APPLICATION SPECIFIC SRAM SRAM 391

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
71V2556XSA133BGGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	310 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260	.045 Amp	22 mm	4.2 ns
IDT7006S55PFGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	8	FLATPACK	QFP64,.6SQ,32	SRAMs	.8 mm	85 Cel	3-STATE	16KX8	16K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G64	3					Not Qualified	131072 bit			e3			.03 Amp		55 ns
7005L15G	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	260 mA	8192 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-XPGA-P68						Not Qualified	65536 bit			e0			.0015 Amp		15 ns
M5M5V5A36GP-85#A0	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	260 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX36	512K	3.14 V	0 Cel		QUAD		R-PQFP-G100	1	3.465 V	1.6 mm	100 MHz	14 mm	Not Qualified	18874368 bit	3.135 V					.03 Amp	20 mm	8.5 ns
M5M5V5636GP-16#B0	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	380 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX36	512K	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	167 MHz	14 mm	Not Qualified	18874368 bit	3.135 V		e3			.03 Amp	20 mm	3.8 ns
70V27S55BF	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	144	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	225 mA	32768 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA144,13X13,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX16	32K	3 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B144	3					Not Qualified	524288 bit			e0			.006 Amp		55 ns
71V2556XS166BGGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260	.045 Amp	22 mm	3.5 ns
M5M5V5A36GP-75#A0	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	280 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX36	512K	3.14 V	0 Cel		QUAD		R-PQFP-G100	1	3.465 V	1.6 mm	117 MHz	14 mm	Not Qualified	18874368 bit	3.135 V					.03 Amp	20 mm	7.5 ns
IDT7006L55PFGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	FLATPACK	QFP64,.6SQ,32	SRAMs	.8 mm	85 Cel	3-STATE	16KX8	16K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G64	3					Not Qualified	131072 bit			e3			.004 Amp		55 ns
IDT70V9289L9PFGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	240 mA	65536 words	COMMON	3.3	3.3	16	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3			66 MHz		Not Qualified	1048576 bit			e3	30	260	.002 Amp		20 ns
IDT70V3389S6BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	310 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX18	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3			83 MHz		Not Qualified	1179648 bit			e1	30	260	.015 Amp		6 ns
M5M5V5A36GP-85#B0	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	260 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX36	512K	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	100 MHz	14 mm	Not Qualified	18874368 bit	3.135 V		e3			.03 Amp	20 mm	8.5 ns
70V639S15BFI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	490 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX18	128K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V				Not Qualified	2359296 bit	3.15 V		e0	20	225	.015 Amp		15 ns
IDT70V9289L12PFG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	200 mA	65536 words	COMMON	3.3	3.3	16	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3			50 MHz		Not Qualified	1048576 bit			e3	30	260	.002 Amp		25 ns
70V26S25G	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	170 mA	16384 words	COMMON	3.3	3.3	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	3 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84		3.6 V				Not Qualified	262144 bit	3 V		e0			.006 Amp		25 ns
IDT70V3389S6BCGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3			83 MHz		Not Qualified	1179648 bit			e1	30	260	.03 Amp		6 ns
71V2556S100BGGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260	.045 Amp	22 mm	5 ns
70V658S12BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	465 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V				Not Qualified	2359296 bit	3.15 V		e1	30	260	.015 Amp		12 ns
IDT70V9199L7PFG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	3.3	9	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX9	128K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3			83 MHz		Not Qualified	1179648 bit			e3	30	260	.002 Amp		7.5 ns
IDT70T3319S166BCGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	510 mA	262144 words	COMMON		2.5,2.5/3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3			166 MHz		Not Qualified	4718592 bit			e1	30	260	.02 Amp		12 ns
IDT7052L35PFGM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3					Not Qualified	16384 bit			e3			.0018 Amp		35 ns
71V2556S166BGGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260	.045 Amp	22 mm	3.5 ns
IDT70V3389S6BFI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3			83 MHz		Not Qualified	1179648 bit			e0	20	225	.03 Amp		6 ns
IDT7MP1021S40Z	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	64	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	940 mA	131072 words	COMMON	5	5	8	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T64						Not Qualified	1048576 bit			e0			.125 Amp		40 ns
IDT70V3589S133BFG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	400 mA	65536 words	COMMON		2.5/3.3,3.3	36	GRID ARRAY, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3			133 MHz		Not Qualified	2359296 bit			e1	30	260	.03 Amp		4.2 ns
