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	R-PDMA-N184			133 MHz		Not Qualified	4831838208 bit					.072 Amp		.75 ns
MT5C6408C45	Micron Technology
MT5C1008C25E	Micron Technology
MT5C2568XWM1-45P	Micron Technology
MT28C128564W30EFW-F705P706TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1			10 mm
MT2LSYT3272C4G5	Micron Technology
MT5C1189S11AWC1	Micron Technology
EBJ10RE8BAFT-DJ-E	Micron Technology		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD		3500 mA	134217728 words	COMMON	1.5		1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	R-PDMA-N240			667 MHz		Not Qualified	9663676416 bit					.88 Amp
MT58C1616XWM2-25	Micron Technology
MT28C64416W18AFW-F706P70TWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words		1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 1M X 16	e0		.000115 Amp	10 mm	70 ns
MT5C1001S01AWX2-25	Micron Technology
NP8P128AE3BSM60E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	56	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		3			8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		16MX8	16M	-40 Cel		DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm		134217728 bit	2.7 V					18.4 mm
NANDA9R4N3CZBC5F	Micron Technology	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES				BALL					1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel		BOTTOM	R-PBGA-B137					Not Qualified
MT28C128564W30DFW-F706P70KBTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1			10 mm
MT28C128516W18DBW-F605P85KBBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1			10 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.