APPLICATION SPECIFIC SRAM SRAM 391

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
70V05L20GI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	68	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	195 mA	8192 words	COMMON	3.3	3.3	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	3 V	-40 Cel	TIN LEAD	PERPENDICULAR	2	S-XPGA-P68						Not Qualified	65536 bit			e0			.005 Amp		20 ns
7052S35PFGM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3					Not Qualified	16384 bit			e3			.03 Amp		35 ns
70V3599S166DR8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	208	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G208				166 MHz		Not Qualified	4718592 bit			e0			.03 Amp		3.6 ns
7052S25PFI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	85 Cel	3-STATE	2KX8	2K	4.5 V	-40 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	3					Not Qualified	16384 bit			e0			.03 Amp		25 ns
70V3599S133DRGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	480 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V		133 MHz		Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3			.04 Amp		4.2 ns
7052S35PFM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	3					Not Qualified	16384 bit			e0			.03 Amp		35 ns
7006S17F	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	310 mA	16384 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-F68		5.5 V			24.0792 mm	Not Qualified	131072 bit	4.5 V		e0			.015 Amp	24.0792 mm	17 ns
70V05S15G	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	215 mA	8192 words	COMMON	3.3	3.3	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	3 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-XPGA-P68						Not Qualified	65536 bit			e0			.005 Amp		15 ns
7052S25GI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	108	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	GRID ARRAY	PGA108,12X12	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	4.5 V	-40 Cel	TIN LEAD	PERPENDICULAR	4	S-XPGA-P108						Not Qualified	16384 bit			e0			.03 Amp		25 ns
70V3319S133BFG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	400 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX18	256K	3.15 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B208	3	3.45 V		133 MHz		Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1			.03 Amp		4.2 ns
7006L70FB	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-PQFP-F68		5.5 V			24.0792 mm	Not Qualified	131072 bit	4.5 V		e0			.004 Amp	24.0792 mm	70 ns
70V3399S166PRFG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	128	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK	QFP128,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	128KX18	128K	3.15 V	0 Cel	MATTE TIN	QUAD	2	R-PQFP-G128	3	3.45 V		166 MHz		Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3			.03 Amp		4 ns
70P265L90BYI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	60 mA	16384 words	COMMON	1.8	1.8/3	16	GRID ARRAY	BGA100,10X10,20	SRAMs	.5 mm	85 Cel	3-STATE	16KX16	16K		-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B100		1.9 V				Not Qualified	262144 bit	1.7 V	IT CAN ALSO OPERATE AT 2.5 TO 3 VOLT NOMINAL SUPPLY	e0			.000008 Amp		90 ns
7052L25GI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	108	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	GRID ARRAY	PGA108,12X12	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	TIN LEAD	PERPENDICULAR	4	S-XPGA-P108						Not Qualified	16384 bit			e0			.0018 Amp		25 ns
70V3599S133DRI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	480 mA	131072 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP208,1.2SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G208				133 MHz		Not Qualified	4718592 bit			e0			.04 Amp		4.2 ns
7052S25GB	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	108	PGA	SQUARE	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	GRID ARRAY	PGA108,12X12	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	4	S-XPGA-P108						Not Qualified	16384 bit			e0			.03 Amp		25 ns
70T3339S166BCI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	510 mA	524288 words	COMMON		2.5,2.5/3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	512KX18	512K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3			166 MHz		Not Qualified	9437184 bit			e0			.015 Amp		12 ns
70T3339S166BCGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	510 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	128KX18	128K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V		166 MHz		Not Qualified	2359296 bit	2.4 V		e1	30	260	.015 Amp		3.6 ns
70P269L90BYI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	60 mA	16384 words	COMMON	1.8	1.8/3	16	GRID ARRAY	BGA100,10X10,20	SRAMs	.5 mm	85 Cel	3-STATE	16KX16	16K		-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B100		1.9 V				Not Qualified	262144 bit	1.7 V	IT ALSO OPERATES AT SUPPLY VOLTAGE 2.5 V AND 3 V NOMINAL	e0			.006 Amp		90 ns
70V3589S133DRG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	208	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	400 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V		133 MHz		Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3		260	.03 Amp		4.2 ns
70T3589S166BCI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	510 mA	65536 words	COMMON		2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX36	64K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3			166 MHz		Not Qualified	2359296 bit			e0			.02 Amp		12 ns
70T659S15BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	305 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V				Not Qualified	4718592 bit	2.4 V		e1	30	260	.01 Amp		15 ns
70V3589S166DR8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	208	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	500 mA	65536 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G208				166 MHz		Not Qualified	2359296 bit			e0			.03 Amp		3.6 ns
