STMicroelectronics Other Function Memory ICs 2,067

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
NAND512W3M5BZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M36DR232A100ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM	e0			.000025 Amp	12 mm	100 ns
NAND512R4M3AZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M36L0T8060T1ZAQF	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL					FLASH+PSRAM	1.8,3		GRID ARRAY, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B88				Not Qualified									85 ns
M36WT864TF100ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B96	2.2 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 512K X 16					14 mm
NAND256R3M0BZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B107				Not Qualified
NAND256W3M3BZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
NAND01GW3M4BZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M28F201-100P3R	STMicroelectronics
M36LLR8760D1ZAQT	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0			.00011 Amp	10 mm
NAND01GR3M0CZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B107				Not Qualified
NAND512R3M2BZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137				Not Qualified
NAND01GR4M2BZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137				Not Qualified
NAND256W3M3CZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M36DR432A100ZA6C	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM	e0				12 mm	100 ns
NAND01GR4M2BZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137				Not Qualified
M23256B1	STMicroelectronics
M36W108T120ZM5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words				8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel	1MX8	1M	-20 Cel		BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm
M27C1000-15XF1X	STMicroelectronics
M36DR232A100ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM	e0			.000025 Amp	12 mm	100 ns
NAND512R3M0AZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		67108864 words	1.8	FLASH+SDRAM	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel	64MX8	64M	-30 Cel		BOTTOM	R-PBGA-B107	1.95 V	1.2 mm	10.5 mm	Not Qualified	536870912 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16		40	260		13 mm
M36W432T70ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16	e1				12 mm	70 ns
NAND01GR4M4BZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
MK48T13B12	STMicroelectronics
NAND512W3M5AZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M36LLR8760M1ZAQ	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0			.00011 Amp	10 mm
IMSB433-16	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		16777216 words	5			8	MICROELECTRONIC ASSEMBLY				50 Cel	16MX8	16M	0 Cel		UNSPECIFIED	R-XXMA-T16	5.25 V			Not Qualified	134217728 bit	4.75 V	SRAM IS CONFIGURED AS 64 K X 8
NAND512W3M4AZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
LR164-W41XX	STMicroelectronics	MEMORY CIRCUIT		8		RECTANGULAR	UNSPECIFIED	YES			NO LEAD								SMALL OUTLINE									DUAL	R-XDSO-N8				Not Qualified
M36W108AB120ZM6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words		FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e1			.00002 Amp	11.8 mm	120 ns
HCC4021BEY	STMicroelectronics
TS27C64VQ30	STMicroelectronics
M74DW66500B70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	30 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	PSEUDO STATIC RAM IS ORGANIZED AS 2M X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8	e0			.0015 Amp	11.6 mm	70 ns
NAND512R3M0CZB5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		67108864 words	1.8	FLASH+SDRAM	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel	64MX8	64M	-30 Cel		BOTTOM	R-PBGA-B107	1.95 V	1.2 mm	10.5 mm	Not Qualified	536870912 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16		40	260		13 mm
NAND01GW4M4AZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
NAND01GW4M3BZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
NAND512R3M5AZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M28F221-90XN1	STMicroelectronics
NAND512W4M2BZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137				Not Qualified
M36W216T100ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1MX16	1M	0 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	ALSO CONTAINS 128K X 16 SRAM					12 mm
DSM2180F3-90T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		131072 words	5			8	FLATPACK			.65 mm	85 Cel	128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G52	5.5 V	2.35 mm	10 mm	Not Qualified	1048576 bit	4.5 V		e4				10 mm
NAND256W3M3CZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M27C1000-20XF1X	STMicroelectronics
M36DR432BD85ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	2097152 words	2	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.8 V	SRAM IS ORGANIZED AS 256K X 16	e0			.00001 Amp	12 mm	85 ns
M24256MW	STMicroelectronics
NAND01GW4M2BZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137				Not Qualified
M36W0R5020B0ZAQF	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	45 mA	2097152 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.2 mm	8 mm	Not Qualified	33554432 bit	1.7 V	SRAM IS ORGANIZED AS 256K X 16	e1			.00005 Amp	10 mm	70 ns
TS27C256CQ20	STMicroelectronics

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.