DIP OTP ROM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time Programming Voltage (V)

M27V512-200B1

STMicroelectronics

OTP ROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

10 mA

65536 words

COMMON

3.3

3.3

8

IN-LINE

DIP28,.6

OTP ROMs

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

3.6 V

5.08 mm

15.24 mm

Not Qualified

524288 bit

3 V

e0

.00001 Amp

37.085 mm

200 ns

TS27C64A-15CP

STMicroelectronics

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.6

OTP ROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T28

Not Qualified

65536 bit

e0

150 ns

12.5

M27V101-120B6TR

STMicroelectronics

OTP ROM

INDUSTRIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

3.3

8

IN-LINE

2.54 mm

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDIP-T32

3.6 V

5.08 mm

15.24 mm

Not Qualified

1048576 bit

3 V

41.91 mm

120 ns

M27V256-150BN1

STMicroelectronics

OTP ROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

IN-LINE

70 Cel

32KX8

32K

0 Cel

DUAL

R-PDIP-T28

3.6 V

Not Qualified

262144 bit

3 V

150 ns

M27V512-150B6

STMicroelectronics

OTP ROM

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

10 mA

65536 words

COMMON

3.3

3.3

8

IN-LINE

DIP28,.6

OTP ROMs

2.54 mm

85 Cel

3-STATE

64KX8

64K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T28

3.6 V

5.08 mm

15.24 mm

Not Qualified

524288 bit

3 V

e0

.00001 Amp

37.085 mm

150 ns

M27V322-100XP1

STMicroelectronics

OTP ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

2097152 words

COMMON

3.3

3.3

16

IN-LINE

DIP42,.6

OTP ROMs

2.54 mm

70 Cel

3-STATE

2MX16

2M

0 Cel

MATTE TIN

DUAL

R-PDIP-T42

3.465 V

5.08 mm

15.24 mm

Not Qualified

33554432 bit

3.135 V

e3

.00006 Amp

52.455 mm

100 ns

M27V401-180B6TR

STMicroelectronics

OTP ROM

INDUSTRIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

3.3

8

IN-LINE

2.54 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDIP-T32

3.6 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

3 V

41.91 mm

180 ns

M27V512-100B6

STMicroelectronics

OTP ROM

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

10 mA

65536 words

COMMON

3.3

3.3

8

IN-LINE

DIP28,.6

OTP ROMs

2.54 mm

85 Cel

3-STATE

64KX8

64K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T28

3.6 V

5.08 mm

15.24 mm

Not Qualified

524288 bit

3 V

e0

.00001 Amp

37.085 mm

100 ns

M87C257-15XB1

STMicroelectronics

OTP ROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

OTP ROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.25 V

15.24 mm

Not Qualified

262144 bit

4.75 V

e0

.0002 Amp

36.83 mm

150 ns

M27V201-150B6

STMicroelectronics

OTP ROM

INDUSTRIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

262144 words

COMMON

3.3

3.3

8

IN-LINE

DIP32,.6

OTP ROMs

2.54 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

MATTE TIN

DUAL

R-PDIP-T32

3.6 V

5.08 mm

15.24 mm

Not Qualified

2097152 bit

3 V

e3

.00002 Amp

41.91 mm

150 ns

M27W101-200B6TR

STMicroelectronics

OTP ROM

INDUSTRIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

3

8

IN-LINE

2.54 mm

85 Cel

128KX8

128K

-40 Cel

Matte Tin (Sn)

