153 SRAM 282

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
K7D803671B-HC30	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	670 mA	262144 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	2.37 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.63 V	2.21 mm	300 MHz	14 mm	Not Qualified	9437184 bit	2.37 V	PIPELINED ARCHITECTURE	e0	.15 Amp	22 mm	.2 ns
MCM64E836FC3.3R	NXP Semiconductors	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words				36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM	R-PBGA-B153		2.625 V	2.77 mm		14 mm		9437184 bit	2.375 V				22 mm
MCM64E836FC3.0R	NXP Semiconductors	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words				36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM	R-PBGA-B153		2.625 V	2.77 mm		14 mm		9437184 bit	2.375 V				22 mm
MCM64E836FC3.0	NXP Semiconductors	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words				36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM	R-PBGA-B153		2.625 V	2.77 mm		14 mm		9437184 bit	2.375 V				22 mm
MCM64E918FC3.3	NXP Semiconductors	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words				18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM	R-PBGA-B153		2.625 V	2.77 mm		14 mm		9437184 bit	2.375 V				22 mm
MCM64E918FC3.0R	NXP Semiconductors	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words				18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM	R-PBGA-B153		2.625 V	2.77 mm		14 mm		9437184 bit	2.375 V				22 mm
MCM64E918FC4.0R	NXP Semiconductors	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words				18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM	R-PBGA-B153		2.625 V	2.77 mm		14 mm		9437184 bit	2.375 V				22 mm
MCM64E836FC4.0	NXP Semiconductors	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words				36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM	R-PBGA-B153		2.625 V	2.77 mm		14 mm		9437184 bit	2.375 V				22 mm
MCM64E918FC3.3R	NXP Semiconductors	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words				18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM	R-PBGA-B153		2.625 V	2.77 mm		14 mm		9437184 bit	2.375 V				22 mm
MCM64E918FC3.0	NXP Semiconductors	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words				18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM	R-PBGA-B153		2.625 V	2.77 mm		14 mm		9437184 bit	2.375 V				22 mm
MCM64E836FC4.0R	NXP Semiconductors	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words				36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM	R-PBGA-B153		2.625 V	2.77 mm		14 mm		9437184 bit	2.375 V				22 mm
MCM64E836FC3.3	NXP Semiconductors	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words				36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM	R-PBGA-B153		2.625 V	2.77 mm		14 mm		9437184 bit	2.375 V				22 mm
MCM64E918FC4.0	NXP Semiconductors	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words				18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM	R-PBGA-B153		2.625 V	2.77 mm		14 mm		9437184 bit	2.375 V				22 mm
TC55WK837XB-300	Toshiba	CACHE SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM	R-PBGA-B153		2.625 V	2.26 mm		14 mm	Not Qualified	9437184 bit	2.375 V				22 mm	.4 ns
TC55YK1636XB-500	Toshiba	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	524288 words	COMMON		1.5,1.8	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	1.71 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153						Not Qualified	18874368 bit			e0	.02 Amp		2.3 ns
TC55YK1618AYB-800	Toshiba	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel	TIN LEAD	BOTTOM	R-CBGA-B153		1.89 V	2.75 mm		14 mm	Not Qualified	18874368 bit	1.71 V		e0		22 mm	.2 ns
TC55YK1636AYB-500	Toshiba	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY			1.27 mm	70 Cel		512KX36	512K		0 Cel	TIN LEAD	BOTTOM	R-CBGA-B153		1.89 V	2.75 mm		14 mm	Not Qualified	18874368 bit	1.71 V		e0		22 mm	.3 ns
TC55YK1636XB-400	Toshiba	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	524288 words	COMMON		1.5,1.8	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	1.71 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153						Not Qualified	18874368 bit			e0	.02 Amp		2.5 ns
TC55YK1636AYB-800	Toshiba	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY			1.27 mm	70 Cel		512KX36	512K		0 Cel	TIN LEAD	BOTTOM	R-CBGA-B153		1.89 V	2.75 mm		14 mm	Not Qualified	18874368 bit	1.71 V		e0		22 mm	.2 ns
TC55YK1618AYB-500	Toshiba	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel	TIN LEAD	BOTTOM	R-CBGA-B153		1.89 V	2.75 mm		14 mm	Not Qualified	18874368 bit	1.71 V		e0		22 mm	.3 ns
TC55YK1636XB-666	Toshiba	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	524288 words	COMMON		1.5,1.8	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	1.71 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153						Not Qualified	18874368 bit			e0	.02 Amp		2 ns
TC55YK1636AYB-666	Toshiba	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY			1.27 mm	70 Cel		512KX36	512K		0 Cel	TIN LEAD	BOTTOM	R-CBGA-B153		1.89 V	2.75 mm		14 mm	Not Qualified	18874368 bit	1.71 V		e0		22 mm	.2 ns
TC55YK1618XB-666	Toshiba	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	760 mA	1048576 words	COMMON		1.5,1.8	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	1.71 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153						Not Qualified	18874368 bit			e0	.02 Amp		2 ns
TC55YK1618XB-500	Toshiba	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	760 mA	1048576 words	COMMON		1.5,1.8	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	1.71 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153						Not Qualified	18874368 bit			e0	.02 Amp		2.3 ns
