STMicroelectronics Other Function Memory ICs 2,067

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TS71190BE	STMicroelectronics
IMSB411-8	STMicroelectronics	MEMORY CIRCUIT		16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS		1048576 words				8	MICROELECTRONIC ASSEMBLY					1MX8	1M			DUAL	R-XDMA-T16					Not Qualified	8388608 bit
M28F221-100YN3	STMicroelectronics
NAND256W3M0CZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B107					Not Qualified
NAND01GW4M4AZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
M36WT864BF70ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	1.8	FLASH+SRAM	1.8/2,3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA96,8X14,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B96		2.2 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 512K X 16	e0			.00002 Amp	14 mm	70 ns
TS71180CCJ-D	STMicroelectronics
LRI64-MBTG/3XX	STMicroelectronics	MEMORY CIRCUIT	OTHER	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		64 words				1	SMALL OUTLINE, VERY THIN PROFILE			.5 mm	85 Cel	64X1	64	-20 Cel		DUAL	R-PDSO-N8		3 V	.6 mm	2 mm	Not Qualified	64 bit	1.5 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
NAND01GR3M5CZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
TS71321CJ	STMicroelectronics
M76DW52004TA90Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8				.0001 Amp	11.6 mm	90 ns
M8803F2Y-15T1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			131072 words	5			8	FLATPACK			.65 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQFP-G52		5.5 V	2.35 mm	10 mm	Not Qualified	1048576 bit	4.5 V						10 mm
IMSB410-11	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS		163840 words	5			8	MICROELECTRONIC ASSEMBLY				50 Cel	160KX8	160K	0 Cel		DUAL	R-XDMA-T16		5.25 V			Not Qualified	1310720 bit	4.75 V
NAND01GR3M2AZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137					Not Qualified
M8813F3Y-15T1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			131072 words	5			8	FLATPACK			.65 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQFP-G52		5.5 V	2.35 mm	10 mm	Not Qualified	1048576 bit	4.5 V						10 mm
M36L0T7050T2ZAQT	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		FLASH+PSRAM	1.8,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B88		2 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 2M X 16					10 mm	85 ns
NAND512W4M3CZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
M28F201-200K6R	STMicroelectronics
NAND256W4M4AZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
M36W216TI70ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	1MX16	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 128KBIT X 16	e1			.00001 Amp	12 mm	70 ns
NAND256R4M3BZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-30 Cel		BOTTOM	R-PBGA-B149		1.95 V	1.2 mm	10 mm	Not Qualified	268435456 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16		40	260		13.5 mm
M28F221-70XN3	STMicroelectronics
NAND256R4M0CZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B107					Not Qualified
SRIX512-W4/XXX	STMicroelectronics	MEMORY CIRCUIT	OTHER		DIE		UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		16 words	3			32	UNCASED CHIP				85 Cel	16X32	16	-20 Cel		UPPER		1	3.5 V			Not Qualified	512 bit	2.5 V
NAND01GR4M2BZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137					Not Qualified
TS27C64CQ15	STMicroelectronics
NAND512W3M2AZC5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		33554432 words	3	FLASH+SDRAM	3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	32MX8	32M	-30 Cel		BOTTOM	R-PBGA-B137		3.6 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32		40	260		13 mm
MK41S80P15	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE		120 mA	4096 words	5		5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	4KX4	4K	0 Cel	TIN LEAD	DUAL	R-XDIP-T22					Not Qualified	16384 bit			e0			.12 Amp		15 ns
NAND256R4M4AZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
NAND256R4M0CZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B107					Not Qualified
M74DW66500B90ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	30 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	PSEUDO STATIC RAM IS ORGANIZED AS 2M X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8				.0015 Amp	11.6 mm	90 ns
TS71191CE	STMicroelectronics
M36W108T100ZN5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words		FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	100 ns
ST95011WB3	STMicroelectronics
M36W108T120ZM6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words		FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	120 ns
NAND512W3M4BZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
NAND256R4M3AZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-30 Cel		BOTTOM	R-PBGA-B149		1.95 V	1.2 mm	10 mm	Not Qualified	268435456 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16		40	260		13.5 mm
M76DW52004TA70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8				.0001 Amp	11.6 mm	70 ns
M28F201-200P3R	STMicroelectronics
MK48H74N-55	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE		125 mA	8192 words	5		5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28					Not Qualified	65536 bit			e0			.125 Amp		55 ns
M36W108T120ZM6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words				8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel	1MX8	1M	-40 Cel		BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm
NAND01GR3M2AZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137					Not Qualified
NAND01GW4M4CZC5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
NAND512W3M2CZC5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		33554432 words	3	FLASH+SDRAM	3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	32MX8	32M	-30 Cel		BOTTOM	R-PBGA-B137		3.6 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32		40	260		13 mm
M28F221-120YN1	STMicroelectronics
NAND01GR4M5BZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
NAND01GR3M4AZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149					Not Qualified
M8803F2Y-15T1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			131072 words	5			8	FLATPACK			.65 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQFP-G52		5.5 V	2.35 mm	10 mm	Not Qualified	1048576 bit	4.5 V						10 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.