DUAL

R-PDIP-T32

3.6 V

5.08 mm

15.24 mm

Not Qualified

1048576 bit

2.7 V

e3

41.91 mm

100 ns

M27V101-120B1

STMicroelectronics

OTP ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

131072 words

COMMON

3.3

3.3

8

IN-LINE

DIP32,.6

OTP ROMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-PDIP-T32

3.6 V

5.08 mm

15.24 mm

Not Qualified

1048576 bit

3 V

e0

.00002 Amp

41.91 mm

120 ns

M27V256-90B1

STMicroelectronics

OTP ROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

10 mA

32768 words

COMMON

3.3

3.3

8

IN-LINE

DIP28,.6

OTP ROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

3.6 V

5.08 mm

15.24 mm

Not Qualified

262144 bit

3 V

e0

.00001 Amp

37.085 mm

90 ns

12.75

M27W512-100B6E

STMicroelectronics

OTP ROM

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

65536 words

COMMON

3

3/3.3

8

IN-LINE

DIP28,.6

OTP ROMs

2.54 mm

85 Cel

3-STATE

64KX8

64K

-40 Cel

MATTE TIN

DUAL

R-PDIP-T28

3.6 V

5.08 mm

15.24 mm

Not Qualified

524288 bit

2.7 V

e3

.000015 Amp

36.83 mm

100 ns

M27V800-100B6

STMicroelectronics

INDUSTRIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

30 mA

1048576 words

COMMON

3/3.3

8

IN-LINE

DIP42,.6

OTP ROMs

2.54 mm

85 Cel

3-STATE

1MX8

1M

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T42

Not Qualified

8388608 bit

e0

.000015 Amp

100 ns

M27W512-80B6

STMicroelectronics

OTP ROM

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

65536 words

COMMON

3

3/3.3

8

IN-LINE

DIP28,.6

OTP ROMs

2.54 mm

85 Cel

3-STATE

64KX8

64K

-40 Cel

MATTE TIN

DUAL

R-PDIP-T28

3.6 V

5.08 mm

15.24 mm

Not Qualified

524288 bit

2.7 V

ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V

e3

.000015 Amp

36.83 mm

80 ns

M27V402-200B1

STMicroelectronics

OTP ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

3.3

3.3

16

IN-LINE

DIP40,.6

OTP ROMs

2.54 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

TIN LEAD

DUAL

R-PDIP-T40

3.63 V

15.24 mm

Not Qualified

4194304 bit

2.97 V

e0

.00002 Amp

52.18 mm

200 ns

M27V256-120BN1

STMicroelectronics

OTP ROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

IN-LINE

70 Cel

32KX8

32K

0 Cel

DUAL

R-PDIP-T28

3.6 V

Not Qualified

262144 bit

3 V

120 ns

M27V256-90B1TR

STMicroelectronics

OTP ROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

IN-LINE

2.54 mm

70 Cel

32KX8

32K

0 Cel

DUAL

R-PDIP-T28

3.6 V

5.08 mm

15.24 mm

Not Qualified

262144 bit

3 V

36.83 mm

90 ns

M27V160-100XB1

STMicroelectronics

OTP ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

1048576 words

COMMON

3.3

3.3

16

IN-LINE

DIP42,.6

8

OTP ROMs

2.54 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

MATTE TIN

DUAL

R-PDIP-T42

3.465 V

5.08 mm

15.24 mm

Not Qualified

16777216 bit

3.135 V

CONFIGURABLE AS 1M X 16

e3

.00006 Amp

52.455 mm

100 ns

M27W101-200B6

STMicroelectronics

OTP ROM

INDUSTRIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

3

8

IN-LINE

2.54 mm

85 Cel

128KX8

128K

-40 Cel

MATTE TIN

DUAL

R-PDIP-T32

3.6 V

5.08 mm

15.24 mm

Not Qualified

1048576 bit

2.7 V

e3

41.91 mm

100 ns

M27W400-120XB6

STMicroelectronics

OTP ROM

INDUSTRIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

8

IN-LINE

16

2.54 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDIP-T40

3.78 V

15.24 mm

Not Qualified

4194304 bit

2.565 V

52.18 mm

120 ns

M27V801-150P1TR

STMicroelectronics

OTP ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

IN-LINE

2.54 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDIP-T32

3.6 V

5.08 mm

15.24 mm

