APPLICATION SPECIFIC SRAM SRAM 391

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Memory Density	JESD-609 Code	Maximum Standby Current	Maximum Access Time
K1B1616B2B-HI70T	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM	R-PBGA-B54	1	Not Qualified	16777216 bit	e3		70 ns
K1B1616B2B-FI70	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel		BOTTOM	R-PBGA-B54	1	Not Qualified	16777216 bit			70 ns
MT58LC32K32B2LG-12LP	Micron Technology	APPLICATION SPECIFIC SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	225 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	32KX32	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	R-PQFP-G100		Not Qualified	1048576 bit	e0		12 ns
MT5C2568-10AT	Micron Technology	APPLICATION SPECIFIC SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28		Not Qualified	262144 bit	e0	.005 Amp	10 ns
MT5C6408DJ-20IT	Micron Technology	APPLICATION SPECIFIC SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J28		Not Qualified	65536 bit	e0	.005 Amp	20 ns
MT5C1606DJ-12IT	Micron Technology	APPLICATION SPECIFIC SRAM	INDUSTRIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	4096 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	85 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24		Not Qualified	16384 bit	e0	.003 Amp	12 ns
MT5LC2568-35AT	Micron Technology	APPLICATION SPECIFIC SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	3.3	3.3	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28		Not Qualified	262144 bit	e0	.0003 Amp	35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.