DIP OTP ROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27C160-50XB6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42		5.25 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V		e3			.0001 Amp	52.455 mm	50 ns
M27C4002-20XB1	STMicroelectronics	OTP ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	DUAL	R-PDIP-T40		5.25 V		15.24 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	52.18 mm	200 ns
M27C512-15XB6X	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-PDIP-T28		5.25 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	37.085 mm	150 ns
M27C256B-10B6X	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	37.085 mm	100 ns	12.75
M27C1001-60B1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32		5.5 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	42.035 mm	60 ns
M27C322-100P3	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	5	5	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e3			.0001 Amp	52.455 mm	100 ns
M27C1024-35B1X	STMicroelectronics	OTP ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	MATTE TIN	DUAL	R-PDIP-T40		5.5 V		15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	52.18 mm	35 ns
M27C801-120B6X	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e3			.0001 Amp	41.91 mm	100 ns
M27C801-45B6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32		5.5 V	4.83 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e3			.0001 Amp	42.035 mm	45 ns
M27C2001-55XB6X	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32		5.25 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V		e3			.0001 Amp	41.91 mm	55 ns
M27C801-100B1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	MATTE TIN	DUAL	R-PDIP-T32		5.5 V	4.83 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e3			.0001 Amp	42.035 mm	100 ns
M27C4002-80XB1TR	STMicroelectronics	OTP ROM		40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		5		16	IN-LINE	DIP40,.6			2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-PDIP-T40		5.5 V	4.45 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	SEATED HGT-NOM				.0001 Amp	52.18 mm	80 ns	5
M27C2001-55B1X	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e3			.0001 Amp	41.91 mm	55 ns
M27C1024-35B7X	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T40		5.5 V		15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	52.18 mm	35 ns
M27C4002-10B1X	STMicroelectronics	OTP ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	DUAL	R-PDIP-T40		5.5 V		15.24 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	52.18 mm	100 ns
M27C405-90B1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	41.91 mm	90 ns
M27C4002-60XB1TR	STMicroelectronics	OTP ROM		40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		5		16	IN-LINE	DIP40,.6			2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-PDIP-T40		5.5 V	4.45 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	SEATED HGT-NOM				.0001 Amp	52.18 mm	60 ns	5
M27C1024-10XB7X	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T40		5.25 V		15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	52.18 mm	100 ns
M27C801-45B1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	MATTE TIN	DUAL	R-PDIP-T32		5.5 V	4.83 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e3			.0001 Amp	42.035 mm	45 ns
M27C4001-35XB6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32		5.25 V	4.83 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	42.035 mm	35 ns
M27C4002-12B6TR	STMicroelectronics	OTP ROM		40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		5		16	IN-LINE	DIP40,.6			2.54 mm	85 Cel		256KX16	256K	-40 Cel		DUAL	R-PDIP-T40		5.5 V	4.45 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	SEATED HGT-NOM				.0001 Amp	52.18 mm	120 ns	5
M27C256B-12XB6X	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28		5.25 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3			.0001 Amp	37.085 mm	120 ns	12.75
M27C1024-45B3	STMicroelectronics	OTP ROM	AUTOMOTIVE	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T40		5.5 V		15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	52.18 mm	45 ns
M27C1001-35B1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32		5.5 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	42.035 mm	35 ns
M27C256B-90XB7X	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				2.54 mm	105 Cel		32KX8	32K	-40 Cel		DUAL	R-PDIP-T28		5.25 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.75 V						37.085 mm	90 ns
M27C160-70XB6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42		5.25 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V	CONFIGURABLE AS 1M X 16	e3			.0001 Amp	52.455 mm	70 ns
M27C1024-12B6	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T40		5.5 V		15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	52.18 mm	100 ns
M27C1024-20B7X	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T40		5.5 V		15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	52.18 mm	100 ns
WS57C45-35S	STMicroelectronics	OTP ROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	82 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3		EPROMs	2.54 mm	70 Cel	REGISTERED	2KX8	2K	0 Cel	MATTE TIN	DUAL	R-PDIP-T24	1	5.5 V	4.32 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e3			.02 Amp	32.005 mm	15 ns	13.5
M27C1001-10B3	STMicroelectronics	OTP ROM	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32		5.5 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	42.035 mm	100 ns
M27C1001-10XB1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32		5.25 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	42.035 mm	100 ns
M27C4001-15XB6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32		5.25 V	4.83 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	42.035 mm	100 ns
M27C2001-55B1TR	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE				2.54 mm	70 Cel		256KX8	256K	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e3				41.91 mm	55 ns
M27C256B-15XB7	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28					Not Qualified	262144 bit			e0			.0001 Amp		150 ns	12.75
M27C2001-25B1X	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e3			.0001 Amp	41.91 mm	150 ns
M27C256B-20XB7X	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				2.54 mm	105 Cel		32KX8	32K	-40 Cel		DUAL	R-PDIP-T28		5.25 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.75 V						37.085 mm	150 ns
M27C256B-80XB3X	STMicroelectronics	OTP ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28		5.25 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3			.0001 Amp	37.085 mm	80 ns	12.75
M27C160-50XB1	STMicroelectronics	OTP ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	R-PDIP-T42		5.25 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V		e3			.0001 Amp	52.455 mm	50 ns
M27C801-150B6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32		5.5 V	4.83 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e3			.0001 Amp	42.035 mm	150 ns
M27C512-15B6X	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-PDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	37.085 mm	150 ns
M27C256B-10B6	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	36.83 mm	100 ns	12.75
M27C1024-20XB1	STMicroelectronics	OTP ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	MATTE TIN	DUAL	R-PDIP-T40		5.25 V		15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	52.18 mm	100 ns
M27C256B-80B3X	STMicroelectronics	OTP ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	37.085 mm	80 ns	12.75
M27C512-12B6X	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-PDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	37.085 mm	120 ns
M27C256B-15XB7X	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				2.54 mm	105 Cel		32KX8	32K	-40 Cel		DUAL	R-PDIP-T28		5.25 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.75 V						37.085 mm	150 ns
M27C1001-60XB6X	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32		5.25 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	41.91 mm	60 ns
M27C1001-35XB6X	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32		5.25 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	41.91 mm	35 ns
M27C512-70XB3X	STMicroelectronics	OTP ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-PDIP-T28		5.25 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	37.085 mm	70 ns

OTP ROM

OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.

OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.

OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.