STMicroelectronics Other Function Memory ICs 2,067

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Interleaved Burst Length Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

M36W432B85ZA6

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

66

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

20 mA

3

FLASH+SRAM

3

GRID ARRAY, FINE PITCH

BGA66,8X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

BOTTOM

R-PBGA-B66

Not Qualified

e1

85 ns

NAND01GW4M3CZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND01GR3N6AZC5E

STMicroelectronics

NAND512W3M5CZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M36L0R8060T1ZAQT

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

52 mA

16777216 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

16MX16

16M

-25 Cel

TIN LEAD

BOTTOM

R-PBGA-B88

1.95 V

1.2 mm

8 mm

Not Qualified

268435456 bit

1.7 V

PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

e0

.00011 Amp

10 mm

M36W0R6050B0ZAQ

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

45 mA

4194304 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

4MX16

4M

-30 Cel

TIN LEAD

BOTTOM

R-PBGA-B88

1.95 V

1.2 mm

8 mm

Not Qualified

67108864 bit

1.7 V

PSRAM IS ORGANIZED AS 2M X 16

e0

.0001 Amp

10 mm

85 ns

M28F201-100XP3R

STMicroelectronics

NAND256R3M0CZB5E

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

107

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

33554432 words

1.8

FLASH+SDRAM

1.8

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA107,10X14,32

Other Memory ICs

.8 mm

85 Cel

32MX8

32M

-30 Cel

BOTTOM

R-PBGA-B107

1.95 V

1.2 mm

10.5 mm

Not Qualified

268435456 bit

1.7 V

LPSDRAM IS ORGANISED AS 16M X 16

40

260

13 mm

NAND01GW4M2AZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

NAND01GR4M3CZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND01GR3M0BZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA107,10X14,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B107

Not Qualified

M36W0T7050T0ZAQT

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

8388608 words

FLASH+PSRAM

1.8,3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

8MX16

8M

-30 Cel

TIN LEAD

BOTTOM

R-PBGA-B88

2 V

1.2 mm

8 mm

Not Qualified

134217728 bit

1.7 V

PSRAM IS ORGANIZED AS 2M X 16

e0

10 mm

70 ns

M76DW52003BA70ZT

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

73

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

20 mA

2097152 words

3

FLASH+SRAM

3,3/3.3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA73,10X12,32

Other Memory ICs

.8 mm

85 Cel

2MX16

2M

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B73

3.6 V

1.4 mm

8 mm

Not Qualified

33554432 bit

2.7 V

STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8

e0

.0001 Amp

11.6 mm

70 ns

ST23YR48

STMicroelectronics

MEMORY CIRCUIT

NAND512R4M3BZB5F

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

149

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

33554432 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

32MX16

32M

-30 Cel

BOTTOM

R-PBGA-B149

1.95 V

1.2 mm

10 mm

Not Qualified

536870912 bit

1.7 V

LPSDRAM IS ORGANISED AS 16M X 16

40

260

13.5 mm

TS71190BP

STMicroelectronics

MK48C02-20

STMicroelectronics

M72DW64000B70ZT

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

73

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

20 mA

4194304 words

3

FLASH+PSRAM

3,3/3.3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA73,10X12,32

Other Memory ICs

.8 mm

85 Cel

4MX16

4M

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B73

3.6 V

1.4 mm

8 mm

Not Qualified

67108864 bit

2.7 V

PSEUDO STATIC RAM IS ORGANIZED AS 1M X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8

e0

.0015 Amp

11.6 mm

70 ns

ET12147HJ3

STMicroelectronics

NAND256W4M0BZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA107,10X14,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B107

Not Qualified

NAND256R4M3CZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND256W3M4AZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M36P0R9060E0ZACE

