153 SRAM 282

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Standby Current	Length
MT57V256H18PB-5	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	262144 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	256KX18	256K	2.4 V	TIN LEAD	BOTTOM	R-PBGA-B153	2.6 V	2.4 mm	200 MHz	14 mm	Not Qualified	4718592 bit	2.4 V	e0	.025 Amp	22 mm
MT57L256H18PB-5.5TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm		256KX18	256K		TIN LEAD	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	e0		22 mm
MT57V128H36PB-6TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		2.5		36	GRID ARRAY			1.27 mm		128KX36	128K		TIN LEAD	BOTTOM	R-PBGA-B153	2.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	2.4 V	e0		22 mm
MT57L128L36PB-5.5	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	660 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	128KX36	128K	3.1 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm	182 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	e0	.025 Amp	22 mm
MT57L128H36PB-7	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	560 mA	131072 words	COMMON	3.3	1.5,3.3	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	128KX36	128K	3.1 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm	143 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	e0	.025 Amp	22 mm
MT57V256H18PB-6	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	262144 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	256KX18	256K	2.4 V	TIN LEAD	BOTTOM	R-PBGA-B153	2.6 V	2.4 mm	167 MHz	14 mm	Not Qualified	4718592 bit	2.4 V	e0	.025 Amp	22 mm
MT57L256H18PB-5TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm		256KX18	256K		TIN LEAD	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	e0		22 mm
MT57V128H36PB-5.5	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	570 mA	131072 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	128KX36	128K	2.4 V	TIN LEAD	BOTTOM	R-PBGA-B153	2.6 V	2.4 mm	182 MHz	14 mm	Not Qualified	4718592 bit	2.4 V	e0	.025 Amp	22 mm
MT57L128H36PB-7TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm		128KX36	128K		TIN LEAD	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	e0		22 mm
MT57V256H18PB-5.5TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	GRID ARRAY			1.27 mm		256KX18	256K		TIN LEAD	BOTTOM	R-PBGA-B153	2.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	2.4 V	e0		22 mm
MT57L256H18PB-4.4TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm		256KX18	256K		TIN LEAD	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	e0		22 mm
MT57L256H18PB-6	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	570 mA	262144 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	256KX18	256K	3.1 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm	167 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	e0	.025 Amp	22 mm
MT57L256L18PB-6TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm		256KX18	256K		TIN LEAD	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	e0		22 mm
MT57V256H18PB-6TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	GRID ARRAY			1.27 mm		256KX18	256K		TIN LEAD	BOTTOM	R-PBGA-B153	2.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	2.4 V	e0		22 mm
MT57V128H36PB-7TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		2.5		36	GRID ARRAY			1.27 mm		128KX36	128K		TIN LEAD	BOTTOM	R-PBGA-B153	2.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	2.4 V	e0		22 mm
MT57L128H36PB-4.4TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm		128KX36	128K		TIN LEAD	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	e0		22 mm
MT57L128L36PB-5.5TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm		128KX36	128K		TIN LEAD	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	e0		22 mm
MT57L128H36PB-6TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm		128KX36	128K		TIN LEAD	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	e0		22 mm
MT57L128H36PB-5.5TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm		128KX36	128K		TIN LEAD	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	e0		22 mm
MT57L128H36PB-5.5	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	660 mA	131072 words	COMMON	3.3	1.5,3.3	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	128KX36	128K	3.1 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm	182 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	e0	.025 Amp	22 mm
MT57V128H36PB-4.4	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	630 mA	131072 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	128KX36	128K	2.4 V	TIN LEAD	BOTTOM	R-PBGA-B153	2.6 V	2.4 mm	225 MHz	14 mm	Not Qualified	4718592 bit	2.4 V	e0	.025 Amp	22 mm
MT57L256L18PB-7TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm		256KX18	256K		TIN LEAD	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	e0		22 mm
MT57L256H18PB-5	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	640 mA	262144 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	256KX18	256K	3.1 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm	200 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	e0	.025 Amp	22 mm
MT57L128L36PB-6TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm		128KX36	128K		TIN LEAD	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	e0		22 mm
MT57L256L18PB-5.5	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	256KX18	256K	3.1 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm	182 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	e0	.025 Amp	22 mm
MT57L128L36PB-8	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	128KX36	128K	3.1 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm	125 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	e0	.025 Amp	22 mm
MT57L256H18PB-7	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	520 mA	262144 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	256KX18	256K	3.1 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm	143 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	e0	.025 Amp	22 mm
MT57L256H18PB-4.4	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	670 mA	262144 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	256KX18	256K	3.1 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm	225 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	e0	.025 Amp	22 mm
MT57L256L18PB-7	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	520 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	256KX18	256K	3.1 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm	143 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	e0	.025 Amp	22 mm
MT57L128H36PB-5TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm		128KX36	128K		TIN LEAD	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	e0		22 mm
MT57V256H18PB-4.4TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	GRID ARRAY			1.27 mm		256KX18	256K		TIN LEAD	BOTTOM	R-PBGA-B153	2.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	2.4 V	e0		22 mm
MT57V256H18PB-7	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	460 mA	262144 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	256KX18	256K	2.4 V	TIN LEAD	BOTTOM	R-PBGA-B153	2.6 V	2.4 mm	143 MHz	14 mm	Not Qualified	4718592 bit	2.4 V	e0	.025 Amp	22 mm
MT57V256H18PB-7TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	GRID ARRAY			1.27 mm		256KX18	256K		TIN LEAD	BOTTOM	R-PBGA-B153	2.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	2.4 V	e0		22 mm
MT57V128H36PB-5TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		2.5		36	GRID ARRAY			1.27 mm		128KX36	128K		TIN LEAD	BOTTOM	R-PBGA-B153	2.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	2.4 V	e0		22 mm
MT57L256L18PB-6	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	570 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	256KX18	256K	3.1 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm	167 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	e0	.025 Amp	22 mm
MT57V256H18PB-5TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	GRID ARRAY			1.27 mm		256KX18	256K		TIN LEAD	BOTTOM	R-PBGA-B153	2.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	2.4 V	e0		22 mm
MT57L256H18PB-5.5	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	262144 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	256KX18	256K	3.1 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm	182 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	e0	.025 Amp	22 mm
MT57L128L36PB-8TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm		128KX36	128K		TIN LEAD	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	e0		22 mm
MT57L256L18PB-8	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	256KX18	256K	3.1 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm	125 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	e0	.025 Amp	22 mm
MT57L128L36PB-7TR	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm		128KX36	128K		TIN LEAD	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.1 V	e0		22 mm
MT57L128L36PB-6	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	620 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	128KX36	128K	3.1 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153	3.6 V	2.4 mm	167 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	e0	.025 Amp	22 mm
MT57V128H36PB-6	Micron Technology	CACHE SRAM	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	540 mA	131072 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	3-STATE	128KX36	128K	2.4 V	TIN LEAD	BOTTOM	R-PBGA-B153	2.6 V	2.4 mm	167 MHz	14 mm	Not Qualified	4718592 bit	2.4 V	e0	.025 Amp	22 mm

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.