STMicroelectronics Other Function Memory ICs 2,067

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Interleaved Burst Length Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

NAND01GW4M3AZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M28F201-200XN6R

STMicroelectronics

M36W832B85ZA1

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

66

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

2097152 words

3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

70 Cel

2MX16

2M

0 Cel

BOTTOM

R-PBGA-B66

3.3 V

1.4 mm

8 mm

Not Qualified

33554432 bit

2.7 V

ALSO CONTAINS 512K X 16 SRAM

12 mm

M39432-12VNC5

STMicroelectronics

MEMORY CIRCUIT

OTHER

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

20 mA

3.3

EEPROM+FLASH

3.3

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Other Memory ICs

.5 mm

85 Cel

-20 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

e0

.000002 Amp

120 ns

NAND256R4M5CZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND512R4M5BZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND01GW4M0CZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA107,10X14,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B107

Not Qualified

IMSB404-8

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

16

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

THROUGH-HOLE

SYNCHRONOUS

2097152 words

5

8

MICROELECTRONIC ASSEMBLY

50 Cel

2MX8

2M

0 Cel

UNSPECIFIED

R-XXMA-T16

5.25 V

Not Qualified

16777216 bit

4.75 V

SRAM IS CONFIGURED AS 32 K X 8

M36L0T7050B0ZAQT

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

30 mA

8388608 words

FLASH+PSRAM

1.8,3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

8MX16

8M

-25 Cel

TIN LEAD

BOTTOM

R-PBGA-B88

1.95 V

1.2 mm

8 mm

Not Qualified

134217728 bit

1.7 V

PSRAM IS ORGANIZED AS 2M X 16

e0

.000005 Amp

10 mm

90 ns

NAND512R4M2CZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

M36W432TG85ZA1T

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

66

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

20 mA

2097152 words

3

FLASH+SRAM

3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA66,8X12,32

Other Memory ICs

.8 mm

70 Cel

2MX16

2M

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B66

3.3 V

1.4 mm

8 mm

Not Qualified

33554432 bit

2.7 V

STATIC RAM ORGANISED AS 256K X 16

e0

.00001 Amp

12 mm

85 ns

TS27C64MQ30

STMicroelectronics

M36W108AB120ZN1T

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

48

VLGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BUTT

ASYNCHRONOUS

40 mA

1048576 words

FLASH+SRAM

3/3.3

8

GRID ARRAY, VERY THIN PROFILE

LGA48,6X8,40

Other Memory ICs

1 mm

70 Cel

1MX8

1M

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B48

3.6 V

1 mm

9.8 mm

Not Qualified

8388608 bit

2.7 V

ALSO CONTAINS 128K X 8 SRAM

e0

11.8 mm

120 ns

NAND512R3M0AZBE

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

67108864 words

1.8

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

64MX8

64M

-30 Cel

BOTTOM

R-PBGA-B107

1.95 V

1.2 mm

10.5 mm

Not Qualified

536870912 bit

1.7 V

40

260

13 mm

NAND512W4M2CZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

MK48C02N25

STMicroelectronics

TS27C1024VFN25

STMicroelectronics

M36L0R7060B1ZAQF

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

R-PBGA-B88

1.95 V

1.2 mm

8 mm

Not Qualified

134217728 bit

1.7 V

PSRAM IS ORGANIZED AS 4M X 16

40

260

10 mm

NAND01GW3M2BZB5F

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

137

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

134217728 words

3

FLASH+SDRAM

3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

128MX8

128M

-30 Cel

BOTTOM

R-PBGA-B137

3.6 V

1.2 mm

10.5 mm

Not Qualified

1073741824 bit

2.5 V

LPSDRAM IS ORGANISED AS 16M X 32

40

260

13 mm

TS27C1024CFN25

STMicroelectronics

M24128BN

STMicroelectronics

NAND256R4M2AZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

NAND256R3M2CZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

ST23ZL18

STMicroelectronics

MEMORY CIRCUIT

NAND512W3M2BZC5E

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

137

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

33554432 words

3

FLASH+SDRAM

3

8

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

32MX8

32M

-30 Cel

BOTTOM

R-PBGA-B137

3.6 V

1.4 mm

10.5 mm

Not Qualified

268435456 bit

2.5 V

LPSDRAM IS ORGANISED AS 16M X 32

40

260

13 mm

M36W108T100ZN1

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

48

VLGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BUTT

ASYNCHRONOUS

100 mA

1048576 words

FLASH+SRAM

3/3.3

8

GRID ARRAY, VERY THIN PROFILE

LGA48,6X8,40

Other Memory ICs

1 mm

70 Cel

1MX8

1M

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B48

3.6 V

1 mm

9.8 mm

Not Qualified

8388608 bit

2.7 V

ALSO CONTAINS 128K X 8 SRAM

e0

.00002 Amp

11.8 mm

100 ns

NAND512R4M0AZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA107,10X14,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B107

