DIP OTP ROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27C1024-80B1	STMicroelectronics	OTP ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.5 V		15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	52.18 mm	80 ns
M27C4001-15B1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	4.83 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	42.035 mm	100 ns
M27C512-60XB1	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		e0			.0001 Amp	36.83 mm	60 ns
M27C1001-45B3	STMicroelectronics	OTP ROM	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	42.035 mm	45 ns
M27C512-12B1X	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	37.085 mm	120 ns
M27C1001-80B3	STMicroelectronics	OTP ROM	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	42.035 mm	80 ns
M27C1001-25B3	STMicroelectronics	OTP ROM	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	42.035 mm	250 ns
M27C160-90B1	STMicroelectronics	OTP ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	CONFIGURABLE AS 1M X 16	e3			.0001 Amp	52.455 mm	90 ns
M27C400-80XB6	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6	8	OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T40	5.25 V		15.24 mm	Not Qualified	4194304 bit	4.75 V		e0			.0001 Amp	52.18 mm	80 ns
M27C256B-80B1	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	36.83 mm	80 ns	12.75
M27C4002-15XB1	STMicroelectronics	OTP ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.25 V		15.24 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	52.18 mm	150 ns
M27C202-90B3	STMicroelectronics	OTP ROM	AUTOMOTIVE	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	128KX16	128K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.5 V		15.24 mm	Not Qualified	2097152 bit	4.5 V		e3			.0001 Amp	52.18 mm	90 ns
M27C256B-80XB3	STMicroelectronics	OTP ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.25 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3			.0001 Amp	36.83 mm	80 ns	12.75
M27C2001-70B1X	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e3			.0001 Amp	41.91 mm	70 ns
M27C4001-55XB6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.25 V	4.83 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	42.035 mm	55 ns
M27C2001-15B1TR	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE				2.54 mm	70 Cel		256KX8	256K	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T32	5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e3				41.91 mm	150 ns
M27C2001-80XB1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.25 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V		e3			.0001 Amp	41.91 mm	80 ns
M27C512-80B1	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.83 mm	80 ns
M27C400-70XB6	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6	8	OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T40	5.25 V		15.24 mm	Not Qualified	4194304 bit	4.75 V		e0			.0001 Amp	52.18 mm	70 ns
M27C4001-45XB6X	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.25 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	41.91 mm	45 ns
M27C1024-70XB7	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.25 V		15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	52.18 mm	70 ns
M27C4002-70B1X	STMicroelectronics	OTP ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.5 V		15.24 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	52.18 mm	70 ns
M27C4002-45XB6X	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.25 V		15.24 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	52.18 mm	45 ns
M27C800-50B1	STMicroelectronics	OTP ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e3			.00005 Amp	52.455 mm	50 ns
M27C4002-60B1X	STMicroelectronics	OTP ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.5 V		15.24 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	52.18 mm	60 ns
M27C512-70XB6X	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-PDIP-T28	5.25 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	37.085 mm	70 ns
M27C1001-20B3	STMicroelectronics	OTP ROM	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	42.035 mm	200 ns
M27C4002-20B1TR	STMicroelectronics	OTP ROM		40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		5		16	IN-LINE	DIP40,.6			2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-PDIP-T40	5.5 V	4.45 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	SEATED HGT-NOM				.0001 Amp	52.18 mm	200 ns	5
M27C4001-80B1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	4.83 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	42.035 mm	80 ns
M27C512-12B3E	STMicroelectronics	OTP ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	36.83 mm	120 ns
M27C1024-45XB1X	STMicroelectronics	OTP ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.25 V		15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	52.18 mm	45 ns
M27C1024-15B7	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.5 V		15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	52.18 mm	100 ns
M27C4001-80XB1X	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.25 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	41.91 mm	80 ns
M27C512-15XB6E	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		e3			.0001 Amp	36.83 mm	150 ns
M27C4002-15B1	STMicroelectronics	OTP ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.5 V		15.24 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	52.18 mm	150 ns
M27C256B-80XB1	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.25 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3			.0001 Amp	36.83 mm	80 ns	12.75
M27C1001-35B6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	42.035 mm	35 ns
M27C2001-10B6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e3			.0001 Amp	41.91 mm	100 ns
M27C4001-45XB6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.25 V	4.83 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	42.035 mm	45 ns
M27C2001-15XB1X	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.25 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V		e3			.0001 Amp	41.91 mm	150 ns
M27C1001-12XB6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.25 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	42.035 mm	120 ns
M27C4002-80B6	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.5 V		15.24 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	52.18 mm	80 ns
M27C256B-12XB6	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.25 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3			.0001 Amp	36.83 mm	120 ns	12.75
M27C512-45B3E	STMicroelectronics	OTP ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	36.83 mm	45 ns
M27C202-150B6	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		16	IN-LINE				2.54 mm	85 Cel		128KX16	128K	-40 Cel		DUAL	R-PDIP-T40	5.5 V		15.24 mm	Not Qualified	2097152 bit	4.5 V						52.18 mm	100 ns
M27C800-120XB1	STMicroelectronics	OTP ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.25 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.75 V		e3			.00005 Amp	52.455 mm	120 ns
M27C4002-12B1TR	STMicroelectronics	OTP ROM		40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		5		16	IN-LINE	DIP40,.6			2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-PDIP-T40	5.5 V	4.45 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	SEATED HGT-NOM				.0001 Amp	52.18 mm	120 ns	5
M27C256B-80B1X	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	37.085 mm	80 ns	12.75

OTP ROM

OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.

OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.

OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.