153 SRAM 282

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
K7D161874B-HC300	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.63 V	2.21 mm		14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0				22 mm	.2 ns
K7D401871M-H2200	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	GRID ARRAY			1.27 mm			256KX18	256K				BOTTOM	R-PBGA-B153		2.6 V	2.21 mm		14 mm	Not Qualified	4718592 bit	2.4 V						22 mm
K7D321874A-HC33	Samsung	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	2097152 words	COMMON		1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153				333 MHz		Not Qualified	37748736 bit			e0			.3 Amp		2 ns
K7D401871M-HC160	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	262144 words	COMMON		1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm		3-STATE	256KX18	256K	2.4 V			BOTTOM	R-PBGA-B153				167 MHz		Not Qualified	4718592 bit						.05 Amp
K7D163671M-HC30	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	670 mA	524288 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	2.37 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.63 V	2.55 mm	303 MHz	14 mm	Not Qualified	18874368 bit	2.37 V		e0				22 mm	1.9 ns
KM718S4017H-6000	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	GRID ARRAY			1.27 mm			256KX18	256K				BOTTOM	R-PBGA-B153		2.6 V	2.21 mm		14 mm	Not Qualified	4718592 bit	2.4 V	SELF-TIMED LATE WRITE; ALSO REQUIRES 1.5V OUTPUT SUPPLY					22 mm	3.3 ns
KM736S4017H-4400	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		2.5		36	GRID ARRAY			1.27 mm			128KX36	128K				BOTTOM	R-PBGA-B153		2.6 V	2.21 mm		14 mm	Not Qualified	4718592 bit	2.4 V	SELF-TIMED LATE WRITE; ALSO REQUIRES 1.5V OUTPUT SUPPLY					22 mm	2.4 ns
K7D321874C-GC370	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	2097152 words	COMMON	2.5	1.8/2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B153	2	2.6 V	2.21 mm	375 MHz	14 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.3 Amp	22 mm
K7D323674C-HC40	Samsung	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	1048576 words	COMMON		1.8/2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B153				400 MHz		Not Qualified	37748736 bit			e1			.3 Amp
K7D803671B-HC37	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	880 mA	262144 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	2.37 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.63 V	2.21 mm	370 MHz	14 mm	Not Qualified	9437184 bit	2.37 V	PIPELINED ARCHITECTURE	e0			.15 Amp	22 mm	.2 ns
K7D161888M-HC33	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	1048576 words	COMMON	1.8	1.5,1.8	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		1.9 V	2.55 mm	333 MHz	14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.15 Amp	22 mm	.1 ns
K7D403671M-HC20T	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	131072 words	COMMON		1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm		3-STATE	128KX36	128K	2.4 V			BOTTOM	R-PBGA-B153				200 MHz		Not Qualified	4194304 bit						.05 Amp		2.7 ns
KM736S4017H-6000	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		2.5		36	GRID ARRAY			1.27 mm			128KX36	128K				BOTTOM	R-PBGA-B153		2.6 V	2.21 mm		14 mm	Not Qualified	4718592 bit	2.4 V	SELF-TIMED LATE WRITE; ALSO REQUIRES 1.5V OUTPUT SUPPLY					22 mm	3.3 ns
K7D163671B-HC300	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	524288 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	2.37 V	0 Cel		BOTTOM	R-PBGA-B153	1	2.63 V	2.21 mm	300 MHz	14 mm	Not Qualified	18874368 bit	2.37 V	PIPELINED ARCHITECTURE					22 mm	.2 ns
K7D321874C-GC33	Samsung	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	2097152 words	COMMON		1.8/2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B153	3			333 MHz		Not Qualified	37748736 bit			e1			.3 Amp
K7D321874A-HC370	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		2MX18	2M		0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.6 V	2.21 mm		14 mm	Not Qualified	37748736 bit	1.7 V		e0				22 mm
K7D163671B-HC40	Samsung	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON		1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	2.37 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153	3			400 MHz		Not Qualified	18874368 bit			e0
K7D401871-H20	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	GRID ARRAY			1.27 mm			256KX18	256K				BOTTOM	R-PBGA-B153		2.6 V	2.21 mm		14 mm	Not Qualified	4718592 bit	2.4 V	ALSO REQUIRES 1.5V I/O SUPPLY					22 mm	2.7 ns
K7D161888M-HC37	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	750 mA	1048576 words	COMMON	1.8	1.5,1.8	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		1.9 V	2.55 mm	370 MHz	14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.15 Amp	22 mm	.1 ns
K7D161871M-HC37	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	800 mA	1048576 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	2.37 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.63 V	2.55 mm	370 MHz	14 mm	Not Qualified	18874368 bit	2.37 V		e0			.15 Amp	22 mm	1.7 ns
K7D161888B-HC37	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	1048576 words	COMMON	1.8	1.5,1.8	18	GRID ARRAY, HEAT SINK/SLUG	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153	3	1.9 V	2.21 mm	370 MHz	14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.1 Amp	22 mm	1.7 ns
K7D161871B-HC33T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	1048576 words	COMMON		1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	2.37 V	0 Cel		BOTTOM	R-PBGA-B153	1			333 MHz		Not Qualified	18874368 bit						.1 Amp		1.7 ns
K7D161888M-HC300	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel		BOTTOM	R-PBGA-B153		1.9 V	2.21 mm		14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE					22 mm
