STMicroelectronics Other Function Memory ICs 2,067

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Interleaved Burst Length Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

LRI64-SBN18/2GE

STMicroelectronics

MEMORY CIRCUIT

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

64 words

1

UNCASED CHIP

85 Cel

64X1

64

-20 Cel

UPPER

X-XUUC-N

3 V

64 bit

1.5 V

NAND256R4M2BZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

NAND01GW4M3BZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND256W4M4BZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M29W400BB70A6T

STMicroelectronics

M36W108AT120ZN1

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

48

VLGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BUTT

ASYNCHRONOUS

100 mA

1048576 words

FLASH+SRAM

3/3.3

8

GRID ARRAY, VERY THIN PROFILE

LGA48,6X8,40

Other Memory ICs

1 mm

70 Cel

1MX8

1M

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B48

3.6 V

1 mm

9.8 mm

Not Qualified

8388608 bit

2.7 V

ALSO CONTAINS 128K X 8 SRAM

e0

.00002 Amp

11.8 mm

120 ns

M28F221-120YN3

STMicroelectronics

M28F201-200XK3R

STMicroelectronics

M36W108B120ZN6

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

48

VLGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BUTT

ASYNCHRONOUS

100 mA

1048576 words

FLASH+SRAM

3/3.3

8

GRID ARRAY, VERY THIN PROFILE

LGA48,6X8,40

Other Memory ICs

1 mm

85 Cel

1MX8

1M

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B48

3.6 V

1 mm

9.8 mm

Not Qualified

8388608 bit

2.7 V

ALSO CONTAINS 128K X 8 SRAM

e0

.00002 Amp

11.8 mm

120 ns

LRI64-W4/1XX

STMicroelectronics

MEMORY CIRCUIT

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

64 words

1

UNCASED CHIP

85 Cel

64X1

64

-20 Cel

UPPER

X-XUUC-N

3 V

64 bit

1.5 V

NAND512W4M5CZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

STPAY-TIGER-14

STMicroelectronics

MEMORY CIRCUIT

M36L0T7050B0ZAQE

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

30 mA

8388608 words

FLASH+PSRAM

1.8,3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

8MX16

8M

-25 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B88

1.95 V

1.2 mm

8 mm

Not Qualified

134217728 bit

1.7 V

PSRAM IS ORGANIZED AS 2M X 16

e1

.000005 Amp

10 mm

90 ns

M36W432BG85ZA1

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

66

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

20 mA

2097152 words

3

FLASH+SRAM

3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA66,8X12,32

Other Memory ICs

.8 mm

70 Cel

2MX16

2M

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B66

3.3 V

1.4 mm

8 mm

Not Qualified

33554432 bit

2.7 V

STATIC RAM ORGANISED AS 256K X 16

e0

.00001 Amp

12 mm

85 ns

PSD8131V12MT

STMicroelectronics

MEMORY CIRCUIT

52

SQUARE

PLASTIC/EPOXY

YES

GULL WING

FLATPACK

QUAD

S-PQFP-G52

Not Qualified

NAND512R4M0CZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA107,10X14,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B107

Not Qualified

M36W108AT120ZM5

STMicroelectronics

MEMORY CIRCUIT

OTHER

48

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

100 mA

1048576 words

FLASH+SRAM

3/3.3

8

GRID ARRAY, LOW PROFILE

BGA48,6X8,40

Other Memory ICs

1 mm

85 Cel

1MX8

1M

-20 Cel

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

BOTTOM

R-PBGA-B48

3.6 V

1.35 mm

9.8 mm

Not Qualified

8388608 bit

2.7 V

ALSO CONTAINS 128K X 8 SRAM

e1

.00002 Amp

11.8 mm

120 ns

M36W432BG70ZA1

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

66

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

20 mA

2097152 words

3

FLASH+SRAM

3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA66,8X12,32

Other Memory ICs

.8 mm

70 Cel

2MX16

2M

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B66

3.3 V

1.4 mm

8 mm

Not Qualified

33554432 bit

2.7 V

STATIC RAM ORGANISED AS 256K X 16

e0

.00001 Amp

12 mm

70 ns

NAND512W3M2CZC5F

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

137

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

33554432 words

3

FLASH+SDRAM

3

8

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

32MX8

32M

-30 Cel

BOTTOM

R-PBGA-B137

3.6 V

1.4 mm

10.5 mm

Not Qualified

268435456 bit

2.5 V

LPSDRAM IS ORGANISED AS 16M X 32

40

260

13 mm

NAND512W4M0CZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA107,10X14,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B107

Not Qualified

NAND512W4M3AZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M36LLR8760B1ZAQF

STMicroelectronics

MEMORY CIRCUIT

OTHER

88

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

52 mA

16777216 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

16MX16

16M

-25 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B88

1.95 V

1.4 mm

8 mm

Not Qualified

268435456 bit

1.7 V

PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

e1

.00011 Amp

10 mm

NAND256R3M4CZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

ST1200-D10

STMicroelectronics

NAND01GR4M5AZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND512R4M5BZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