Not Qualified

8388608 bit

3 V

41.91 mm

150 ns

M27V402-150B1

STMicroelectronics

OTP ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

3.3

3.3

16

IN-LINE

DIP40,.6

OTP ROMs

2.54 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

TIN LEAD

DUAL

R-PDIP-T40

3.63 V

15.24 mm

Not Qualified

4194304 bit

2.97 V

e0

.00002 Amp

52.18 mm

150 ns

ST27128A-20CP

STMicroelectronics

OTP ROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

COMMON

5

5

8

IN-LINE

DIP28,.6

OTP ROMs

2.54 mm

70 Cel

3-STATE

16KX8

16K

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

15.24 mm

Not Qualified

131072 bit

4.5 V

e0

36.83 mm

200 ns

12.5

M27W102-150B6

STMicroelectronics

OTP ROM

INDUSTRIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

65536 words

COMMON

3.3

3/3.3

16

IN-LINE

DIP40,.6

OTP ROMs

2.54 mm

85 Cel

3-STATE

64KX16

64K

-40 Cel

MATTE TIN

DUAL

R-PDIP-T40

3.6 V

15.24 mm

Not Qualified

1048576 bit

2.7 V

e3

.000015 Amp

52.18 mm

100 ns

M27V402-150B4TR

STMicroelectronics

OTP ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

262144 words

3.3

16

IN-LINE

2.54 mm

70 Cel

256KX16

256K

-20 Cel

DUAL

R-PDIP-T40

3.63 V

15.24 mm

Not Qualified

4194304 bit

2.97 V

52.18 mm

150 ns

M27V256-200BN6

STMicroelectronics

OTP ROM

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

IN-LINE

85 Cel

32KX8

32K

-40 Cel

DUAL

R-PDIP-T28

3.6 V

Not Qualified

262144 bit

3 V

200 ns

M27V322-120P1

STMicroelectronics

OTP ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

2097152 words

COMMON

3.3

3.3

16

IN-LINE

DIP42,.6

OTP ROMs

2.54 mm

70 Cel

3-STATE

2MX16

2M

0 Cel

MATTE TIN

DUAL

R-PDIP-T42

3.6 V

5.08 mm

15.24 mm

Not Qualified

33554432 bit

3 V

e3

.00006 Amp

52.455 mm

120 ns

ST2764A-18XCP

STMicroelectronics

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.6

OTP ROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T28

Not Qualified

65536 bit

e0

180 ns

12.5

M27V256-90B6TR

STMicroelectronics

OTP ROM

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

IN-LINE

2.54 mm

85 Cel

32KX8

32K

-40 Cel

DUAL

R-PDIP-T28

3.6 V

5.08 mm

15.24 mm

Not Qualified

262144 bit

3 V

36.83 mm

90 ns

M87C257-15B1

STMicroelectronics

OTP ROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

OTP ROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

15.24 mm

Not Qualified

262144 bit

4.5 V

e0

.0002 Amp

36.83 mm

150 ns

M27V101-90B1TR

STMicroelectronics

OTP ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

3.3

8

IN-LINE

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

DUAL

R-PDIP-T32

3.6 V

5.08 mm

15.24 mm

Not Qualified

1048576 bit

3 V

41.91 mm

90 ns

M27V256-120BN6

STMicroelectronics

OTP ROM

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

IN-LINE

85 Cel

32KX8

32K

-40 Cel

DUAL

R-PDIP-T28

3.6 V

Not Qualified

262144 bit

3 V

120 ns

M27V401-200B6TR

STMicroelectronics

OTP ROM

INDUSTRIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

3.3

8

IN-LINE

2.54 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDIP-T32

3.6 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

3 V

41.91 mm

200 ns

M27V800-150B6

STMicroelectronics

INDUSTRIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

30 mA

1048576 words

COMMON

3/3.3

8

IN-LINE

DIP42,.6

OTP ROMs

2.54 mm

85 Cel

3-STATE

1MX8

1M

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T42

Not Qualified

8388608 bit

e0

.000015 Amp

150 ns

M27W202-120B6

STMicroelectronics

OTP ROM

INDUSTRIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

20 mA