K7D323674A-GC40	Samsung	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	960 mA	1048576 words	COMMON		1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B153	1			400 MHz		Not Qualified	37748736 bit			e3			.3 Amp		2 ns
K7D803671C-HC33	Samsung	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON		1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	2.37 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153	3			333 MHz		Not Qualified	9437184 bit			e0			.1 Amp		1.7 ns
K7D161888B-HC330	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel		BOTTOM	R-PBGA-B153		1.9 V	2.21 mm		14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE		30	230		22 mm	.2 ns
K7D323674C-HC400	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	1048576 words	COMMON	2.5	1.8/2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.6 V	2.21 mm	400 MHz	14 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.3 Amp	22 mm
K7D321874A-GC400	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		2MX18	2M		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B153	2	2.6 V	2.21 mm		14 mm	Not Qualified	37748736 bit	1.7 V		e1				22 mm
K7D323674A-GC33	Samsung	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	900 mA	1048576 words	COMMON		1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B153	1			333 MHz		Not Qualified	37748736 bit			e3			.3 Amp		2 ns
KM718S4017H-4400	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	GRID ARRAY			1.27 mm			256KX18	256K				BOTTOM	R-PBGA-B153		2.6 V	2.21 mm		14 mm	Not Qualified	4718592 bit	2.4 V	SELF-TIMED LATE WRITE; ALSO REQUIRES 1.5V OUTPUT SUPPLY					22 mm	2.4 ns
K7D321874C-GC37	Samsung	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	2097152 words	COMMON		1.8/2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B153	3			375 MHz		Not Qualified	37748736 bit			e1			.3 Amp
K7D403671M-H16	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		2.5		36	GRID ARRAY			1.27 mm			128KX36	128K				BOTTOM	R-PBGA-B153		2.6 V	2.21 mm		14 mm	Not Qualified	4718592 bit	2.4 V						22 mm	3.3 ns
K7D801871B-HC300	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.63 V	2.21 mm		14 mm	Not Qualified	9437184 bit	2.37 V	PIPELINED ARCHITECTURE	e0				22 mm	.2 ns
K7D403671M-HC25T	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	131072 words	COMMON		1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm		3-STATE	128KX36	128K	2.4 V			BOTTOM	R-PBGA-B153				250 MHz		Not Qualified	4194304 bit						.05 Amp		2.2 ns
K7D163674B-HC300	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		512KX36	512K		0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.63 V	2.21 mm		14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0				22 mm	.2 ns
K7D801871C-HC330	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.63 V	2.21 mm		14 mm	Not Qualified	9437184 bit	2.37 V	PIPELINED ARCHITECTURE	e0				22 mm	.2 ns
K7D323674A-HC50	Samsung	DDR SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1150 mA	1048576 words	COMMON	2.5	1.5,1.8	36	GRID ARRAY, HEAT SINK/SLUG	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153	3	2.6 V	2.75 mm	500 MHz	14 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.3 Amp	22 mm	2.5 ns
K7D161888B-HC250	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		1.9 V	2.21 mm		14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0				22 mm	.2 ns
K7D321874C-HC330	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	2097152 words	COMMON	2.5	1.8/2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.6 V	2.21 mm	333 MHz	14 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.3 Amp	22 mm
KM718S4017H-5	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	262144 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm		3-STATE	256KX18	256K	2.4 V			BOTTOM	R-PBGA-B153		2.6 V	2.21 mm	200 MHz	14 mm	Not Qualified	4718592 bit	2.4 V	SELF-TIMED LATE WRITE; ALSO REQUIRES 1.5V OUTPUT SUPPLY				.05 Amp	22 mm	2.7 ns
K7D163671B-HC33	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	524288 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY, HEAT SINK/SLUG	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	2.37 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153	3	2.63 V	2.21 mm	333 MHz	14 mm	Not Qualified	18874368 bit	2.37 V	PIPELINED ARCHITECTURE	e0				22 mm	1.7 ns
K7D403671M-H25	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		2.5		36	GRID ARRAY			1.27 mm			128KX36	128K				BOTTOM	R-PBGA-B153		2.6 V	2.21 mm		14 mm	Not Qualified	4718592 bit	2.4 V						22 mm	2.4 ns
K7D163671B-HC37T	Samsung	APPLICATION SPECIFIC SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	524288 words	COMMON		1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	2.37 V	0 Cel		BOTTOM	R-PBGA-B153	1			375 MHz		Not Qualified	18874368 bit								1.7 ns
K7D161888M-HC250	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel		BOTTOM	R-PBGA-B153		1.9 V	2.21 mm		14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE					22 mm
K7D401871M-HC16T	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	262144 words	COMMON		1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm		3-STATE	256KX18	256K	2.4 V			BOTTOM	R-PBGA-B153				167 MHz		Not Qualified	4718592 bit						.05 Amp
K7D161888M-HC370	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel		BOTTOM	R-PBGA-B153		1.9 V	2.21 mm		14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE					22 mm
K7D803671C-HC330	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.63 V	2.21 mm		14 mm	Not Qualified	9437184 bit	2.37 V	PIPELINED ARCHITECTURE	e0				22 mm	.2 ns
K7D163674B-HC33T	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		512KX36	512K		0 Cel		BOTTOM	R-PBGA-B153		2.63 V	2.21 mm		14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE					22 mm	.2 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.