STMicroelectronics Other Function Memory ICs 2,067

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TS27C1001CQ25	STMicroelectronics
NAND256R3M0AZBE	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		33554432 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-30 Cel		BOTTOM	R-PBGA-B107	1.95 V	1.2 mm	10.5 mm	Not Qualified	268435456 bit	1.7 V			40	260		13 mm
NAND01GR3N5AZB5F	STMicroelectronics
ST95041WB3	STMicroelectronics
M36L0T7050B2ZAQE	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		FLASH+PSRAM	1.8,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B88	2 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 2M X 16		40	260		10 mm	85 ns
NAND01GR4M2CZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137				Not Qualified
NAND256R3M5AZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
NAND512R4M4BZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M76DW52004TA70Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B73	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8				.0001 Amp	11.6 mm	70 ns
NAND256W4M4BZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
NAND512W4M2CZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137				Not Qualified
NAND256W4M2BZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137				Not Qualified
NAND256W4M5AZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M36W216BI85ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	1MX16	1M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 128KBIT X 16	e1			.00001 Amp	12 mm	85 ns
NAND512W4M5BZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
NAND01GW3M4AZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M28F221-80YN3	STMicroelectronics
NAND01GR3M2BZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137				Not Qualified
NAND512R3M2BZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137				Not Qualified
M36WT864BF85ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	1.8	FLASH+SRAM	1.8/2,3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA96,8X14,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B96	2.2 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 512K X 16	e0			.00002 Amp	14 mm	85 ns
NAND01GR3M4CZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M28F141-10XK1	STMicroelectronics
NAND01GR4M3AZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M36LLR8860D1ZAQE	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSRAM ALSO ORGANIZED AS 4M X 16	e1			.00011 Amp	10 mm
M28F201-200K3R	STMicroelectronics
M76DW52003BA90Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8	e0			.0001 Amp	11.6 mm	90 ns
M76DW52004BA70Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B73	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8				.0001 Amp	11.6 mm	70 ns
NAND01GR4M3BZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
MK41L68N45	STMicroelectronics
NAND512R4M3CZB5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel		BOTTOM	R-PBGA-B149	1.95 V	1.2 mm	10 mm	Not Qualified	536870912 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16		40	260		13.5 mm
NAND256R4M0BZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B107				Not Qualified
NAND512W3M0AZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B107				Not Qualified
M36W108T120ZN5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words		FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	120 ns
M39832T12WNE6TR	STMicroelectronics
TS27C256CQ30	STMicroelectronics
NAND256R4M0AZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B107				Not Qualified
M76DW52004TA90ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B73	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8				.0001 Amp	11.6 mm	90 ns
M36W832BE70ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16	e0			.00002 Amp	12 mm	70 ns
NAND01GW4M4CZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
NAND256R3M0CZBF	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		33554432 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-30 Cel		BOTTOM	R-PBGA-B107	1.95 V	1.2 mm	10.5 mm	Not Qualified	268435456 bit	1.7 V			40	260		13 mm
NAND01GW3M5CZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M36WT864TF10ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	1.8	FLASH+SRAM	1.8/2,3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA96,8X14,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B96	2.2 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM IS ORGANIZED AS 512K X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0			.00002 Amp	14 mm	100 ns
M76DW52003TA90ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8	e0			.0001 Amp	11.6 mm	90 ns
NAND512W4M2BZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137				Not Qualified
NAND512R4M0CZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B107				Not Qualified
M36L0R7060B1ZAQE	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B88	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 4M X 16		40	260		10 mm
M36W832BE70ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16	e0			.00002 Amp	12 mm	70 ns
M27C1000-25XF1X	STMicroelectronics

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.