APPLICATION SPECIFIC SRAM SRAM 391

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
IS61WV25616EDBLL-10BLI	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	2 V	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B48	1	3.6 V	1.2 mm		6 mm	Not Qualified	16777216 bit	2.4 V	e3			.006 Amp	8 mm	10 ns
IS61WV25616EDBLL-10BLI-TR	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B48	1	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.4 V	e3			.006 Amp	8 mm	10 ns
IS61WV25616EDBLL-10BI	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	2 V	-40 Cel		BOTTOM		R-PBGA-B48	1	3.6 V	1.2 mm		6 mm	Not Qualified	16777216 bit	2.4 V				.006 Amp	8 mm	10 ns
IS61WV25616EDBLL-10BI-TR	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48	1	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.4 V				.006 Amp	8 mm	10 ns
IS61WV25616EDBLL-8BI	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48	1	3.63 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.97 V				.006 Amp	8 mm	8 ns
IS61WV25616EDBLL-8BI-TR	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48	1	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.4 V				.006 Amp	8 mm	8 ns
IS61WV25616EDBLL-8BLI	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B48	1	3.63 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.97 V	e3			.006 Amp	8 mm	8 ns
IS61WV25616EDBLL-8BLI-TR	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B48	1	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.4 V	e3			.006 Amp	8 mm	8 ns
IS61WV25616EDBLL-8TI	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3.3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		DUAL		R-PDSO-G44	1	3.63 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.97 V				.006 Amp	18.41 mm	8 ns
IS61WV25616EDBLL-8TI-TR	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		DUAL		R-PDSO-G44	1	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.4 V				.006 Amp	18.41 mm	8 ns
IS61WV25616EDBLL-8TLI	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3.3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	1	3.63 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.97 V	e3			.006 Amp	18.41 mm	8 ns
IS61WV25616EDBLL-8TLI-TR	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	1	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.4 V	e3			.006 Amp	18.41 mm	8 ns
M68AW256D70ND6	STMicroelectronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V	e0			.00002 Amp	18.41 mm	70 ns
M68AR256ML80ZB6	STMicroelectronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	7 mA	262144 words	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		1.95 V	1.2 mm		7 mm	Not Qualified	4194304 bit	1.65 V	e1			.000001 Amp	8 mm	80 ns
M68AW256D55ND6	STMicroelectronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V	e0			.00002 Amp	18.41 mm	55 ns
M68AW256D55ZB6	STMicroelectronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		7 mm	Not Qualified	4194304 bit	2.7 V	e1			.00002 Amp	8 mm	55 ns
M68AW256D70ZB6	STMicroelectronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		7 mm	Not Qualified	4194304 bit	2.7 V	e1			.00002 Amp	8 mm	70 ns
M48Z02-150PC1TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	DUAL		R-PDIP-T24	1					Not Qualified	16384 bit		e3			.003 Amp		150 ns
M48Z12-70PC6TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	MATTE TIN	DUAL		R-PDIP-T24	1					Not Qualified	16384 bit		e3			.003 Amp		70 ns
M48Z12-200PC1TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	DUAL		R-PDIP-T24	1					Not Qualified	16384 bit		e3			.003 Amp		200 ns
M48Z12-200PC6TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	MATTE TIN	DUAL		R-PDIP-T24	1					Not Qualified	16384 bit		e3			.003 Amp		200 ns
M48Z02-200PC1TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	DUAL		R-PDIP-T24	1					Not Qualified	16384 bit		e3			.003 Amp		200 ns
M48Z02-70PC1TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	DUAL		R-PDIP-T24	1					Not Qualified	16384 bit		e3			.003 Amp		70 ns
M48Z12-150PC6TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	MATTE TIN	DUAL		R-PDIP-T24	1					Not Qualified	16384 bit		e3			.003 Amp		150 ns
M48Z12-150PC1TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	DUAL		R-PDIP-T24	1					Not Qualified	16384 bit		e3			.003 Amp		150 ns
M48Z12-70PC1TR	STMicroelectronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	DUAL		R-PDIP-T24	1					Not Qualified	16384 bit		e3			.003 Amp		70 ns
71016NS12PHI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	210 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V				Not Qualified	1048576 bit	4.5 V	e0			.01 Amp		12 ns
71421SA20TFG	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP64,.47SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	16384 bit	4.5 V	e3	30	260	.015 Amp		20 ns
71421LA25TFG	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP64,.47SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	16384 bit	4.5 V	e3	30	260	.0015 Amp		25 ns
71421LA55TFG	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP64,.47SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	16384 bit	4.5 V	e3	30	260	.0015 Amp		55 ns
71421LA55TFGI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP64,.47SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	16384 bit	4.5 V	e3	30	260	.004 Amp		55 ns
71016NS20PH	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V				Not Qualified	1048576 bit	4.5 V	e0			.01 Amp		20 ns
71421SA25TFG	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP64,.47SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	16384 bit	4.5 V	e3	30	260	.015 Amp		25 ns
71421SA55TFG	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP64,.47SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	16384 bit	4.5 V	e3	30	260	.015 Amp		55 ns
71421LA20TFG	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP64,.47SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	16384 bit	4.5 V	e3	30	260	.0015 Amp		20 ns
71421LA35JG	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V				Not Qualified	16384 bit	4.5 V	e3	30	260	.0015 Amp		35 ns
71421LA25JG	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V				Not Qualified	16384 bit	4.5 V	e3	30	260	.0015 Amp		25 ns
71421SA35TFG	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP64,.47SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	16384 bit	4.5 V	e3	30	260	.015 Amp		35 ns
71421SA25TFGI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	270 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP64,.47SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	2KX8	2K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	16384 bit	4.5 V	e3	30	260	.03 Amp		25 ns
71421LA25JGI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V				Not Qualified	16384 bit	4.5 V	e3	30	260	.004 Amp		25 ns
71421LA25TFGI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP64,.47SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	16384 bit	4.5 V	e3	30	260	.004 Amp		25 ns
71016NS12Y	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	210 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J44		5.5 V				Not Qualified	1048576 bit	4.5 V	e0			.01 Amp		12 ns
71421LA35TFG	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP64,.47SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	16384 bit	4.5 V	e3	30	260	.0015 Amp		35 ns
71421SA55TFGI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP64,.47SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	2KX8	2K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	16384 bit	4.5 V	e3	30	260	.03 Amp		55 ns
71016NS15YI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	180 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J44		5.5 V				Not Qualified	1048576 bit	4.5 V	e0			.01 Amp		15 ns
70T3539MS133BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	740 mA	524288 words	COMMON		2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3			133 MHz		Not Qualified	18874368 bit		e1	30	260	.02 Amp		15 ns
7052S25PFB	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	4					Not Qualified	16384 bit		e0	30	240	.03 Amp		25 ns
7006L15G	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	260 mA	16384 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	2 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68		5.5 V				Not Qualified	131072 bit	4.5 V	e0			.0015 Amp		15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.