Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
132 |
QIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
620 mA |
32768 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
QI132,2.1/2.3,100 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
R-PQIP-P132 |
Not Qualified |
524288 bit |
e0 |
.065 Amp |
55 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
940 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
2 |
R-PZIP-T64 |
Not Qualified |
1048576 bit |
e0 |
.125 Amp |
40 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
60 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
500 mA |
8192 words |
COMMON |
5 |
5 |
9 |
IN-LINE |
DIP60,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
2 |
R-XDIP-T60 |
Not Qualified |
73728 bit |
e0 |
.06 Amp |
40 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
58 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
640 mA |
16384 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP58,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
2 |
R-XDIP-T58 |
Not Qualified |
131072 bit |
e0 |
.15 Amp |
100 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
180 |
PGA |
CERAMIC |
NO |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
1400 mA |
4096 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA180(UNSPEC) |
SRAMs |
70 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
PERPENDICULAR |
4 |
Not Qualified |
65536 bit |
e0 |
.06 Amp |
25 ns |
||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
940 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
2 |
R-PZIP-T64 |
Not Qualified |
1048576 bit |
e0 |
.125 Amp |
50 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
58 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
380 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP58,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
2 |
R-XDIP-T58 |
Not Qualified |
65536 bit |
e0 |
.08 Amp |
100 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
940 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
2 |
R-PZIP-T64 |
Not Qualified |
1048576 bit |
e0 |
.125 Amp |
65 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
660 mA |
65536 words |
COMMON |
8 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
2 |
R-PZIP-T64 |
Not Qualified |
524288 bit |
e0 |
.065 Amp |
50 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
58 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
640 mA |
16384 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP58,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
2 |
R-XDIP-T58 |
Not Qualified |
131072 bit |
e0 |
.15 Amp |
100 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
660 mA |
65536 words |
COMMON |
8 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
2 |
R-PZIP-T64 |
Not Qualified |
524288 bit |
e0 |
.065 Amp |
40 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
60 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
870 mA |
16384 words |
COMMON |
5 |
5 |
9 |
IN-LINE |
DIP60,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
2 |
R-XDIP-T60 |
Not Qualified |
147456 bit |
e0 |
.12 Amp |
40 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
660 mA |
65536 words |
COMMON |
8 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
2 |
R-PZIP-T64 |
Not Qualified |
524288 bit |
e0 |
.065 Amp |
65 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
180 |
PGA |
CERAMIC |
NO |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
1340 mA |
4096 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA180(UNSPEC) |
SRAMs |
70 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
PERPENDICULAR |
4 |
Not Qualified |
65536 bit |
e0 |
.06 Amp |
35 ns |
||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
132 |
QIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
900 mA |
65536 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
QI132,2.1/2.3,100 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
R-PQIP-P132 |
Not Qualified |
1048576 bit |
e0 |
.125 Amp |
55 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
180 |
PGA |
CERAMIC |
NO |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
1320 mA |
4096 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA180(UNSPEC) |
SRAMs |
70 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
PERPENDICULAR |
4 |
Not Qualified |
65536 bit |
e0 |
.06 Amp |
45 ns |
||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
180 |
PGA |
CERAMIC |
NO |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
1360 mA |
4096 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA180(UNSPEC) |
SRAMs |
70 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
PERPENDICULAR |
4 |
Not Qualified |
65536 bit |
e0 |
.06 Amp |
30 ns |
||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
132 |
QIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
620 mA |
32768 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
QI132,2.1/2.3,100 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
R-PQIP-P132 |
Not Qualified |
524288 bit |
e0 |
.065 Amp |
45 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
58 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
380 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP58,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
2 |
R-XDIP-T58 |
Not Qualified |
65536 bit |
e0 |
.08 Amp |
100 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
132 |
QIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
900 mA |
65536 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
QI132,2.1/2.3,100 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
R-PQIP-P132 |
Not Qualified |
1048576 bit |
e0 |
.125 Amp |
45 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
60 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
500 mA |
8192 words |
COMMON |
5 |
5 |
9 |
IN-LINE |
DIP60,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
2 |
R-XDIP-T60 |
Not Qualified |
73728 bit |
e0 |
.06 Amp |
40 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
180 |
PGA |
CERAMIC |
NO |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
1320 mA |
4096 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA180(UNSPEC) |
SRAMs |
70 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
PERPENDICULAR |
4 |
Not Qualified |
65536 bit |
e0 |
.06 Amp |
45 ns |
||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
58 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
