Xilinx Other Function Memory ICs 118

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
XC17S100XLPDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		781248 words		3.3		1	IN-LINE				2.54 mm	70 Cel		781248X1	781248	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	781248 bit	3 V	e3	30	250			9.3599 mm
XC17S20VOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		178144 words		5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		178144X1	178144	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm			3.9 mm	Not Qualified	178144 bit	4.75 V	e3	30	260			4.9 mm
XC17S40XLSOG20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		330696 words		3.3		1	SMALL OUTLINE				1.27 mm	70 Cel		330696X1	330696	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	330696 bit	3 V	e3	30	260			12.8 mm
XC17S100XLPDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		781248 words		3.3		1	IN-LINE				2.54 mm	85 Cel		781248X1	781248	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	781248 bit	3 V	e3	30	250			9.3599 mm
XC17S30SOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		247968 words		5		1	SMALL OUTLINE					85 Cel		247968X1	247968	-40 Cel		DUAL	R-PDSO-G8		5.5 V					Not Qualified	247968 bit	4.5 V	e0
XCCACEM32BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	240 mA	2097152 words		1.8	1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories	20	1.27 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B388	1	1.89 V	2.87 mm	1000000 Write/Erase Cycles		35 mm	Not Qualified	33554432 bit	1.71 V	e0			NOR TYPE		35 mm
XC17S10PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	10 mA	95008 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	95008X1	95008	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	95008 bit	4.5 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S50XLSOG20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		559232 words		3.3		1	SMALL OUTLINE				1.27 mm	70 Cel		559232X1	559232	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	559232 bit	3 V	e3	30	260			12.8 mm
XC17S50XLSO20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	559232 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	559232X1	559232	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		10 MHz	7.5 mm	Not Qualified	559232 bit	3 V	e0	30	225		.00005 Amp	12.8 mm
XC17S20PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	178144X1	178144	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	178144 bit	4.5 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S50XLSOG20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		559232 words		3.3		1	SMALL OUTLINE				1.27 mm	85 Cel		559232X1	559232	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	559232 bit	3 V	e3	30	260			12.8 mm
XC17S20VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	178144X1	178144	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	178144 bit	4.75 V	e0	30	225		.00005 Amp	4.9 mm
XC1736-PD8C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			10 mA	36288 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	36288X1	36288	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1				2.5 MHz		Not Qualified			e0	30	225		.0005 Amp		21
XC17S10PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	10 mA	95008 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	95008X1	95008	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	95008 bit	4.75 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S50XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	5 mA	559232 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	559232X1	559232	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	559232 bit	3 V	e0	30	225		.00005 Amp	9.3599 mm
XQR18V04VQ44N	Xilinx	CONFIGURATION MEMORY	OTHER	44	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		50 mA				2.5/3.3,3.3		FLATPACK	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	100 Cel				-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3			2000 Write/Erase Cycles	20 MHz		Not Qualified	4194304 bit		e0	30	240	NOR TYPE	.02 Amp
XC17S05XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	54544X1	54544	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	54544 bit	3 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S20VOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		178144 words		5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel		178144X1	178144	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm			3.9 mm	Not Qualified	178144 bit	4.5 V	e3	30	260			4.9 mm
XC17S10VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	10 mA	95008 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	95008X1	95008	0 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	95008 bit	4.75 V	e0	30	225		.00005 Amp	4.9 mm
XC17S30VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	247968X1	247968	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	247968 bit	4.5 V	e0	30	225		.00005 Amp	4.9 mm
XC17S40XLSO20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	330696 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	330696X1	330696	0 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		10 MHz	7.5 mm	Not Qualified	330696 bit	3 V	e0	30	225		.00005 Amp	12.8 mm
XC17S05PDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		53984 words		5		1	IN-LINE				2.54 mm	85 Cel		53984X1	53984	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm			7.62 mm	Not Qualified	53984 bit	4.5 V	e3	30	250			9.3599 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.