Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | I2C Control Byte | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Interleaved Burst Length | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
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STMicroelectronics |
MEMORY CIRCUIT |
MILITARY |
40 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
250 mA |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
FIFOs |
2.54 mm |
125 Cel |
128X8 |
128 |
-55 Cel |
TIN LEAD |
DUAL |
R-CDIP-T40 |
5.25 V |
4 MHz |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
e0 |
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STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
250 mA |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
FIFOs |
2.54 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
5.25 V |
4 MHz |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
e0 |
52.18 mm |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
1.8 |
FLASH+SDRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
107 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
3 |
FLASH+SDRAM |
3 |
GRID ARRAY, FINE PITCH |
BGA107,10X14,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B107 |
Not Qualified |
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STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL EXTENDED |
88 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
8388608 words |
FLASH+PSRAM |
1.8,3/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA88,8X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
8MX16 |
8M |
-25 Cel |
BOTTOM |
R-PBGA-B88 |
2 V |
1.2 mm |
8 mm |
Not Qualified |
134217728 bit |
1.7 V |
PSRAM IS ORGANIZED AS 4M X 16 |
10 mm |
85 ns |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
107 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
1.8 |
FLASH+SDRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA107,10X14,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B107 |
Not Qualified |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
1.8 |
FLASH+SDRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
107 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
1.8 |
FLASH+SDRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA107,10X14,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B107 |
Not Qualified |
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STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
48 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
1048576 words |
8 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
1MX8 |
1M |
-20 Cel |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.35 mm |
9.8 mm |
Not Qualified |
8388608 bit |
2.7 V |
ALSO CONTAINS 128K X 8 SRAM |
11.8 mm |
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STMicroelectronics |
MEMORY CIRCUIT |
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STMicroelectronics |
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STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
88 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
8388608 words |
FLASH+PSRAM |
1.8,3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA88,8X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
8MX16 |
8M |
-30 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B88 |
2 V |
1.2 mm |
8 mm |
Not Qualified |
134217728 bit |
1.7 V |
PSRAM IS ORGANIZED AS 1M X 16 |
e0 |
10 mm |
70 ns |
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STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
73 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
20 mA |
4194304 words |
3 |
FLASH+PSRAM |
3,3/3.3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA73,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
4MX16 |
4M |
-40 Cel |
BOTTOM |
R-PBGA-B73 |
3.6 V |
1.4 mm |
8 mm |
Not Qualified |
67108864 bit |
2.7 V |
PSEUDO STATIC RAM IS ORGANIZED AS 1M X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8 |
.0015 Amp |
11.6 mm |
90 ns |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
1.8 |
FLASH+SDRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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|
STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
66 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
20 mA |
1048576 words |
3 |
FLASH+SRAM |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA66,8X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) |
BOTTOM |
R-PBGA-B66 |
3.3 V |
1.4 mm |
8 mm |
Not Qualified |
16777216 bit |
2.7 V |
STATIC RAM ORGANISED AS 128KBIT X 16 |
e1 |
.00001 Amp |
12 mm |
70 ns |
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STMicroelectronics |
MEMORY CIRCUIT |
64 |
SQUARE |
PLASTIC/EPOXY |
YES |
GULL WING |
FLATPACK |
QUAD |
S-PQFP-G64 |
Not Qualified |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
107 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
3 |
FLASH+SDRAM |
3 |
GRID ARRAY, FINE PITCH |
BGA107,10X14,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B107 |
Not Qualified |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
107 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
16777216 words |
1.8 |
FLASH+PSRAM |
1.8 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA107,9X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
16MX16 |
16M |
-30 Cel |
BOTTOM |
R-PBGA-B107 |
1.95 V |
1.2 mm |
8 mm |
Not Qualified |
268435456 bit |
1.7 V |
PSRAM IS ORGANISED AS 8M X 16 |
11 mm |
70 ns |