640 mA |
16384 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP58,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
2 |
R-XDIP-T58 |
Not Qualified |
131072 bit |
e0 |
.15 Amp |
100 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
MILITARY |
64 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
MIL-STD-883 Class B (Modified) |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1130 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP64,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-55 Cel |
TIN LEAD |
DUAL |
2 |
R-XDIP-T64 |
Not Qualified |
1048576 bit |
e0 |
.245 Amp |
30 ns |
||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
660 mA |
65536 words |
COMMON |
8 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
2 |
R-PZIP-T64 |
Not Qualified |
524288 bit |
e0 |
.065 Amp |
40 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
180 |
PGA |
CERAMIC |
NO |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
1360 mA |
4096 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA180(UNSPEC) |
SRAMs |
70 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
PERPENDICULAR |
4 |
Not Qualified |
65536 bit |
e0 |
.06 Amp |
30 ns |
||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
940 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
2 |
R-PZIP-T64 |
Not Qualified |
1048576 bit |
e0 |
.125 Amp |
65 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
60 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
870 mA |
16384 words |
COMMON |
5 |
5 |
9 |
IN-LINE |
DIP60,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
2 |
R-XDIP-T60 |
Not Qualified |
147456 bit |
e0 |
.12 Amp |
40 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
58 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
380 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP58,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
2 |
R-XDIP-T58 |
Not Qualified |
65536 bit |
e0 |
.08 Amp |
100 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
180 |
PGA |
CERAMIC |
NO |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
1400 mA |
4096 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA180(UNSPEC) |
SRAMs |
70 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
PERPENDICULAR |
4 |
Not Qualified |
65536 bit |
e0 |
.06 Amp |
25 ns |
||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
58 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
32768 words |
COMMON |
8 |
IN-LINE |
DIP58,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
2 |
R-XDIP-T58 |
Not Qualified |
262144 bit |
e0 |
50 ns |
|||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
MILITARY |
64 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
MIL-STD-883 Class B (Modified) |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
790 mA |
65536 words |
COMMON |
8 |
IN-LINE |
DIP64,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
64KX8 |
64K |
4.5 V |
-55 Cel |
TIN LEAD |
DUAL |
2 |
R-XDIP-T64 |
Not Qualified |
524288 bit |
e0 |
.125 Amp |
30 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
58 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
380 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP58,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
2 |
R-XDIP-T58 |
Not Qualified |
65536 bit |
e0 |
.08 Amp |
100 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
180 |
PGA |
CERAMIC |
NO |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
1340 mA |
4096 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA180(UNSPEC) |
SRAMs |
70 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
PERPENDICULAR |
4 |
Not Qualified |
65536 bit |
e0 |
.06 Amp |
35 ns |
||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
940 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
2 |
R-PZIP-T64 |
Not Qualified |
1048576 bit |
e0 |
.125 Amp |
50 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
58 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
640 mA |
16384 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP58,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
2 |
R-XDIP-T58 |
Not Qualified |
131072 bit |
e0 |
.15 Amp |
100 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
660 mA |
65536 words |
COMMON |
8 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
2 |
R-PZIP-T64 |
Not Qualified |
524288 bit |
e0 |
.065 Amp |
50 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
132 |
QIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
900 mA |
65536 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
QI132,2.1/2.3,100 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
R-PQIP-P132 |
Not Qualified |
1048576 bit |
e0 |
.125 Amp |
45 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
132 |
QIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
620 mA |
32768 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
QI132,2.1/2.3,100 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
R-PQIP-P132 |
Not Qualified |
524288 bit |
e0 |
.065 Amp |
55 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
64 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
660 mA |
65536 words |
COMMON |
8 |
IN-LINE |
ZIP64/68,.1,.1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
ZIG-ZAG |
2 |
R-PZIP-T64 |
Not Qualified |
524288 bit |
e0 |
.065 Amp |
65 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
MILITARY |
121 |
PGA |
CERAMIC |
NO |
CMOS |
MIL-STD-883 Class B (Modified) |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
1240 mA |
1024 words |
COMMON |
5 |
5 |
36 |
GRID ARRAY |
PGA121(UNSPEC) |
SRAMs |
125 Cel |
3-STATE |
1KX36 |
1K |
4.5 V |
-55 Cel |
TIN LEAD |
PERPENDICULAR |
2 |
Not Qualified |
36864 bit |
e0 |
.12 Amp |
25 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
132 |
QIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
620 mA |
32768 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
QI132,2.1/2.3,100 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
R-PQIP-P132 |
Not Qualified |
524288 bit |
e0 |
.065 Amp |
45 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM MODULE |
COMMERCIAL |
132 |
QIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
900 mA |
65536 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
QI132,2.1/2.3,100 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
R-PQIP-P132 |
Not Qualified |
1048576 bit |
e0 |
.125 Amp |
55 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.