OTHER OTP ROM 57

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
BQ2022ADBZR	Texas Instruments	OTP ROM	OTHER	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	.02 mA	1024 words	COMMON	2.7	3/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	OTP ROMs	.95 mm	70 Cel	OPEN-DRAIN	1KX1	1K	-20 Cel	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)	DUAL	R-PDSO-G3	1	5.5 V	1.12 mm	.01667 MHz	1.3 mm	Not Qualified	1024 bit	2.65 V	ORGANIZED AS 4 PAGES OF 32 BYTES EACH	e4	NOT SPECIFIED	260		2.92 mm
BQ2022ADBZRG4	Texas Instruments	OTP ROM	OTHER	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	.02 mA	1024 words	COMMON	2.7	3/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	OTP ROMs	.95 mm	70 Cel	OPEN-DRAIN	1KX1	1K	-20 Cel	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)	DUAL	R-PDSO-G3	1	5.5 V	1.12 mm	.01667 MHz	1.3 mm	Not Qualified	1024 bit	2.65 V	ORGANIZED AS 4 PAGES OF 32 BYTES EACH	e4	NOT SPECIFIED	260		2.92 mm
BQ2022ALPRE3	Texas Instruments	OTP ROM	OTHER	3	TO-92	ROUND	UNSPECIFIED	NO	1	CMOS	WIRE	SERIAL	ASYNCHRONOUS	.02 mA	1024 words	COMMON	2.7	3/5	1	CYLINDRICAL	SIP3,.1,50	OTP ROMs	1.27 mm	70 Cel	OPEN-DRAIN	1KX1	1K	-20 Cel	MATTE TIN	BOTTOM	O-XBCY-W3		5.5 V		.01667 MHz		Not Qualified	1024 bit	2.65 V	ORGANIZED AS 4 PAGES OF 32 BYTES EACH	e3
BQ2026DBZR	Texas Instruments	OTP ROM	OTHER	3	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	.02 mA	1536 words	COMMON		3/5	1	SMALL OUTLINE	TO-236	OTP ROMs	.95 mm	70 Cel	OPEN-DRAIN	1.5KX1	1.5K	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G3	1	5.5 V	1.12 mm	.01667 MHz	1.3 mm	Not Qualified	1536 bit	2.65 V		e4	NOT SPECIFIED	260		2.92 mm
BQ2024DBZR	Texas Instruments	OTP ROM	OTHER	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	.02 mA	1536 words	COMMON	2.7	3/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	OTP ROMs	.95 mm	70 Cel	OPEN-DRAIN	1.5KX1	1.5K	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G3	1	5.5 V	1.12 mm	.01667 MHz	1.3 mm	Not Qualified	1536 bit	2.65 V	ORGANIZED AS 6 PAGES OF 32 BYTES EACH	e4	NOT SPECIFIED	260		2.92 mm
BQ2026LPR	Texas Instruments	OTP ROM	OTHER	3	TO-92	ROUND	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS	.02 mA	1536 words	COMMON		3/5	1	CYLINDRICAL	SIP3,.1,50	OTP ROMs	1.27 mm	70 Cel	OPEN-DRAIN	1.5KX1	1.5K	-20 Cel	Matte Tin (Sn)	BOTTOM	O-XBCY-T3		5.5 V	5.34 mm	.01667 MHz	4.3 mm	Not Qualified	1536 bit	2.65 V		e3	NOT SPECIFIED	NOT SPECIFIED		4.3 mm
HPA01220DBZR	Texas Instruments	OTP ROM	OTHER	3	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words		3		1	SMALL OUTLINE			.95 mm	70 Cel		1KX1	1K	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G3	1	5.5 V	1.12 mm		1.3 mm		1024 bit	2.65 V		e4	NOT SPECIFIED	260		2.92 mm
SN10139J	Texas Instruments	OTP ROM	OTHER	16	DIP	RECTANGULAR	CERAMIC	NO		ECL10K	THROUGH-HOLE			145 mA	32 words				8	IN-LINE	DIP16,.3	OTP ROMs	2.54 mm	85 Cel		32X8	32	0 Cel		DUAL	R-XDIP-T16						Not Qualified					NOT SPECIFIED	NOT SPECIFIED			20 ns
SN10139JE	Texas Instruments	OTP ROM	OTHER	16	DIP	RECTANGULAR	CERAMIC	NO		ECL10K	THROUGH-HOLE			145 mA	32 words				8	IN-LINE	DIP16,.3	OTP ROMs	2.54 mm	85 Cel		32X8	32	0 Cel		DUAL	R-XDIP-T16						Not Qualified					NOT SPECIFIED	NOT SPECIFIED			20 ns
BQ2022LPRE3	Texas Instruments	OTP ROM	OTHER	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	WIRE	SERIAL	ASYNCHRONOUS	.02 mA	1024 words	COMMON	2.7	3/5	1	CYLINDRICAL	SIP3,.1,50	OTP ROMs	1.27 mm	70 Cel	OPEN-DRAIN	1KX1	1K	-20 Cel	MATTE TIN	BOTTOM	O-PBCY-W3		5.5 V		.01667 MHz		Not Qualified	1024 bit	2.65 V	ORGANIZED AS 4 PAGES OF 32 BYTES EACH	e3
BQ2024LPR	Texas Instruments	OTP ROM	OTHER	3	TO-92	ROUND	UNSPECIFIED	NO	1	CMOS	WIRE	SERIAL	ASYNCHRONOUS	.02 mA	1536 words	COMMON	2.7	3/5	1	CYLINDRICAL	SIP3,.1,50	OTP ROMs	1.27 mm	70 Cel	OPEN-DRAIN	1.5KX1	1.5K	-20 Cel		BOTTOM	O-XBCY-W3		5.5 V		.01667 MHz		Not Qualified	1536 bit	2.65 V	ORGANIZED AS 6 PAGES OF 32 BYTES EACH		NOT SPECIFIED	NOT SPECIFIED
BQ2024DBZRG4	Texas Instruments	OTP ROM	OTHER	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	.02 mA	1536 words	COMMON		3/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	OTP ROMs	.95 mm	70 Cel	OPEN-DRAIN	1.5KX1	1.5K	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G3	1	5.5 V	1.12 mm	.01667 MHz	1.3 mm	Not Qualified	1536 bit	2.65 V	ORGANIZED AS 6 PAGES OF 32 BYTES EACH	e4	NOT SPECIFIED	260		2.92 mm
BQ2022LPR	Texas Instruments	OTP ROM	OTHER	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	WIRE	SERIAL	ASYNCHRONOUS	.02 mA	1024 words	COMMON	2.7	3/5	1	CYLINDRICAL	SIP3,.1,50	OTP ROMs	1.27 mm	70 Cel	OPEN-DRAIN	1KX1	1K	-20 Cel	MATTE TIN	BOTTOM	O-PBCY-W3		5.5 V		.01667 MHz		Not Qualified	1024 bit	2.65 V	ORGANIZED AS 4 PAGES OF 32 BYTES EACH	e3
