Xilinx Other Function Memory ICs 118

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length
XC17S30PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	247968X1	247968	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	247968 bit	4.5 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S150XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	1040128 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	1040128X1	1040128	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	1040128 bit	3 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S40PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	329312 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	329312X1	329312	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	329312 bit	4.5 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S20PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	178144X1	178144	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	178144 bit	4.75 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S10XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	95752X1	95752	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	95752 bit	3 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S30XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	249168X1	249168	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	249168 bit	3 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S40XLSO20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	330696 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	330696X1	330696	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		10 MHz	7.5 mm	Not Qualified	330696 bit	3 V	e0	30	225		.00005 Amp	12.8 mm
XC17S150XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	1040128 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	1040128X1	1040128	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	1040128 bit	3 V	e0	30	225		.00005 Amp	9.3599 mm
XC1736DDDG8M	Xilinx	MEMORY CIRCUIT	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		36288 words		5		1	IN-LINE				2.54 mm	125 Cel		36288X1	36288	-55 Cel		DUAL	R-GDIP-T8		5.5 V	5.08 mm			7.62 mm	Not Qualified	36288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED			10.16 mm
XC17S05VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	53984X1	53984	0 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	53984 bit	4.75 V	e0	30	225		.00005 Amp	4.9 mm
XC17S100XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	781248 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	781248X1	781248	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	781248 bit	3 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S150XLSOG20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		1040128 words		3.3		1	SMALL OUTLINE				1.27 mm	70 Cel		1040128X1	1040128	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	1040128 bit	3 V	e3	30	260			12.8 mm
XC17S50XLSO20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	559232 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	559232X1	559232	0 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		10 MHz	7.5 mm	Not Qualified	559232 bit	3 V	e0	30	225		.00005 Amp	12.8 mm
XC1765DDDG8M	Xilinx	MEMORY CIRCUIT	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		65536 words		5		1	IN-LINE				2.54 mm	125 Cel		64KX1	64K	-55 Cel	MATTE TIN	DUAL	R-GDIP-T8		5.5 V	5.08 mm			7.62 mm	Not Qualified	65536 bit	4.5 V	e3					10.16 mm
XC17S05XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	54544X1	54544	0 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	54544 bit	3 V	e0	30	225		.00005 Amp	4.9 mm
XC17S150XLSO20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	1040128 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	1040128X1	1040128	0 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		10 MHz	7.5 mm	Not Qualified	1040128 bit	3 V	e0	30	225		.00005 Amp	12.8 mm
XC17S05XLPDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		54544 words		3.3		1	IN-LINE				2.54 mm	85 Cel		54544X1	54544	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	54544 bit	3 V	e3	30	250			9.3599 mm
XC17S40PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	329312 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	329312X1	329312	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	329312 bit	4.75 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S05XLVOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		54544 words		3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel		54544X1	54544	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified	54544 bit	3 V	e3	30	260			4.9 mm
XC17S20VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	178144X1	178144	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	178144 bit	4.5 V	e0	30	225		.00005 Amp	4.9 mm
XAF01SVOG20Q	Xilinx	CONFIGURATION MEMORY	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	SERIAL		10 mA				1.8,1.8/3.3		SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories	20	.635 mm	125 Cel				-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3			20000 Write/Erase Cycles			Not Qualified	1048576 bit		e3	30	260	NOR TYPE	.001 Amp
XC17S20XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	179160X1	179160	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	179160 bit	3 V	e0	30	225		.00005 Amp	4.9 mm
XC17S30VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	247968X1	247968	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	247968 bit	4.75 V	e0	30	225		.00005 Amp	4.9 mm
XC17S05VOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		53984 words		5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel		53984X1	53984	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm			3.9 mm	Not Qualified	53984 bit	4.5 V	e3	30	260			4.9 mm