Not Qualified

NAND512W4M4AZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

TS27C1024CFN12

STMicroelectronics

M28F221-90YN6

STMicroelectronics

NAND512W4M4CZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M36L0T7060B2ZAQF

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

FLASH+PSRAM

1.8,3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

R-PBGA-B88

2 V

1.2 mm

8 mm

Not Qualified

134217728 bit

1.7 V

PSRAM IS ORGANIZED AS 4M X 16

40

260

10 mm

85 ns

M36W216B100ZA6T

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

66

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

85 Cel

1MX16

1M

-40 Cel

BOTTOM

R-PBGA-B66

3.3 V

1.4 mm

8 mm

Not Qualified

16777216 bit

2.7 V

ALSO CONTAINS 128K X 16 SRAM

12 mm

M36W0R6050B0ZAQT

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

45 mA

4194304 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

4MX16

4M

-30 Cel

TIN LEAD

BOTTOM

R-PBGA-B88

1.95 V

1.2 mm

8 mm

Not Qualified

67108864 bit

1.7 V

PSRAM IS ORGANIZED AS 2M X 16

e0

.0001 Amp

10 mm

85 ns

NAND256R4M3CZB5E

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

149

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

16MX16

16M

-30 Cel

BOTTOM

R-PBGA-B149

1.95 V

1.2 mm

10 mm

Not Qualified

268435456 bit

1.7 V

LPSDRAM IS ORGANISED AS 16M X 16

40

260

13.5 mm

MK41L68N25

STMicroelectronics

NAND256W3M4BZB5E

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

149

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

16777216 words

3

FLASH+SDRAM

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

16MX16

16M

-30 Cel

BOTTOM

R-PBGA-B149

3.6 V

1.2 mm

10 mm

Not Qualified

268435456 bit

2.5 V

LPSDRAM IS ORGANISED AS 16M X 16

40

260

13.5 mm

M36W832BE100ZA1T

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

66

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

35 mA

2097152 words

3

FLASH+SRAM

3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA66,8X12,32

Other Memory ICs

.8 mm

70 Cel

2MX16

2M

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B66

3.3 V

1.4 mm

8 mm

Not Qualified

33554432 bit

2.7 V

ALSO CONTAINS 512K X 16 SRAM

e0

.00002 Amp

12 mm

100 ns

M24128WMN

STMicroelectronics

M36L0R8060B1ZAQE

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

52 mA

16777216 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

16MX16

16M

-25 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B88

1.95 V

1.2 mm

8 mm

Not Qualified

268435456 bit

1.7 V

PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

e1

.00011 Amp

10 mm

STPAY-CLAMPEARL

STMicroelectronics

MEMORY CIRCUIT

LR164-SBN83GE

STMicroelectronics

MEMORY CIRCUIT

UNSPECIFIED

UNSPECIFIED

YES

NO LEAD

UNCASED CHIP

UPPER

X-XUUC-N

Not Qualified

M76DW63000A90ZT

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

73

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

20 mA

4194304 words

3

FLASH+SRAM

3,3/3.3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA73,10X12,32

Other Memory ICs

.8 mm

85 Cel

4MX16

4M

-40 Cel

BOTTOM

R-PBGA-B73

3.6 V

1.4 mm

8 mm

Not Qualified

67108864 bit

2.7 V

STATIC RAM IS ORGANIZED AS 512K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8

.0001 Amp

11.6 mm

90 ns

M36L0T7050T0ZAQ

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

30 mA

8388608 words

FLASH+PSRAM

1.8,3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

8MX16

8M

-25 Cel

TIN LEAD

BOTTOM

R-PBGA-B88

1.95 V

1.2 mm

8 mm

Not Qualified

134217728 bit

1.7 V

PSRAM IS ORGANIZED AS 2M X 16

e0

.000005 Amp

10 mm

90 ns

NAND512R4M2AZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

MR31Z052

STMicroelectronics

MEMORY CIRCUIT

M36W432B85ZA1

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

66

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

20 mA

3

FLASH+SRAM

3

GRID ARRAY, FINE PITCH

BGA66,8X12,32

Other Memory ICs

.8 mm

70 Cel

0 Cel

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

BOTTOM

R-PBGA-B66

Not Qualified

e1

85 ns

M36W416BG70ZA6

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

66

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

20 mA

1048576 words

3

FLASH+SRAM

3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA66,8X12,32

Other Memory ICs

.8 mm

85 Cel

1MX16

1M

-40 Cel

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

BOTTOM

R-PBGA-B66

3.3 V

1.4 mm

8 mm

Not Qualified

16777216 bit

2.7 V

STATIC RAM ORGANISED AS 256K X 16

e1

.00001 Amp

12 mm

70 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.