STMicroelectronics Other Function Memory ICs 2,067

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
ST25DV04K-IER6T3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		4096 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel	4KX1	4K	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.2 mm	3 mm		4096 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
ST25DV64K-IER6S3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		65536 words	3.3			1	SMALL OUTLINE			1.27 mm	85 Cel	64KX1	64K	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm		65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
M24SR64-YDW6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel	8KX8	8K	-40 Cel		DUAL	R-PDSO-G8	1	5.5 V	1.2 mm	3 mm		65536 bit	2.7 V						4.4 mm
ST25DV16K-IER6S3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		16384 words	3.3			1	SMALL OUTLINE			1.27 mm	85 Cel	16KX1	16K	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm		16384 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
ST25DV64K-IER6T3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		65536 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel	64KX1	64K	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.2 mm	3 mm		65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
STM32F103ZGH6JTR	STMicroelectronics	MEMORY CIRCUIT																																					NOT SPECIFIED	NOT SPECIFIED
ST25DV04K-IER6S3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		4096 words	3.3			1	SMALL OUTLINE			1.27 mm	85 Cel	4KX1	4K	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm		4096 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
M24SR64-YMN6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE			1.27 mm	85 Cel	8KX8	8K	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm		65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
ST25DV16K-IER6T3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		16384 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel	16KX1	16K	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.2 mm	3 mm		16384 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
ST25DV04K-JFR6D3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	12	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		4096 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	4KX1	4K	-40 Cel		DUAL	S-PDSO-N12		5.5 V	.6 mm	3 mm		4096 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
ST25DV04K-IER6C3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		4096 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	4KX1	4K	-40 Cel		DUAL	R-PDSO-N8		5.5 V	.6 mm	2 mm		4096 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
ST25DV64K-JFR6D3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	12	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		65536 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	64KX1	64K	-40 Cel		DUAL	S-PDSO-N12		5.5 V	.6 mm	3 mm		65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
ST25DV16K-JFR6D3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	12	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		16384 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	16KX1	16K	-40 Cel		DUAL	S-PDSO-N12		5.5 V	.6 mm	3 mm		16384 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
M24SR64-YMC6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-N8	1	5.5 V	.6 mm	2 mm		65536 bit	2.7 V		e4	30	260		3 mm
ST25DV04K-JFR6L3	STMicroelectronics	MEMORY CIRCUIT																																					NOT SPECIFIED	NOT SPECIFIED
M24SR64-YDW8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		65536 words				1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	105 Cel	64KX1	64K	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.2 mm	2.9 mm		65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		4.3 mm
M24SR64-YMN8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		65536 words				1	SMALL OUTLINE			1.27 mm	105 Cel	64KX1	64K	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm		65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
M24SR64-YSB12I/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SYNCHRONOUS		8192 words	3.3			8	UNCASED CHIP				85 Cel	8KX8	8K	-40 Cel		UPPER	X-XUUC-N		5.5 V				65536 bit	2.7 V
M24SR64-YSG12I/2	STMicroelectronics	MEMORY CIRCUIT			DIE	RECTANGULAR		YES	1	CMOS		SYNCHRONOUS		8192 words	3.3			8	UNCASED CHIP	DIE OR CHIP				8KX8	8K			UNSPECIFIED	R-XUUC-N		5.5 V				65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED
ST25DV04K-JFR6U3	STMicroelectronics	MEMORY CIRCUIT																																					NOT SPECIFIED	NOT SPECIFIED
LRI64-SBN18/3GE	STMicroelectronics	MEMORY CIRCUIT	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		64 words				1	UNCASED CHIP				85 Cel	64X1	64	-20 Cel		UPPER	X-XUUC-N		3 V				64 bit	1.5 V
NAND256R4M2CZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137					Not Qualified
NAND01GR3M3BZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
M36W832TE85ZA1S	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	2MX16	2M	0 Cel		BOTTOM	R-PBGA-B66		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16					12 mm
NAND01GW3M2CZB5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		134217728 words	3	FLASH+SDRAM	3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	128MX8	128M	-30 Cel		BOTTOM	R-PBGA-B137		3.6 V	1.2 mm	10.5 mm	Not Qualified	1073741824 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32		40	260		13 mm
M28F221-70N1	STMicroelectronics
NAND256R3M0AZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B107					Not Qualified
M28F221-80YN5	STMicroelectronics
NAND01GR4M3CZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
M36W108AB120ZM5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words		FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-20 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e1			.00002 Amp	11.8 mm	120 ns
M76DW52003BA70Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8	e0			.0001 Amp	11.6 mm	70 ns
NAND512R4M4CZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
M39432-20VNC1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		20 mA		3.3	EEPROM+FLASH	3.3		SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Other Memory ICs	.5 mm	70 Cel			0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40					Not Qualified				e0			.000002 Amp		200 ns
NAND256R3M4AZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
NAND256W4M0BZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B107					Not Qualified
NAND256W4M2BZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137					Not Qualified
NAND512W4M4BZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
TS27C1001VQ20	STMicroelectronics
M36DR432B120ZA6C	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM	e0				12 mm	120 ns
NAND512R4M5CZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
M28F141-15P1	STMicroelectronics
M36W108B100ZM6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words				8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel	1MX8	1M	-40 Cel		BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm
M36W108AT100ZN5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words		FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0				11.8 mm	100 ns
NAND01GW3M3BZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
M36L0T7050B0ZAQF	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	30 mA	8388608 words		FLASH+PSRAM	1.8,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88		1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 2M X 16	e1			.000005 Amp	10 mm	90 ns
M28F221-90YN1	STMicroelectronics
NAND256W3M5BZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
LR164-MBTG3GE	STMicroelectronics	MEMORY CIRCUIT				UNSPECIFIED	UNSPECIFIED	YES			NO LEAD								UNCASED CHIP									UPPER	X-XUUC-N					Not Qualified

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.