Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | I2C Control Byte | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Interleaved Burst Length | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
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STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL EXTENDED |
107 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
33554432 words |
1.8 |
FLASH+PSRAM |
1.8 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA107,9X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
32MX16 |
32M |
-30 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B107 |
1.95 V |
1.2 mm |
8 mm |
Not Qualified |
536870912 bit |
1.7 V |
PSRAM IS ORGANISED AS 8M X 16BIT |
e0 |
11 mm |
70 ns |
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STMicroelectronics |
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STMicroelectronics |
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STMicroelectronics |
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STMicroelectronics |
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STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
1.8 |
FLASH+SDRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
48 |
VLGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BUTT |
ASYNCHRONOUS |
1048576 words |
8 |
GRID ARRAY, VERY THIN PROFILE |
1 mm |
70 Cel |
1MX8 |
1M |
0 Cel |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1 mm |
9.8 mm |
Not Qualified |
8388608 bit |
2.7 V |
ALSO CONTAINS 128K X 8 SRAM |
11.8 mm |
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STMicroelectronics |
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STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
66 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
26 mA |
2097152 words |
1.8 |
FLASH+SRAM |
1.8/2 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA66,8X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
2MX16 |
2M |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B66 |
2.2 V |
1.4 mm |
8 mm |
Not Qualified |
33554432 bit |
1.65 V |
SRAM IS ORGANIZED AS 256K X 16 |
e0 |
.00001 Amp |
12 mm |
100 ns |
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STMicroelectronics |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
3 |
FLASH+SDRAM |
3 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
88 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
52 mA |
16777216 words |
1.8 |
FLASH+PSRAM |
1.8 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA88,8X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
16MX16 |
16M |
-25 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B88 |
1.95 V |
1.4 mm |
8 mm |
Not Qualified |
268435456 bit |
1.7 V |
PSRAM ALSO ORGANIZED AS 4M X 16 |
e0 |
.00011 Amp |
10 mm |
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STMicroelectronics |
MEMORY CIRCUIT |
UNSPECIFIED |
UNSPECIFIED |
YES |
NO LEAD |
UNCASED CHIP |
UPPER |
X-XUUC-N |
Not Qualified |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
1.8 |
FLASH+SDRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
88 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
52 mA |
16777216 words |
1.8 |
FLASH+PSRAM |
1.8 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA88,8X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
16MX16 |
16M |
-25 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B88 |
1.95 V |
1.4 mm |
8 mm |
Not Qualified |
268435456 bit |
1.7 V |
PSRAM ALSO ORGANIZED AS 4M X 16 |
e0 |
.00011 Amp |
10 mm |
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STMicroelectronics |
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STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL EXTENDED |
88 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
67108864 words |
1.8 |
FLASH+PSRAM |
1.8 |
32 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA88,8X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
64MX32 |
64M |
-25 Cel |
BOTTOM |
R-PBGA-B88 |
1.95 V |
1.2 mm |
8 mm |
Not Qualified |
2147483648 bit |
1.7 V |
10.05 mm |
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STMicroelectronics |
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STMicroelectronics |
MEMORY CIRCUIT |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
256 words |
8 |
UNCASED CHIP |
256X8 |
256 |
UPPER |
X-XUUC-N |
2048 bit |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
1.8 |
FLASH+SDRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
32 |
QCCN |
CERAMIC |
YES |
CMOS |
NO LEAD |
125 mA |
8192 words |
5 |
5 |
8 |
CHIP CARRIER |
LCC32(UNSPEC) |
SRAMs |
70 Cel |
8KX8 |
8K |
0 Cel |
TIN LEAD |
QUAD |
Not Qualified |
65536 bit |
e0 |
.125 Amp |
55 ns |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
3 |
FLASH+SDRAM |
3 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
66 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
26 mA |
2097152 words |
1.8 |
FLASH+SRAM |
1.8/2 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA66,8X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
2MX16 |
2M |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B66 |
2.2 V |
1.4 mm |
8 mm |
Not Qualified |
33554432 bit |
1.65 V |
SRAM IS ORGANIZED AS 256K X 16 |
e0 |
.00001 Amp |
12 mm |
120 ns |
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STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
48 |
VLGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BUTT |
ASYNCHRONOUS |
100 mA |
1048576 words |
FLASH+SRAM |
3/3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE |
LGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
1MX8 |
1M |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1 mm |
9.8 mm |
Not Qualified |
8388608 bit |
2.7 V |
ALSO CONTAINS 128K X 8 SRAM |
e0 |
.00002 Amp |
11.8 mm |
100 ns |
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STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
40 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
20 mA |
3.3 |
EEPROM+FLASH |
3.3 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP40,.8,20 |
Other Memory ICs |
.5 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
e0 |
.000002 Amp |
120 ns |
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STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
73 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