NAND512W3M2CZB5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

M36L0T7050B2ZAQ

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

FLASH+PSRAM

1.8,3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

R-PBGA-B88

2 V

1.2 mm

8 mm

Not Qualified

134217728 bit

1.7 V

PSRAM IS ORGANIZED AS 2M X 16

10 mm

85 ns

M36W216T85ZA6

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

66

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

85 Cel

1MX16

1M

-40 Cel

BOTTOM

R-PBGA-B66

3.3 V

1.4 mm

8 mm

Not Qualified

16777216 bit

2.7 V

ALSO CONTAINS 128K X 16 SRAM

12 mm

Z8038C6V

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

44

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

ASYNCHRONOUS

250 mA

128 words

5

5

8

CHIP CARRIER

LDCC44,.7SQ

FIFOs

1.27 mm

85 Cel

128X8

128

-40 Cel

TIN LEAD

QUAD

S-PQCC-J44

5.25 V

4.7 mm

4 MHz

16.5862 mm

Not Qualified

1024 bit

4.75 V

e0

16.5862 mm

NAND256R3M2CZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

M36W832B100ZA6

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

66

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

2097152 words

3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

85 Cel

2MX16

2M

-40 Cel

BOTTOM

R-PBGA-B66

3.3 V

1.4 mm

8 mm

Not Qualified

33554432 bit

2.7 V

ALSO CONTAINS 512K X 16 SRAM

12 mm

M36W832TE100ZA6T

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

66

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

35 mA

2097152 words

3

FLASH+SRAM

3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA66,8X12,32

Other Memory ICs

.8 mm

85 Cel

2MX16

2M

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B66

3.3 V

1.4 mm

8 mm

Not Qualified

33554432 bit

2.7 V

ALSO CONTAINS 512K X 16 SRAM

e0

.00002 Amp

12 mm

100 ns

MK41S80X12/20

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

ASYNCHRONOUS

120 mA

4096 words

5

5

4

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

4KX4

4K

0 Cel

TIN LEAD

DUAL

R-PDSO-J24

5.25 V

Not Qualified

16384 bit

4.75 V

e0

.12 Amp

12 ns

MK48H74N-35

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

125 mA

8192 words

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

Not Qualified

65536 bit

e0

.125 Amp

35 ns

NAND512R3M2CZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

137

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA137,10X15,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B137

Not Qualified

M36DR432A120ZA6T

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

66

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

40 mA

2097152 words

FLASH+SRAM

1.8/2

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA66,8X12,32

Other Memory ICs

.8 mm

85 Cel

2MX16

2M

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B66

2.2 V

1.4 mm

8 mm

Not Qualified

33554432 bit

1.65 V

THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM

e0

12 mm

120 ns

NAND512W3M4AZC5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3

FLASH+SDRAM

3

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M36W832BE85ZA1T

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

66

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

35 mA

2097152 words

3

FLASH+SRAM

3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA66,8X12,32

Other Memory ICs

.8 mm

70 Cel

2MX16

2M

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B66

3.6 V

1.4 mm

8 mm

Not Qualified

33554432 bit

2.7 V

SRAM IS ORGANISED AS 512K X 16

e0

.00002 Amp

12 mm

85 ns

M36D0R6040T0ZAIF

STMicroelectronics

MEMORY CIRCUIT

OTHER

67

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

26 mA

4194304 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA67,8X12,32

Other Memory ICs

.8 mm

85 Cel

4MX16

4M

-30 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B67

1.95 V

1.2 mm

8 mm

Not Qualified

67108864 bit

1.7 V

PSRAM IS ORGANIZED AS 1M X 16

e1

.00011 Amp

12 mm

70 ns

HCF40108BE

STMicroelectronics

INDUSTRIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

3/15

IN-LINE

DIP24,.6

Other Memory ICs

2.54 mm

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T24

Not Qualified

e0

MK48S74X35TR

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

150 mA

8192 words

5

5

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-J28

Not Qualified

65536 bit

e0

.15 Amp

35 ns

NAND256W3M4AZB5E

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

149

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

16777216 words

3

FLASH+SDRAM

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

16MX16

16M

-30 Cel

BOTTOM

R-PBGA-B149

3.6 V

1.2 mm

10 mm

Not Qualified

268435456 bit

2.5 V

LPSDRAM IS ORGANISED AS 16M X 16

40

260

13.5 mm

M36L0T7050T2ZAQE

STMicroelectronics

MEMORY CIRCUIT

COMMERCIAL EXTENDED

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

FLASH+PSRAM

1.8,3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Other Memory ICs

.8 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

R-PBGA-B88

2 V

1.2 mm

8 mm

Not Qualified

134217728 bit

1.7 V

PSRAM IS ORGANIZED AS 2M X 16

40

260

10 mm

85 ns

NAND01GR3M4CZC5F

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

M28F221-70XN6

STMicroelectronics

NAND01GR3M4CZB5E

STMicroelectronics

MEMORY CIRCUIT

OTHER

149

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

1.8

FLASH+SDRAM

1.8

GRID ARRAY, FINE PITCH

BGA149,12X16,32

Other Memory ICs

.8 mm

85 Cel

-30 Cel

BOTTOM

R-PBGA-B149

Not Qualified

STPAY-TIGER-11

STMicroelectronics

MEMORY CIRCUIT

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.