APPLICATION SPECIFIC SRAM SRAM 391

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
IDT70V3389S5BFG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX18	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3			100 MHz		Not Qualified	1179648 bit			e1	30	260	.015 Amp		5 ns
IDT70V3389S6BCI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256				83 MHz		Not Qualified	1179648 bit			e0			.03 Amp		6 ns
IDT70T3399S166BCGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	510 mA	131072 words	COMMON		2.5,2.5/3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	128KX18	128K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3			166 MHz		Not Qualified	2359296 bit			e1	30	260	.02 Amp		12 ns
70V639S15PRFI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	128	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	490 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK	QFP128,.63X.87,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX18	128K	3.15 V	-40 Cel	TIN LEAD	QUAD	2	R-PQFP-G128	3	3.45 V				Not Qualified	2359296 bit	3.15 V		e0	30	225	.015 Amp		15 ns
70V658S15BFG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	440 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V				Not Qualified	2359296 bit	3.15 V		e1	30	260	.015 Amp		15 ns
70V659S15BCGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	490 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V				Not Qualified	4718592 bit	3.15 V		e1	30	260	.015 Amp		15 ns
IDT70V3589S133BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	400 mA	65536 words	COMMON		2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3			133 MHz		Not Qualified	2359296 bit			e1	30	260	.03 Amp		4.2 ns
7005S20GB	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	68	PGA	SQUARE	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL	ASYNCHRONOUS	370 mA	8192 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-XPGA-P68						Not Qualified	65536 bit			e0			.03 Amp		20 ns
7005L17F	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	68	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	260 mA	8192 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	QUAD	2	S-XQFP-F68						Not Qualified	65536 bit			e0			.0015 Amp		17 ns
71V2556XS100BGGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260	.045 Amp	22 mm	5 ns
IDT7052L25PFM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	3					Not Qualified	16384 bit			e0			.0018 Amp		25 ns
IDT7052S35PFGM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3					Not Qualified	16384 bit			e3			.03 Amp		35 ns
7005S20JB	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL	ASYNCHRONOUS	370 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1					Not Qualified	65536 bit			e0	20	225	.03 Amp		20 ns
M5M5V5636GP-16I#S0	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	380 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	512KX36	512K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	167 MHz	14 mm	Not Qualified	18874368 bit	3.135 V		e3			.03 Amp	20 mm	3.8 ns
IDT70T3399S166BCI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	510 mA	131072 words	COMMON		2.5,2.5/3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	128KX18	128K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256				166 MHz		Not Qualified	2359296 bit			e0			.02 Amp		12 ns
IDT7009L20PFG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	131072 words	COMMON	5	5	8	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3					Not Qualified	1048576 bit			e3	30	260	.003 Amp		20 ns
7005S25JB	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL	ASYNCHRONOUS	340 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1					Not Qualified	65536 bit			e0	20	225	.03 Amp		25 ns
IDT70V9099L9PFG8	Renesas Electronics	APPLICATION SPECIFIC SRAM		100	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	240 mA	131072 words	COMMON	3.3	3.3	8	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm		3-STATE	128KX8	128K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3			66 MHz		Not Qualified	1048576 bit			e3	30	260	.002 Amp		9 ns
IDT70V9289L9PFG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	230 mA	65536 words	COMMON	3.3	3.3	16	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3			66 MHz		Not Qualified	1048576 bit			e3	30	260	.002 Amp		20 ns
K1B1616B2B-FI70T	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B54	1					Not Qualified	16777216 bit								70 ns
K1S1616B1B-BI700	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B48	1					Not Qualified	16777216 bit			e3					70 ns
K1S1616B1B-FI70T	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48	1					Not Qualified	16777216 bit								70 ns
K7D161871B-HC30T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	COMMON		1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	2.37 V	0 Cel		BOTTOM		R-PBGA-B153	1			300 MHz		Not Qualified	18874368 bit						.1 Amp		1.9 ns
K1B1616B2B-HI70	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B54	1					Not Qualified	16777216 bit			e3					70 ns
K7D163671B-HC33T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	524288 words	COMMON		1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	2.37 V	0 Cel		BOTTOM		R-PBGA-B153	1			333 MHz		Not Qualified	18874368 bit								1.7 ns