5962-01-133-9668	Texas Instruments	OTP ROM	OTHER	16	DIP	RECTANGULAR	CERAMIC	NO		ECL10K	THROUGH-HOLE			145 mA	32 words				8	IN-LINE	DIP16,.3	OTP ROMs	2.54 mm	85 Cel		32X8	32	0 Cel		DUAL	R-XDIP-T16						Not Qualified					NOT SPECIFIED	NOT SPECIFIED			20 ns
5962-01-149-9458	Texas Instruments	OTP ROM	OTHER	16	DIP	RECTANGULAR	CERAMIC	NO		ECL10K	THROUGH-HOLE			145 mA	32 words				8	IN-LINE	DIP16,.3	OTP ROMs	2.54 mm	85 Cel		32X8	32	0 Cel		DUAL	R-XDIP-T16						Not Qualified					NOT SPECIFIED	NOT SPECIFIED			20 ns
M27V405-180N5	STMicroelectronics	OTP ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	OTP ROMs	.5 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.63 V	1.2 mm		8 mm	Not Qualified	4194304 bit	2.97 V		e0			.0001 Amp	18.4 mm	180 ns
M27V402-200K5TR	STMicroelectronics	OTP ROM	OTHER	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC44,.7SQ	Other Memory ICs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	QUAD	S-PQCC-J44		3.63 V	4.7 mm		16.585 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	16.585 mm	200 ns
M27V402-120B5	STMicroelectronics	OTP ROM	OTHER	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE	DIP40,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-PDIP-T40		3.63 V			15.24 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	52.18 mm	120 ns
M27V405-180K5	STMicroelectronics	OTP ROM	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	TIN LEAD	QUAD	R-PQCC-J32		3.63 V	3.56 mm		11.455 mm	Not Qualified	4194304 bit	2.97 V		e0			.0001 Amp	13.995 mm	180 ns
M27V402-150K5TR	STMicroelectronics	OTP ROM	OTHER	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC44,.7SQ	Other Memory ICs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	QUAD	S-PQCC-J44		3.63 V	4.7 mm		16.585 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	16.585 mm	150 ns
M27V405-120K5TR	STMicroelectronics	OTP ROM	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Other Memory ICs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	TIN LEAD	QUAD	R-PQCC-J32		3.63 V	3.56 mm		11.455 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	13.995 mm	120 ns
M27V405-180K5TR	STMicroelectronics	OTP ROM	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Other Memory ICs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	TIN LEAD	QUAD	R-PQCC-J32		3.63 V	3.56 mm		11.455 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	13.995 mm	180 ns
M27V402150K5	STMicroelectronics	OTP ROM	OTHER	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	QUAD	S-PQCC-J44		3.63 V	4.7 mm		16.5862 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	16.5862 mm	150 ns
M27V405-200N5TR	STMicroelectronics	OTP ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Other Memory ICs	.5 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.63 V	1.2 mm		8 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	18.4 mm	200 ns
M27V402-120K4TR	STMicroelectronics	OTP ROM	OTHER	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC44,.7SQ	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	QUAD	S-PQCC-J44		3.63 V	4.7 mm		16.585 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	16.585 mm	120 ns
M27V405-150K5	STMicroelectronics	OTP ROM	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	TIN LEAD	QUAD	R-PQCC-J32		3.63 V	3.56 mm		11.455 mm	Not Qualified	4194304 bit	2.97 V		e0			.0001 Amp	13.995 mm	150 ns
M27V405-180N5TR	STMicroelectronics	OTP ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Other Memory ICs	.5 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.63 V	1.2 mm		8 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	18.4 mm	180 ns
M27V402200K5	STMicroelectronics	OTP ROM	OTHER	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	QUAD	S-PQCC-J44		3.63 V	4.7 mm		16.5862 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	16.5862 mm	200 ns
M27V405-150K5TR	STMicroelectronics	OTP ROM	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Other Memory ICs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	TIN LEAD	QUAD	R-PQCC-J32		3.63 V	3.56 mm		11.455 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	13.995 mm	150 ns
M27V402-200N4TR	STMicroelectronics	OTP ROM	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Other Memory ICs	.5 mm	70 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G40		3.63 V	1.2 mm		10 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	18.4 mm	200 ns
M27V402-200B5	STMicroelectronics	OTP ROM	OTHER	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE	DIP40,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-PDIP-T40		3.63 V			15.24 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	52.18 mm	200 ns