30 mA |
FLASH+SRAM |
3,3/3.3 |
GRID ARRAY, FINE PITCH |
BGA73,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-40 Cel |
BOTTOM |
R-PBGA-B73 |
Not Qualified |
.0015 Amp |
90 ns |
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STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
48 |
VLGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BUTT |
ASYNCHRONOUS |
40 mA |
1048576 words |
FLASH+SRAM |
3/3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE |
LGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
1MX8 |
1M |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1 mm |
9.8 mm |
Not Qualified |
8388608 bit |
2.7 V |
ALSO CONTAINS 128K X 8 SRAM |
e0 |
11.8 mm |
100 ns |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
137 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
3 |
FLASH+SDRAM |
3 |
GRID ARRAY, FINE PITCH |
BGA137,10X15,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B137 |
Not Qualified |
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STMicroelectronics |
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STMicroelectronics |
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STMicroelectronics |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
67108864 words |
1.8 |
8 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.8 mm |
85 Cel |
64MX8 |
64M |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
1.95 V |
1.2 mm |
10 mm |
Not Qualified |
536870912 bit |
1.7 V |
40 |
260 |
13.5 mm |
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STMicroelectronics |
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STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
96 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
35 mA |
4194304 words |
1.8 |
FLASH+SRAM |
1.8/2,3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA96,8X14,32 |
Other Memory ICs |
.8 mm |
85 Cel |
4MX16 |
4M |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B96 |
2.2 V |
1.4 mm |
8 mm |
Not Qualified |
67108864 bit |
1.65 V |
SRAM ORGANISATION IS 512K X 16 |
e0 |
.00002 Amp |
14 mm |
70 ns |
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STMicroelectronics |
MEMORY CIRCUIT |
INDUSTRIAL |
88 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
45 mA |
4194304 words |
1.8 |
FLASH+SRAM |
1.8 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA88,8X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
4MX16 |
4M |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B88 |
1.95 V |
1.2 mm |
8 mm |
Not Qualified |
67108864 bit |
1.7 V |
SRAM IS ORGANIZED AS 512K X 16 |
e0 |
.00001 Amp |
10 mm |
70 ns |
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|
STMicroelectronics |
INDUSTRIAL |
5 |
PLASTIC/EPOXY |
YES |
CMOS |
1.8/5 |
SOLCC5,.06,16 |
Other Memory ICs |
85 Cel |
-40 Cel |
Not Qualified |
2048 bit |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
3 |
FLASH+SDRAM |
3 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
88 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
52 mA |
16777216 words |
1.8 |
FLASH+PSRAM |
1.8 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA88,8X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
16MX16 |
16M |
-25 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B88 |
1.95 V |
1.4 mm |
8 mm |
Not Qualified |
268435456 bit |
1.7 V |
PSRAM ALSO ORGANIZED AS 4M X 16 |
e1 |
.00011 Amp |
10 mm |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
88 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
4194304 words |
1.8 |
FLASH+PSRAM |
1.8 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA88,8X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
4MX16 |
4M |
-30 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B88 |
1.95 V |
1.2 mm |
8 mm |
Not Qualified |
67108864 bit |
1.7 V |
PSRAM IS ORGANIZED AS 2M X 16 |
e1 |
10 mm |
70 ns |
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|
STMicroelectronics |
MEMORY CIRCUIT |
8 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
NO LEAD |
SMALL OUTLINE |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-N8 |
1 |
Not Qualified |
e4 |
30 |
260 |
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STMicroelectronics |
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STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
52 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
131072 words |
5 |
8 |
FLATPACK |
.65 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
QUAD |
S-PQFP-G52 |
5.5 V |
2.35 mm |
10 mm |
Not Qualified |
1048576 bit |
4.5 V |
10 mm |
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STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
16 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
SYNCHRONOUS |
1048576 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
50 Cel |
1MX8 |
1M |
0 Cel |
DUAL |
R-XDMA-T16 |
5.25 V |
Not Qualified |
8388608 bit |
4.75 V |
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STMicroelectronics |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
107 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
1.8 |
FLASH+SDRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA107,10X14,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B107 |
Not Qualified |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
88 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
52 mA |
16777216 words |
1.8 |
FLASH+PSRAM |
1.8 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA88,8X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
16MX16 |
16M |
-25 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B88 |
1.95 V |
1.4 mm |
8 mm |
Not Qualified |
268435456 bit |
1.7 V |
PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE |
e1 |
.00011 Amp |
10 mm |
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|
STMicroelectronics |
MEMORY CIRCUIT |
OTHER |
149 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
3 |
FLASH+SDRAM |
3 |
GRID ARRAY, FINE PITCH |
BGA149,12X16,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B149 |
Not Qualified |
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STMicroelectronics |
Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.
One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.
Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.
Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.