DIP OTP ROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27V256-100B1TR	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	IN-LINE				2.54 mm	70 Cel		32KX8	32K	0 Cel		DUAL	R-PDIP-T28	3.6 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	3 V				36.83 mm	100 ns
M27V402-120B5	STMicroelectronics	OTP ROM	OTHER	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-PDIP-T40	3.63 V		15.24 mm	Not Qualified	4194304 bit	2.97 V		e0	.00002 Amp	52.18 mm	120 ns
M27W801-150B6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	1048576 words	COMMON	3	3/3.3	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	3.6 V	4.83 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V		e3	.000015 Amp	42.035 mm	120 ns
M27V102-200B6	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	65536 words	COMMON	3.3	3.3	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T40	3.63 V		15.24 mm	Not Qualified	1048576 bit	2.97 V		e0	.00002 Amp	52.18 mm	200 ns
M27V402-120B1TR	STMicroelectronics	OTP ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	IN-LINE				2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-PDIP-T40	3.63 V		15.24 mm	Not Qualified	4194304 bit	2.97 V				52.18 mm	120 ns
ST27C256-20CP	STMicroelectronics		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				Not Qualified	262144 bit			e0	.00001 Amp		200 ns	12.5
M27V402-200B6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	IN-LINE				2.54 mm	85 Cel		256KX16	256K	-40 Cel		DUAL	R-PDIP-T40	3.63 V		15.24 mm	Not Qualified	4194304 bit	2.97 V				52.18 mm	200 ns
M27V101-150B6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	IN-LINE				2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel		DUAL	R-PDIP-T32	3.6 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	3 V				41.91 mm	150 ns
ST27C256-25VP	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			24 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				Not Qualified	262144 bit			e0	.00001 Amp		250 ns	12.5
M27V401-120B1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3.3	3.3	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32	3.6 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	3 V		e0	.00002 Amp	41.91 mm	120 ns
M27W256-100B6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3		8	IN-LINE				2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDIP-T28	3.6 V		15.24 mm	Not Qualified	262144 bit	2.7 V				36.83 mm	100 ns
M27V160-150B1	STMicroelectronics	OTP ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	R-PDIP-T42	3.63 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.97 V	CONFIGURABLE AS 1M X 16	e3	.00006 Amp	52.455 mm	150 ns
M27V160-100XB6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	3.465 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	3.135 V		e3	.00006 Amp	52.455 mm	100 ns
M27W201-100B6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words				8	IN-LINE				2.54 mm	85 Cel		256KX8	256K	-40 Cel		DUAL	R-PDIP-T32	3.6 V		15.24 mm		2097152 bit	2.7 V				42.035 mm	100 ns
ST27256-25CP	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	5.5 V		15.24 mm	Not Qualified	262144 bit	4.5 V		e0		36.83 mm	250 ns	12.5
ST27128A-30CP	STMicroelectronics		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				Not Qualified	131072 bit			e0			300 ns	12.5
M27V256-120B6	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	32768 words	COMMON	3.3	3.3	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3.6 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	3 V		e0	.00001 Amp	37.085 mm	120 ns	12.75
M27W201-80B6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3	3/3.3	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	3.6 V	4.83 mm	15.24 mm	Not Qualified	2097152 bit	2.7 V	ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V	e3	.000015 Amp	42.035 mm	80 ns
M27W256-200B6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3		8	IN-LINE				2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDIP-T28	3.6 V		15.24 mm	Not Qualified	262144 bit	2.7 V				36.83 mm	80 ns
M27V102-120BN6	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	IN-LINE					85 Cel		64KX16	64K	-40 Cel		DUAL	R-PDIP-T28	3.6 V			Not Qualified	1048576 bit	3 V					120 ns
M27V322-100XP6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	3.465 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	3.135 V		e3	.00006 Amp	52.455 mm	100 ns
M27V801-120B1	STMicroelectronics		COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			15 mA	1048576 words	COMMON	3.3	3.3	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32				Not Qualified	8388608 bit			e0	.00002 Amp		120 ns
M27V322-120XP1	STMicroelectronics	OTP ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	MATTE TIN	DUAL	R-PDIP-T42	3.465 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	3.135 V		e3	.00006 Amp	52.455 mm	120 ns
M27V102-100B1	STMicroelectronics	OTP ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	65536 words	COMMON	3.3	3.3	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40	3.63 V		15.24 mm	Not Qualified	1048576 bit	2.97 V		e0	.00002 Amp	52.18 mm	100 ns