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA107,9X12,32

Other Memory ICs

.8 mm

85 Cel

32MX16

32M

-30 Cel

BOTTOM

R-PBGA-B107

1.95 V

1.2 mm

8 mm

Not Qualified

536870912 bit

1.7 V

PSRAM IS ORGANIZED AS 4M X 16

40

260

11 mm

70 ns

M27C128A20F1X

STMicroelectronics

NAND256W3M4BZB5F

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

149

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

16777216 words

3

FLASH+SDRAM

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

16MX16

16M

-30 Cel

BOTTOM

R-PBGA-B149

3.6 V

1.2 mm

10 mm

Not Qualified

268435456 bit

2.5 V

LPSDRAM IS ORGANISED AS 16M X 16

40

260

13.5 mm

NAND256R4M3CZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

DSM2180F3-90K6

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

52

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

ASYNCHRONOUS

131072 words

5

8

CHIP CARRIER

1.27 mm

85 Cel

128KX8

128K

-40 Cel

MATTE TIN

QUAD

S-PQCC-J52

5.5 V

4.57 mm

19.1262 mm

Not Qualified

1048576 bit

4.5 V

e3

19.1262 mm

NAND256W3M3AZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M29W400BB90A6T

STMicroelectronics

NAND256W4M3BZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M36LLR8860T1ZAQE

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

52 mA

16777216 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

16MX16

16M

-25 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B88

1.95 V

1.4 mm

8 mm

Not Qualified

268435456 bit

1.7 V

PSRAM ALSO ORGANIZED AS 4M X 16

e1

.00011 Amp

10 mm

M36LLR8760D1ZAQE

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

52 mA

16777216 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

16MX16

16M

-25 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B88

1.95 V

1.4 mm

8 mm

Not Qualified

268435456 bit

1.7 V

PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

e1

.00011 Amp

10 mm

MK41S80X25TR

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

4096 words

5

5

4

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

4KX4

4K

0 Cel

TIN LEAD

DUAL

R-PDSO-J24

Not Qualified

16384 bit

e0

.12 Amp

25 ns

M36W0R5020B0ZAQT

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

45 mA

2097152 words

1.8

FLASH+SRAM

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

2MX16

2M

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B88

1.95 V

1.2 mm

8 mm

Not Qualified

33554432 bit

1.7 V

SRAM IS ORGANIZED AS 256K X 16

e0

.00005 Amp

10 mm

70 ns

NAND512W3M0BZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA107,10X14,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B107

Not Qualified

MK41L69N45

STMicroelectronics

TS71191BJ

STMicroelectronics

NAND512R3M2BZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

M36W108AB120ZN5T

STMicroelectronics

MEMORY CIRCUIT

OTHER

48

VLGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BUTT

ASYNCHRONOUS

40 mA

1048576 words

FLASH+SRAM

3/3.3

8

GRID ARRAY, VERY THIN PROFILE

LGA48,6X8,40

Other Memory ICs

1 mm

85 Cel

1MX8

1M

-20 Cel

TIN LEAD

BOTTOM

R-PBGA-B48

3.6 V

1 mm

9.8 mm

Not Qualified

8388608 bit

2.7 V

ALSO CONTAINS 128K X 8 SRAM

e0

11.8 mm

120 ns

NAND512R4M5AZB5E

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

149

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

33554432 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

32MX16

32M

-30 Cel

BOTTOM

R-PBGA-B149

1.95 V

1.2 mm

10 mm

Not Qualified

536870912 bit

1.7 V

LPSDRAM IS ORGANISED AS 16M X 16

40

260

13.5 mm

NAND512R3M4BZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND256W3M5CZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND256W4M3BZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND256R4M4BZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND01GR3M3CZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M29W006AB80N6T

STMicroelectronics

M36W0T7050T0ZAQE

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

8388608 words

FLASH+PSRAM

1.8,3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

8MX16

8M

-30 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B88

2 V

1.2 mm

8 mm

Not Qualified

134217728 bit

1.7 V

PSRAM IS ORGANIZED AS 2M X 16

e1

10 mm

70 ns

NAND256R3M3AZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.