K7I320884M-FC16T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	8	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX8	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165	1	1.9 V	1.4 mm	167 MHz	15 mm	Not Qualified	33554432 bit	1.7 V					.19 Amp	17 mm	.5 ns
K1B1616B2B-BI700	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B54	1					Not Qualified	16777216 bit			e3					70 ns
K1S3216BCC-FI70T	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM		R-PBGA-B48	1	2.1 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V					.0001 Amp	8 mm	70 ns
K7P403623M-HC75T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON		2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel		BOTTOM		R-PBGA-B119	1					Not Qualified	4718592 bit						.06 Amp		7.5 ns
K1S3216BCC-FI85T	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM		R-PBGA-B48	1	2.1 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V					.0001 Amp	8 mm	85 ns
K7D161871B-HC37T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	1048576 words	COMMON		1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	2.37 V	0 Cel		BOTTOM		R-PBGA-B153	1			375 MHz		Not Qualified	18874368 bit						.1 Amp		1.7 ns
K7I320884M-FC20T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	550 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	8	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX8	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165	1	1.9 V	1.4 mm	200 MHz	15 mm	Not Qualified	33554432 bit	1.7 V					.2 Amp	17 mm	.45 ns
K7P403623M-HC65T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	660 mA	131072 words	COMMON		2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel		BOTTOM		R-PBGA-B119	1					Not Qualified	4718592 bit						.06 Amp		6.5 ns
K7J320882M-FC25T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	650 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	8	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX8	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165	1	1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	33554432 bit	1.7 V					.23 Amp	17 mm	.45 ns
K7P401823M-HC75T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON		2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.15 V	0 Cel		BOTTOM		R-PBGA-B119	1					Not Qualified	4718592 bit						.06 Amp		7.5 ns
K7D163671B-HC30T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	400 mA	524288 words	COMMON		1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	2.37 V	0 Cel		BOTTOM		R-PBGA-B153	1			300 MHz		Not Qualified	18874368 bit								1.9 ns
K7P401823M-HC65T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	550 mA	262144 words	COMMON		2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.15 V	0 Cel		BOTTOM		R-PBGA-B119	1					Not Qualified	4718592 bit						.06 Amp		6.5 ns
K7P403623M-HC70T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	550 mA	131072 words	COMMON		2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel		BOTTOM		R-PBGA-B119	1					Not Qualified	4718592 bit						.06 Amp		7 ns
K7D161871B-HC33T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	500 mA	1048576 words	COMMON		1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	2.37 V	0 Cel		BOTTOM		R-PBGA-B153	1			333 MHz		Not Qualified	18874368 bit						.1 Amp		1.7 ns
K7I320884M-FC25T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	650 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	8	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX8	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165	1	1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	33554432 bit	1.7 V					.23 Amp	17 mm	.45 ns
K7P401823M-HC70T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	500 mA	262144 words	COMMON		2.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.15 V	0 Cel		BOTTOM		R-PBGA-B119	1					Not Qualified	4718592 bit						.06 Amp		7 ns
K7J320882M-FC16T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	8	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX8	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165	1	1.9 V	1.4 mm	166 MHz	15 mm	Not Qualified	33554432 bit	1.7 V					.19 Amp	17 mm	.5 ns
K7D163671B-HC37T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	500 mA	524288 words	COMMON		1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	2.37 V	0 Cel		BOTTOM		R-PBGA-B153	1			375 MHz		Not Qualified	18874368 bit								1.7 ns
K1S1616B1B-BI70T	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B48	1					Not Qualified	16777216 bit			e3					70 ns
K1B1616B2B-BI70T	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B54	1					Not Qualified	16777216 bit			e3					70 ns
K1B1616B2B-BI70	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B54	1					Not Qualified	16777216 bit			e3					70 ns
K1B1616B2B-HI700	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B54	1					Not Qualified	16777216 bit			e3					70 ns
K7J320882M-FC20T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	550 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	8	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX8	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165	1	1.9 V	1.4 mm	200 MHz	15 mm	Not Qualified	33554432 bit	1.7 V					.2 Amp	17 mm	.45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.