STMicroelectronics Other Function Memory ICs 2,067

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Interleaved Burst Length Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

NAND256R4M2BZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

NAND256R4M3BZB5F

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

149

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

16MX16

16M

-30 Cel

BOTTOM

R-PBGA-B149

1.95 V

1.2 mm

10 mm

Not Qualified

268435456 bit

1.7 V

LPSDRAM IS ORGANISED AS 16M X 16

40

260

13.5 mm

M27C1000-10F1X

STMicroelectronics

ST1305BW4

STMicroelectronics

DSM2180F3-15T6

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

52

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

ASYNCHRONOUS

131072 words

5

8

FLATPACK

.65 mm

85 Cel

128KX8

128K

-40 Cel

NICKEL PALLADIUM GOLD

QUAD

S-PQFP-G52

5.5 V

2.35 mm

10 mm

Not Qualified

1048576 bit

4.5 V

e4

10 mm

M36W432T70ZA1

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

66

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

20 mA

3

FLASH+SRAM

3

GRID ARRAY, FINE PITCH

BGA66,8X12,32

Other Memory ICs

.8 mm

70 Cel

0 Cel

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

BOTTOM

R-PBGA-B66

Not Qualified

e1

70 ns

MK41S80X20TR

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

4096 words

5

5

4

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

4KX4

4K

0 Cel

TIN LEAD

DUAL

R-PDSO-J24

Not Qualified

16384 bit

e0

.12 Amp

20 ns

ST95021WB3

STMicroelectronics

NAND01GW3M2BZC5E

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

137

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

134217728 words

3

FLASH+SDRAM

3

8

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

128MX8

128M

-30 Cel

BOTTOM

R-PBGA-B137

3.6 V

1.4 mm

10.5 mm

Not Qualified

1073741824 bit

2.5 V

LPSDRAM IS ORGANISED AS 16M X 32

40

260

13 mm

NAND512R4M0AZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA107,10X14,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B107

Not Qualified

NAND512W3M3CZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M29W006AB90N5T

STMicroelectronics

NAND256R3M5CZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

SRTAG2KL-PMC6/5

STMicroelectronics

INDUSTRIAL

8

SON

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

NO LEAD

1.8/5

SMALL OUTLINE

SOLCC8,.12,20

Other Memory ICs

.5 mm

85 Cel

-40 Cel

DUAL

R-PDSO-N8

Not Qualified

2048 bit

NAND256W3M0AZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA107,10X14,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B107

Not Qualified

M36L0R7050L1ZAMF

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

67108864 words

1.8

FLASH+PSRAM

1.8

32

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

64MX32

64M

-25 Cel

BOTTOM

R-PBGA-B88

1.95 V

1.2 mm

8 mm

Not Qualified

2147483648 bit

1.7 V

10.05 mm

M36W832BE70ZA6S

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

66

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

20 mA

2097152 words

3

FLASH+SRAM

3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA66,8X12,32

Other Memory ICs

.8 mm

85 Cel

2MX16

2M

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B66

3.6 V

1.4 mm

8 mm

Not Qualified

33554432 bit

2.7 V

SRAM IS ORGANISED AS 512K X 16

e0

.00002 Amp

12 mm

70 ns

LR164-W43XX

STMicroelectronics

MEMORY CIRCUIT

8

RECTANGULAR

UNSPECIFIED

YES

NO LEAD

SMALL OUTLINE

DUAL

R-XDSO-N8

Not Qualified

NAND256W3M2AZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

NAND512W4M5BZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M36LLR8760D1ZAQF

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

52 mA

16777216 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

16MX16

16M

-25 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B88

1.95 V

1.4 mm

8 mm

Not Qualified

268435456 bit

1.7 V

PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

e1

.00011 Amp

10 mm

M36W0R7050T0ZAQ

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

45 mA

8388608 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

8MX16

8M

-30 Cel

TIN LEAD

BOTTOM

R-PBGA-B88

1.95 V

1.2 mm

8 mm

Not Qualified

134217728 bit

1.7 V

PSRAM IS ORGANIZED AS 2M X 16

e0

.00007 Amp

10 mm

NAND256W4M2BZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

NAND256R3M3CZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND256W3M4CZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M36L0T7050T0ZAQE