M27V402-150N5TR	STMicroelectronics	OTP ROM	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Other Memory ICs	.5 mm	85 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G40		3.63 V	1.2 mm		10 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	18.4 mm	150 ns
M27V402200N5	STMicroelectronics	OTP ROM	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	OTP ROMs	.5 mm	85 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G40		3.63 V	1.2 mm		10 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	18.4 mm	200 ns
M27V405-150N5TR	STMicroelectronics	OTP ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Other Memory ICs	.5 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.63 V	1.2 mm		8 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	18.4 mm	150 ns
M27V405-120N5	STMicroelectronics	OTP ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	OTP ROMs	.5 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.63 V	1.2 mm		8 mm	Not Qualified	4194304 bit	2.97 V		e0			.0001 Amp	18.4 mm	120 ns
M27V402-150B4	STMicroelectronics	OTP ROM	OTHER	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE	DIP40,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-PDIP-T40		3.63 V			15.24 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	52.18 mm	150 ns
M27V402-150N4TR	STMicroelectronics	OTP ROM	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Other Memory ICs	.5 mm	70 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G40		3.63 V	1.2 mm		10 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	18.4 mm	150 ns
M27V405-200N5	STMicroelectronics	OTP ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	OTP ROMs	.5 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.63 V	1.2 mm		8 mm	Not Qualified	4194304 bit	2.97 V		e0			.0001 Amp	18.4 mm	200 ns
M27V402120K5	STMicroelectronics	OTP ROM	OTHER	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	QUAD	S-PQCC-J44		3.63 V	4.7 mm		16.5862 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	16.5862 mm	120 ns
M27V405-200K5TR	STMicroelectronics	OTP ROM	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Other Memory ICs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	TIN LEAD	QUAD	R-PQCC-J32		3.63 V	3.56 mm		11.455 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	13.995 mm	200 ns
M27V405-150N5	STMicroelectronics	OTP ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	OTP ROMs	.5 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.63 V	1.2 mm		8 mm	Not Qualified	4194304 bit	2.97 V		e0			.0001 Amp	18.4 mm	150 ns
M27V402-200N5TR	STMicroelectronics	OTP ROM	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Other Memory ICs	.5 mm	85 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G40		3.63 V	1.2 mm		10 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	18.4 mm	200 ns
M27V405-200K5	STMicroelectronics	OTP ROM	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	TIN LEAD	QUAD	R-PQCC-J32		3.63 V	3.56 mm		11.455 mm	Not Qualified	4194304 bit	2.97 V		e0			.0001 Amp	13.995 mm	200 ns
M27V402-120K5TR	STMicroelectronics	OTP ROM	OTHER	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC44,.7SQ	Other Memory ICs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	QUAD	S-PQCC-J44		3.63 V	4.7 mm		16.585 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	16.585 mm	120 ns
M27V402-200B4	STMicroelectronics	OTP ROM	OTHER	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE	DIP40,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-PDIP-T40		3.63 V			15.24 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	52.18 mm	200 ns
M27V402-150K4TR	STMicroelectronics	OTP ROM	OTHER	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC44,.7SQ	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	QUAD	S-PQCC-J44		3.63 V	4.7 mm		16.585 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	16.585 mm	150 ns
M27V402-120N4TR	STMicroelectronics	OTP ROM	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Other Memory ICs	.5 mm	70 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G40		3.63 V	1.2 mm		10 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	18.4 mm	120 ns
M27V402150N5	STMicroelectronics	OTP ROM	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	OTP ROMs	.5 mm	85 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G40		3.63 V	1.2 mm		10 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	18.4 mm	150 ns

OTP ROM

OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.

OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.

OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.