IDT70V3389S6BFG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	310 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX18	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3			83 MHz		Not Qualified	1179648 bit			e1	30	260	.015 Amp		6 ns
70V658S15BFI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	490 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX36	64K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V				Not Qualified	2359296 bit	3.15 V		e0	20	225	.015 Amp		15 ns
71321LA55JG	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V				Not Qualified	16384 bit	4.5 V		e3	30	260	.0015 Amp		55 ns
M5M5V5A36GP-75#B0	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	280 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX36	512K	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	1	3.465 V	1.6 mm	117 MHz	14 mm	Not Qualified	18874368 bit	3.135 V		e3			.03 Amp	20 mm	7.5 ns
7005L15F	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	68	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	260 mA	8192 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	QUAD	2	S-XQFP-F68						Not Qualified	65536 bit			e0			.0015 Amp		15 ns
70V657S15BCGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	490 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	32KX36	32K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V				Not Qualified	1179648 bit	3.15 V		e1	30	260	.015 Amp		15 ns
IDT70T3399S166BCGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	510 mA	131072 words	COMMON		2.5,2.5/3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	128KX18	128K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3			166 MHz		Not Qualified	2359296 bit			e1	30	260	.02 Amp		12 ns
70V639S15PRFI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	128	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	490 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK	QFP128,.63X.87,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX18	128K	3.15 V	-40 Cel	TIN LEAD	QUAD	2	R-PQFP-G128	3	3.45 V				Not Qualified	2359296 bit	3.15 V		e0	30	225	.015 Amp		15 ns
70V658S15BFG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	440 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V				Not Qualified	2359296 bit	3.15 V		e1	30	260	.015 Amp		15 ns
70V659S15BCGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	490 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V				Not Qualified	4718592 bit	3.15 V		e1	30	260	.015 Amp		15 ns
IDT70V3589S133BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	400 mA	65536 words	COMMON		2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3			133 MHz		Not Qualified	2359296 bit			e1	30	260	.03 Amp		4.2 ns
7005S20GB	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	68	PGA	SQUARE	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL	ASYNCHRONOUS	370 mA	8192 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-XPGA-P68						Not Qualified	65536 bit			e0			.03 Amp		20 ns
7005L17F	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	68	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	260 mA	8192 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	QUAD	2	S-XQFP-F68						Not Qualified	65536 bit			e0			.0015 Amp		17 ns
71V2556XS100BGGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260	.045 Amp	22 mm	5 ns
IDT7052L25PFM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	3					Not Qualified	16384 bit			e0			.0018 Amp		25 ns
IDT7052S35PFGM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3					Not Qualified	16384 bit			e3			.03 Amp		35 ns
M5M5V5636UG-16#B0	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	380 mA	524288 words	COMMON	2.5	2.5/3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	2.38 V	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B165	1	2.625 V		167 MHz		Not Qualified	18874368 bit	2.375 V	IT ALSO OPERATES AT 3.3V NOMINAL SUPPLY	e3			.03 Amp		3.8 ns
IDT70V3389S4BCGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	460 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3			133 MHz		Not Qualified	1179648 bit			e1	30	260	.015 Amp		4.2 ns
IDT70V3589S133DRG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	208	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	400 mA	65536 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3			133 MHz		Not Qualified	2359296 bit			e3			.03 Amp		4.2 ns
7005S15F	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	68	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	310 mA	8192 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-XQFP-F68						Not Qualified	65536 bit			e0			.015 Amp		15 ns
71V2556SA150BGGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	335 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		X-PBGA-B119	3	3.465 V		150 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260	.045 Amp	22 mm	3.8 ns
71321LA55JGI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V				Not Qualified	16384 bit	4.5 V		e3	30	260	.004 Amp		55 ns
IDT70V3389S4BCI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	460 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256				133 MHz		Not Qualified	1179648 bit			e0			.015 Amp		4.2 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.