131072 words

COMMON

3.3

3/3.3

16

IN-LINE

DIP40,.6

OTP ROMs

2.54 mm

85 Cel

3-STATE

128KX16

128K

-40 Cel

MATTE TIN

DUAL

R-PDIP-T40

3.6 V

15.24 mm

Not Qualified

2097152 bit

2.7 V

e3

.000015 Amp

52.18 mm

120 ns

M27V800-100XB1

STMicroelectronics

OTP ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

3.3

3.3

16

IN-LINE

DIP42,.6

8

OTP ROMs

2.54 mm

70 Cel

3-STATE

512KX16

512K

0 Cel

TIN LEAD

DUAL

R-PDIP-T42

3.465 V

5.08 mm

15.24 mm

Not Qualified

8388608 bit

3.135 V

CONFIGURABLE AS 512K X 16

e0

.00002 Amp

52.455 mm

100 ns

M27V402-200B5

STMicroelectronics

OTP ROM

OTHER

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

3.3

3.3

16

IN-LINE

DIP40,.6

OTP ROMs

2.54 mm

85 Cel

3-STATE

256KX16

256K

-20 Cel

TIN LEAD

DUAL

R-PDIP-T40

3.63 V

15.24 mm

Not Qualified

4194304 bit

2.97 V

e0

.00002 Amp

52.18 mm

200 ns

M27V401-180B1

STMicroelectronics

OTP ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

524288 words

COMMON

3.3

3.3

8

IN-LINE

DIP32,.6

OTP ROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-PDIP-T32

3.6 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

3 V

e0

.00002 Amp

41.91 mm

180 ns

TS27C64A-20CP

STMicroelectronics

OTP ROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.6

OTP ROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

15.24 mm

Not Qualified

65536 bit

4.5 V

e0

.0001 Amp

36.83 mm

200 ns

12.5

M27V402-150B6TR

STMicroelectronics

OTP ROM

INDUSTRIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

262144 words

3.3

16

IN-LINE

2.54 mm

85 Cel

256KX16

256K

-40 Cel

DUAL

R-PDIP-T40

3.63 V

15.24 mm

Not Qualified

4194304 bit

2.97 V

52.18 mm

150 ns

M27V256-90BN1

STMicroelectronics

OTP ROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

IN-LINE

70 Cel

32KX8

32K

0 Cel

DUAL

R-PDIP-T28

3.6 V

Not Qualified

262144 bit

3 V

90 ns

ST27C256-20VP

STMicroelectronics

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

OTP ROMs

2.54 mm

85 Cel

3-STATE

32KX8

32K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T28

Not Qualified

262144 bit

e0

.00001 Amp

200 ns

12.5

M27W400-120XB6TR

STMicroelectronics

OTP ROM

INDUSTRIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

8

IN-LINE

16

2.54 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDIP-T40

3.78 V

15.24 mm

Not Qualified

4194304 bit

2.565 V

52.18 mm

120 ns

M27V102-200B1

STMicroelectronics

OTP ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

65536 words

COMMON

3.3

3.3

16

IN-LINE

DIP40,.6

OTP ROMs

2.54 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-PDIP-T40

3.63 V

15.24 mm

Not Qualified

1048576 bit

2.97 V

e0

.00002 Amp

52.18 mm

200 ns

M27V256-100B6

STMicroelectronics

OTP ROM

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

10 mA

32768 words

COMMON

3.3

3.3

8

IN-LINE

DIP28,.6

OTP ROMs

2.54 mm

85 Cel

3-STATE

32KX8

32K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T28

3.6 V

5.08 mm

15.24 mm

Not Qualified

262144 bit

3 V

e0

.00001 Amp

37.085 mm

100 ns

12.75

M27V201-120B1

STMicroelectronics

OTP ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

262144 words

COMMON

3.3

3.3

8

IN-LINE

DIP32,.6

OTP ROMs

2.54 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

MATTE TIN

DUAL

R-PDIP-T32

3.6 V

5.08 mm

15.24 mm

Not Qualified

2097152 bit

3 V

e3

.00002 Amp

41.91 mm

120 ns

OTP ROM

OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.

OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.

OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.