M36W432B85ZA6 by STMicroelectronics | Memory ICs

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	M36W432B85ZA6
Description	MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: FBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;
Datasheet	M36W432B85ZA6 Datasheet
In Stock	3,604

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Sub-Category:	Other Memory ICs
Surface Mount:	YES
Maximum Supply Current:	20 mA
Terminal Finish:	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
No. of Terminals:	66
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B66
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Maximum Operating Temperature:	85 Cel
Package Code:	FBGA
Mixed Memory Type:	FLASH+SRAM
Memory IC Type:	MEMORY CIRCUIT
JESD-609 Code:	e1
Minimum Operating Temperature:	-40 Cel
Qualification:	Not Qualified
Package Equivalence Code:	BGA66,8X12,32
Maximum Access Time:	85 ns
Nominal Supply Voltage / Vsup (V):	3
Terminal Pitch:	.8 mm
Temperature Grade:	INDUSTRIAL
Power Supplies (V):	3

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,604	-	-

BAT54C-7-F by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max forward voltage of 0.24V. Ideal for applications requiring fast reverse recovery time of 0.005 us, such as in small outline packages for surface mount technology at temperatures ranging from -65 to 150°C.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

MBR0520LT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring low power consumption in compact electronic devices. This single-configured diode is surface mountable and has a max repetitive peak reverse voltage of 20V, ideal for small outline package designs.

1N4148 by Texas Instruments is a rectifier diode with max reverse recovery time of 0.004 us and max forward voltage of 1V. Ideal for applications requiring low reverse current such as signal demodulation circuits. Operates at max temp of 200°C, making it suitable for high-temperature environments.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Minimum Operating Temperature: -55 Cel; Package Equivalence Code: TSSOP8,.19;

Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;