7006S55PFGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	8	FLATPACK	QFP64,.6SQ,32	SRAMs	.8 mm	85 Cel	3-STATE	16KX8	16K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	131072 bit	4.5 V		e3			.03 Amp		55 ns
7006S70PFB	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	8	FLATPACK	QFP64,.66SQ,32	SRAMs	.8 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	131072 bit	4.5 V		e0	30	240	.03 Amp		70 ns
70V3389S5BFGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	415 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V		100 MHz		Not Qualified	1179648 bit	3.15 V	PIPELINED ARCHITECTURE	e1	30	260	.03 Amp		5 ns
7006S20F	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	360 mA	16384 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-F68		5.5 V			24.0792 mm	Not Qualified	131072 bit	4.5 V		e0			.015 Amp	24.0792 mm	20 ns
7052L25PFB	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	4					Not Qualified	16384 bit			e0	30	240	.0018 Amp		25 ns
70V06L20GI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	195 mA	16384 words	COMMON	3.3	3.3	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	2 V	-40 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68		3.6 V				Not Qualified	131072 bit	3 V		e0			.005 Amp		20 ns
70V05S20JI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	225 mA	8192 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1					Not Qualified	65536 bit			e0	20	225	.015 Amp		20 ns
70V3319S133BCGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	480 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.15 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	3.45 V		133 MHz		Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1			.04 Amp		4.2 ns
70T3399S166BCI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	510 mA	131072 words	COMMON		2.5,2.5/3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	128KX18	128K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3			166 MHz		Not Qualified	2359296 bit			e0			.02 Amp		12 ns
70T3799MS133BBI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	324	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	900 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	72	GRID ARRAY	BGA324,18X18,40	SRAMs	1 mm	85 Cel	3-STATE	128KX72	128K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B324		2.6 V		133 MHz		Not Qualified	9437184 bit	2.4 V		e0			.025 Amp		15 ns
70V3379S6PRFG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	128	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	310 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK	QFP128,.63X.87,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX18	32K	3.15 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	R-PQFP-G128	3	3.45 V		83 MHz		Not Qualified	589824 bit	3.15 V		e3	30	260	.015 Amp		6 ns
70T3589S133BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	370 mA	65536 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX36	64K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V		133 MHz		Not Qualified	2359296 bit	2.4 V		e1	30	260	.015 Amp		4.2 ns
7052S25PFM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	3					Not Qualified	16384 bit			e0			.03 Amp		25 ns
7005S17F	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	68	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	310 mA	8192 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-XQFP-F68						Not Qualified	65536 bit			e0			.015 Amp		17 ns
71V2556S150BGGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	335 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		X-PBGA-B119	3	3.465 V		150 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260	.045 Amp	22 mm	3.8 ns
IDT7052L25PFGM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3					Not Qualified	16384 bit			e3			.0018 Amp		25 ns
70V658S15BFGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	490 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX36	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V				Not Qualified	2359296 bit	3.15 V		e1	30	260	.015 Amp		15 ns
IDT70V3389S6BFGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3			83 MHz		Not Qualified	1179648 bit			e1	30	260	.03 Amp		6 ns
IDT70V3389S4BCGI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	460 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3			133 MHz		Not Qualified	1179648 bit			e1	30	260	.015 Amp		4.2 ns
IDT70V3599S166DRG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	208	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3			166 MHz		Not Qualified	4718592 bit			e3			.03 Amp		3.6 ns
IDT7052S25PFM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	3					Not Qualified	16384 bit			e0			.03 Amp		25 ns
71V2556XSA150BGGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	335 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		X-PBGA-B119	3	3.465 V		150 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260	.045 Amp	22 mm	3.8 ns
70V658S15BCI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	490 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX36	64K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V				Not Qualified	2359296 bit	3.15 V		e0			.015 Amp		15 ns
M5M5V5636GP-16I#B0	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	380 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	512KX36	512K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	167 MHz	14 mm	Not Qualified	18874368 bit	3.135 V		e3			.03 Amp	20 mm	3.8 ns
IDT70V3389S4BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	460 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX18	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3			133 MHz		Not Qualified	1179648 bit			e1	30	260	.015 Amp		4.2 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.