XC17S50XLPDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		559232 words		3.3		1	IN-LINE				2.54 mm	70 Cel		559232X1	559232	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	559232 bit	3 V	e3	30	250			9.3599 mm
XAF02SVOG20Q	Xilinx	CONFIGURATION MEMORY	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	SERIAL		10 mA				1.8,1.8/3.3		SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories	20	.635 mm	125 Cel				-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3			20000 Write/Erase Cycles			Not Qualified	2097152 bit		e3	30	260	NOR TYPE	.001 Amp
XAF04SVOG20Q	Xilinx	CONFIGURATION MEMORY	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	SERIAL		10 mA				1.8,1.8/3.3		SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories		.635 mm	125 Cel				-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3				33 MHz		Not Qualified	4194304 bit		e3	30	260	NOR TYPE	.001 Amp
XC17S30PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	247968X1	247968	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	247968 bit	4.75 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S05PDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		53984 words		5		1	IN-LINE				2.54 mm	70 Cel		53984X1	53984	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm			7.62 mm	Not Qualified	53984 bit	4.75 V	e3	30	250			9.3599 mm
XC17S10XLVOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	DIP8,.3	OTP ROMs		1.27 mm	85 Cel	3-STATE	95752X1	95752	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	95752 bit	3 V	e3	30	260		.00005 Amp	4.9 mm
XC17S40SO20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	329312 words	COMMON	5	5	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	329312X1	329312	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	5.5 V	2.65 mm		10 MHz	7.5 mm	Not Qualified	329312 bit	4.5 V	e0	30	225		.00005 Amp	12.8 mm
XC17S30XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	249168 bit	3 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S30XLVOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	249168 bit	3 V	e3	30	260		.00005 Amp	4.9 mm
XC17S20XLVOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		179160 words		3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel		179160X1	179160	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified	179160 bit	3 V	e3	30	260			4.9 mm
XC17S30XLPDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	249168 bit	3 V	e3	30	250		.00005 Amp	9.3599 mm
XC17S30VOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		247968 words		5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel		247968X1	247968	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm			3.9 mm	Not Qualified	247968 bit	4.5 V	e3	30	260			4.9 mm
XC17S30PDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		247968 words		5		1	IN-LINE				2.54 mm	70 Cel		247968X1	247968	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm			7.62 mm	Not Qualified	247968 bit	4.75 V	e3	30	250			9.3599 mm
XC17S40SO20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	329312 words	COMMON	5	5	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	329312X1	329312	0 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	5.25 V	2.65 mm		10 MHz	7.5 mm	Not Qualified	329312 bit	4.75 V	e0	30	225		.00005 Amp	12.8 mm
XC17S30XLPDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		249168 words		3.3		1	IN-LINE				2.54 mm	85 Cel		249168X1	249168	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	249168 bit	3 V	e3	30	250			9.3599 mm
XC17S05XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	54544X1	54544	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	54544 bit	3 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S30XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	249168 bit	3 V	e0	30	225		.00005 Amp	4.9 mm
XC17S05XLVOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		54544 words		3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		54544X1	54544	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified	54544 bit	3 V	e3	30	260			4.9 mm
XC17S50XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	559232 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	559232X1	559232	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	559232 bit	3 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S40XLSOG20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		330696 words		3.3		1	SMALL OUTLINE				1.27 mm	85 Cel		330696X1	330696	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	330696 bit	3 V	e3	30	260			12.8 mm
XC17S40PDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		329312 words		5		1	IN-LINE				2.54 mm	70 Cel		329312X1	329312	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm			7.62 mm	Not Qualified	329312 bit	4.75 V	e3	30	250			9.3599 mm
XC17S10XLPDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	IN-LINE	TSOP8,.25	OTP ROMs		2.54 mm	70 Cel	3-STATE	95752X1	95752	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	95752 bit	3 V	e3	30	250		.00005 Amp	9.3599 mm
XC17S40SOG20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		329312 words		5		1	SMALL OUTLINE				1.27 mm	85 Cel		329312X1	329312	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	5.5 V	2.65 mm			7.5 mm	Not Qualified	329312 bit	4.5 V	e3	30	260			12.8 mm
XC17S05VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	53984X1	53984	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	53984 bit	4.5 V	e0	30	225		.00005 Amp	4.9 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.