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

30 mA

8388608 words

FLASH+PSRAM

1.8,3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

8MX16

8M

-25 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B88

1.95 V

1.2 mm

8 mm

Not Qualified

134217728 bit

1.7 V

PSRAM IS ORGANIZED AS 2M X 16

e1

.000005 Amp

10 mm

90 ns

TS71191CP

STMicroelectronics

NAND256R4M3CZBF

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

16777216 words

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

16MX16

16M

-30 Cel

BOTTOM

R-PBGA-B149

1.95 V

1.2 mm

10 mm

Not Qualified

268435456 bit

1.7 V

40

260

13.5 mm

M36W108B100ZN6T

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

48

VLGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BUTT

ASYNCHRONOUS

1048576 words

8

GRID ARRAY, VERY THIN PROFILE

1 mm

85 Cel

1MX8

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1 mm

9.8 mm

Not Qualified

8388608 bit

2.7 V

ALSO CONTAINS 128K X 8 SRAM

11.8 mm

M36W416BG85ZA1

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

66

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

20 mA

1048576 words

3

FLASH+SRAM

3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA66,8X12,32

Other Memory ICs

.8 mm

70 Cel

1MX16

1M

0 Cel

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

BOTTOM

R-PBGA-B66

3.3 V

1.4 mm

8 mm

Not Qualified

16777216 bit

2.7 V

STATIC RAM ORGANISED AS 256K X 16

e1

.00001 Amp

12 mm

85 ns

M29W006AB100N5T

STMicroelectronics

M36L0R8060B0ZAQF

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

16777216 words

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

16MX16

16M

-25 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B88

1.95 V

1.2 mm

8 mm

Not Qualified

268435456 bit

1.7 V

PSRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

e1

40

260

10 mm

STPAY-TIGER

STMicroelectronics

MEMORY CIRCUIT

NAND01GR3M3AZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND01GW3M2AZB5F

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

137

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

134217728 words

3

FLASH+SDRAM

3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

128MX8

128M

-30 Cel

BOTTOM

R-PBGA-B137

3.6 V

1.2 mm

10.5 mm

Not Qualified

1073741824 bit

2.5 V

LPSDRAM IS ORGANISED AS 16M X 32

40

260

13 mm

M36W0R6050T0ZAQF

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

45 mA

4194304 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

4MX16

4M

-30 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B88

1.95 V

1.2 mm

8 mm

Not Qualified

67108864 bit

1.7 V

PSRAM IS ORGANIZED AS 2M X 16

e1

.0001 Amp

10 mm

85 ns

NAND256W4M0CZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA107,10X14,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B107

Not Qualified

M36DR432A120ZA6

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

66

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

40 mA

2097152 words

FLASH+SRAM

1.8/2

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA66,8X12,32

Other Memory ICs

.8 mm

85 Cel

2MX16

2M

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B66

2.2 V

1.4 mm

8 mm

Not Qualified

33554432 bit

1.65 V

THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM

e0

12 mm

120 ns

M28F221-80N5

STMicroelectronics

NAND512R4M5BZB5F

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

149

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

33554432 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

32MX16

32M

-30 Cel

BOTTOM

R-PBGA-B149

1.95 V

1.2 mm

10 mm

Not Qualified

536870912 bit

1.7 V

LPSDRAM IS ORGANISED AS 16M X 16

40

260

13.5 mm

M36W108B120ZN5T

STMicroelectronics

MEMORY CIRCUIT

OTHER

48

VLGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BUTT

ASYNCHRONOUS

1048576 words

8

GRID ARRAY, VERY THIN PROFILE

1 mm

85 Cel

1MX8

1M

-20 Cel

BOTTOM

R-PBGA-B48

3.6 V

1 mm

9.8 mm

Not Qualified

8388608 bit

2.7 V

ALSO CONTAINS 128K X 8 SRAM

11.8 mm

M29W006AB80N5T

STMicroelectronics

M36W108AT100ZM1

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

48

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

100 mA

1048576 words

FLASH+SRAM

3/3.3

8

GRID ARRAY, LOW PROFILE

BGA48,6X8,40

Other Memory ICs

1 mm

70 Cel

1MX8

1M

0 Cel

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

BOTTOM

R-PBGA-B48

3.6 V

1.35 mm

9.8 mm

Not Qualified

8388608 bit

2.7 V

ALSO CONTAINS 128K X 8 SRAM

e1

.00002 Amp

11.8 mm

100 ns

NAND256W3M0AZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA107,10X14,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B107

Not Qualified

M27C4001-10F2X

STMicroelectronics

M36W108AT120ZN6T

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

48

VLGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BUTT

ASYNCHRONOUS

40 mA

1048576 words

FLASH+SRAM

3/3.3

8

GRID ARRAY, VERY THIN PROFILE

LGA48,6X8,40

Other Memory ICs

1 mm

85 Cel

1MX8

1M

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B48

3.6 V

1 mm

9.8 mm

Not Qualified

8388608 bit

2.7 V

ALSO CONTAINS 128K X 8 SRAM

e0

11.8 mm

120 ns

NAND512W4M3BZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M28F221-100YN5

STMicroelectronics

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.