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STMicroelectronics |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
66 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
.8 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
BOTTOM |
R-PBGA-B66 |
3.3 V |
1.4 mm |
8 mm |
Not Qualified |
16777216 bit |
2.7 V |
ALSO CONTAINS 128K X 16 SRAM |
12 mm |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
1.8 |
FLASH+SDRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
3 |
FLASH+SDRAM |
3 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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STMicroelectronics |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
128 words |
3 |
32 |
UNCASED CHIP |
85 Cel |
128X32 |
128 |
-25 Cel |
UPPER |
X-XUUC-N |
3.5 V |
Not Qualified |
4096 bit |
2.5 V |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
1.8 |
FLASH+SDRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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STMicroelectronics |
OTP ROM |
COMMERCIAL |
MOS |
10 mA |
256 words |
COMMON |
1 |
WAFER |
Other Memory ICs |
70 Cel |
256X1 |
256 |
-10 Cel |
Not Qualified |
500 ns |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
1.8 |
FLASH+SDRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
1.8 |
FLASH+SDRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
48 |
VLGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BUTT |
ASYNCHRONOUS |
100 mA |
1048576 words |
FLASH+SRAM |
3/3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE |
LGA48,6X8,40 |
Other Memory ICs |
1 mm |
70 Cel |
1MX8 |
1M |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1 mm |
9.8 mm |
Not Qualified |
8388608 bit |
2.7 V |
ALSO CONTAINS 128K X 8 SRAM |
e0 |
.00002 Amp |
11.8 mm |
100 ns |
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STMicroelectronics |
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STMicroelectronics |
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STMicroelectronics |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
88 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
4194304 words |
1.8 |
FLASH+PSRAM |
1.8 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA88,8X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
4MX16 |
4M |
-30 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B88 |
1.95 V |
1.2 mm |
8 mm |
Not Qualified |
67108864 bit |
1.7 V |
PSRAM IS ORGANIZED AS 2M X 16 |
e1 |
10 mm |
70 ns |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
3 |
FLASH+SDRAM |
3 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
1.8 |
FLASH+SDRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
88 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
52 mA |
16777216 words |
1.8 |
FLASH+PSRAM |
1.8 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA88,8X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
16MX16 |
16M |
-25 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B88 |
1.95 V |
1.4 mm |
8 mm |
Not Qualified |
268435456 bit |
1.7 V |
PSRAM ALSO ORGANIZED AS 4M X 16 |
e0 |
.00011 Amp |
10 mm |
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STMicroelectronics |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
3 |
FLASH+SDRAM |
3 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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STMicroelectronics |
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STMicroelectronics |
MEMORY CIRCUIT |
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STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
256 words |
8 |
UNCASED CHIP |
85 Cel |
256X8 |
256 |
-40 Cel |
UPPER |
X-XUUC-N |
2048 bit |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
3 |
FLASH+SDRAM |
3 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
66 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
35 mA |
2097152 words |
3 |
FLASH+SRAM |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA66,8X12,32 |
Other Memory ICs |
.8 mm |
70 Cel |
2MX16 |
2M |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B66 |
3.6 V |
1.4 mm |
8 mm |
Not Qualified |
33554432 bit |
2.7 V |
SRAM IS ORGANISED AS 512K X 16 |
e0 |
.00002 Amp |
12 mm |
85 ns |
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STMicroelectronics |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
3 |
FLASH+SDRAM |
3 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
48 |
VLGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BUTT |
ASYNCHRONOUS |
1048576 words |
8 |
GRID ARRAY, VERY THIN PROFILE |
1 mm |
85 Cel |
1MX8 |
1M |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1 mm |
9.8 mm |
Not Qualified |
8388608 bit |
2.7 V |
ALSO CONTAINS 128K X 8 SRAM |
11.8 mm |
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|
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL EXTENDED |
149 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
16777216 words |
3 |
FLASH+SDRAM |
3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
16MX16 |
16M |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
3.6 V |
1.2 mm |
10 mm |
Not Qualified |
268435456 bit |
2.5 V |
LPSDRAM IS ORGANISED AS 16M X 16 |
40 |
260 |
13.5 mm |
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STMicroelectronics |
Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.
One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.
Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.
Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.