ST27256-20CP	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	5.5 V		15.24 mm	Not Qualified	262144 bit	4.5 V		e0		36.83 mm	200 ns	12.5
M27W801-200B6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		3		8	IN-LINE				2.54 mm	85 Cel		1MX8	1M	-40 Cel		DUAL	R-PDIP-T32	3.6 V	4.83 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V				42.035 mm	120 ns
M27W256-120B6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3		8	IN-LINE				2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDIP-T28	3.6 V		15.24 mm	Not Qualified	262144 bit	2.7 V				36.83 mm	80 ns
TS27C64A-30CP	STMicroelectronics		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				Not Qualified	65536 bit			e0			300 ns	12.5
M27V102-200BN6	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	IN-LINE					85 Cel		64KX16	64K	-40 Cel		DUAL	R-PDIP-T28	3.6 V			Not Qualified	1048576 bit	3 V					200 ns
M27W402-200B6	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	COMMON	3	3/3.3	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T40	3.6 V		15.24 mm	Not Qualified	4194304 bit	2.7 V		e3	.000015 Amp	52.18 mm	120 ns
M27V402-200B4TR	STMicroelectronics	OTP ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	IN-LINE				2.54 mm	70 Cel		256KX16	256K	-20 Cel		DUAL	R-PDIP-T40	3.63 V		15.24 mm	Not Qualified	4194304 bit	2.97 V				52.18 mm	200 ns
M27W801-100B6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		3		8	IN-LINE				2.54 mm	85 Cel		1MX8	1M	-40 Cel		DUAL	R-PDIP-T32	3.6 V	4.83 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V				42.035 mm	100 ns
ST27256-20XCP	STMicroelectronics		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				Not Qualified	262144 bit			e0			200 ns	12.5
ST27C256-17TP	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			35 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				Not Qualified	262144 bit			e0	.00001 Amp		170 ns	12.5
M27V102-100BN6	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	IN-LINE					85 Cel		64KX16	64K	-40 Cel		DUAL	R-PDIP-T28	3.6 V			Not Qualified	1048576 bit	3 V					100 ns
M27V402-150B1TR	STMicroelectronics	OTP ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	IN-LINE				2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-PDIP-T40	3.63 V		15.24 mm	Not Qualified	4194304 bit	2.97 V				52.18 mm	150 ns
M27V801-200P1TR	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		8	IN-LINE				2.54 mm	70 Cel		1MX8	1M	0 Cel		DUAL	R-PDIP-T32	3.6 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	3 V				41.91 mm	200 ns
M27V402-120B6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	IN-LINE				2.54 mm	85 Cel		256KX16	256K	-40 Cel		DUAL	R-PDIP-T40	3.63 V		15.24 mm	Not Qualified	4194304 bit	2.97 V				52.18 mm	120 ns
M27W801-150B6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		3		8	IN-LINE				2.54 mm	85 Cel		1MX8	1M	-40 Cel		DUAL	R-PDIP-T32	3.6 V	4.83 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V				42.035 mm	120 ns
M27V322-120XB1	STMicroelectronics	OTP ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	MATTE TIN	DUAL	R-PDIP-T42	3.465 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	3.135 V		e3	.00006 Amp	52.455 mm	120 ns
M27W512-120B6	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		3		8	IN-LINE				2.54 mm	85 Cel		64KX8	64K	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T28	3.6 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	2.7 V		e3		36.83 mm	100 ns
M27W201-200B6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3	3/3.3	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	3.6 V	4.83 mm	15.24 mm	Not Qualified	2097152 bit	2.7 V		e3	.000015 Amp	42.035 mm	100 ns
M27V801-120P1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	1048576 words	COMMON	3.3	3.3	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32	3.63 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	2.97 V		e0	.00002 Amp	41.91 mm	120 ns
TS27C64A-25CP	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	5.5 V		15.24 mm	Not Qualified	65536 bit	4.5 V		e0	.0001 Amp	36.83 mm	250 ns	12.5
M27V402-120B6	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T40	3.63 V		15.24 mm	Not Qualified	4194304 bit	2.97 V		e0	.00002 Amp	52.18 mm	120 ns
ST27C256-30VP	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			20 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				Not Qualified	262144 bit			e0	.00001 Amp		300 ns	12.5
M27V102-90BN6	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	IN-LINE					85 Cel		64KX16	64K	-40 Cel		DUAL	R-PDIP-T28	3.6 V			Not Qualified	1048576 bit	3 V					90 ns
M27V402-120B5TR	STMicroelectronics	OTP ROM	COMMERCIAL EXTENDED	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	IN-LINE				2.54 mm	85 Cel		256KX16	256K	-20 Cel		DUAL	R-PDIP-T40	3.63 V		15.24 mm	Not Qualified	4194304 bit	2.97 V				52.18 mm	120 ns

OTP ROM

OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.

OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.

OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.