TC55YK1618XB-400	Toshiba	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	760 mA	1048576 words	COMMON		1.5,1.8	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	1.71 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B153						Not Qualified	18874368 bit			e0	.02 Amp		2.5 ns
TC55YK1618AYB-666	Toshiba	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel	TIN LEAD	BOTTOM	R-CBGA-B153		1.89 V	2.75 mm		14 mm	Not Qualified	18874368 bit	1.71 V		e0		22 mm	.2 ns
TC55WK837XB-333	Toshiba	CACHE SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM	R-PBGA-B153		2.625 V	2.26 mm		14 mm	Not Qualified	9437184 bit	2.375 V				22 mm	.4 ns
K7D163688M-HC30	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	670 mA	524288 words	COMMON	1.8	1.5,1.8	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		1.9 V	2.55 mm	303 MHz	14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0		22 mm	.1 ns
K7D403671M-HC220	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	131072 words	COMMON		1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm		3-STATE	128KX36	128K	2.4 V			BOTTOM	R-PBGA-B153				227 MHz		Not Qualified	4194304 bit				.05 Amp		2.2 ns
K7D323674A-GC370	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		1MX36	1M		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B153	2	2.6 V	2.21 mm		14 mm	Not Qualified	37748736 bit	1.7 V		e1		22 mm
KM718S4017H-44	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	262144 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm		3-STATE	256KX18	256K	2.4 V			BOTTOM	R-PBGA-B153		2.6 V	2.21 mm	227 MHz	14 mm	Not Qualified	4718592 bit	2.4 V	SELF-TIMED LATE WRITE; ALSO REQUIRES 1.5V OUTPUT SUPPLY		.05 Amp	22 mm	2.4 ns
KM736S4017H-4000	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		2.5		36	GRID ARRAY			1.27 mm			128KX36	128K				BOTTOM	R-PBGA-B153		2.6 V	2.21 mm		14 mm	Not Qualified	4718592 bit	2.4 V				22 mm	2.4 ns
KM718S4017H-6	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	262144 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm		3-STATE	256KX18	256K	2.4 V			BOTTOM	R-PBGA-B153		2.6 V	2.21 mm	167 MHz	14 mm	Not Qualified	4718592 bit	2.4 V	SELF-TIMED LATE WRITE; ALSO REQUIRES 1.5V OUTPUT SUPPLY		.05 Amp	22 mm	3.3 ns
K7D161874B-HC27	Samsung	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	390 mA	1048576 words	COMMON		1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153				275 MHz		Not Qualified	18874368 bit			e0	.15 Amp		2 ns
K7D163671B-HC370	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	524288 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	2.37 V	0 Cel		BOTTOM	R-PBGA-B153	1	2.63 V	2.21 mm	375 MHz	14 mm	Not Qualified	18874368 bit	2.37 V	PIPELINED ARCHITECTURE			22 mm	.2 ns
K7D401871M-HC22T	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	262144 words	COMMON		1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm		3-STATE	256KX18	256K	2.4 V			BOTTOM	R-PBGA-B153				227 MHz		Not Qualified	4718592 bit				.05 Amp
K7P801822B-HC25	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.15 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		3.45 V	2.2 mm	250 MHz	14 mm	Not Qualified	9437184 bit	3.15 V	SEATED HT-CALCULATED	e0	.12 Amp	22 mm	2.3 ns
K7D163674B-HC37	Samsung	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	540 mA	524288 words	COMMON		1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153				375 MHz		Not Qualified	18874368 bit			e0			1.7 ns
K7D163674B-HC33	Samsung	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	490 mA	524288 words	COMMON		1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153				333 MHz		Not Qualified	18874368 bit			e0			1.7 ns
K7D803671B-HC33	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	750 mA	262144 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	2.37 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.63 V	2.21 mm	333 MHz	14 mm	Not Qualified	9437184 bit	2.37 V	PIPELINED ARCHITECTURE	e0	.15 Amp	22 mm	.2 ns
K7D161871M-HC30	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	620 mA	1048576 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	2.37 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.63 V	2.55 mm	303 MHz	14 mm	Not Qualified	18874368 bit	2.37 V		e0	.15 Amp	22 mm	1.9 ns
K7D321874A-GC33	Samsung	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	2097152 words	COMMON		1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B153	1			333 MHz		Not Qualified	37748736 bit			e3	.3 Amp		2 ns
K7P803622B-HC25	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	370 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		3.45 V	2.2 mm	250 MHz	14 mm	Not Qualified	9437184 bit	3.15 V	SEATED HT-CALCULATED	e0	.12 Amp	22 mm	2.3 ns
K7P801822B-HC16	Samsung	STANDARD SRAM	COMMERCIAL	153	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.15 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		3.45 V	2.2 mm	166.66 MHz	14 mm	Not Qualified	9437184 bit	3.15 V	SEATED HT-CALCULATED	e0	.12 Amp	22 mm	3 ns
K7D403671M-HC16T	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	131072 words	COMMON		1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm		3-STATE	128KX36	128K	2.4 V			BOTTOM	R-PBGA-B153				167 MHz		Not Qualified	4194304 bit				.05 Amp		3.3 ns
K7D321874C-HC37	Samsung	STANDARD SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	2097152 words	COMMON		1.8/2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B153	3			375 MHz		Not Qualified	37748736 bit			e1	.3 Amp
K7D403671M-HC250	Samsung	STANDARD SRAM		153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	131072 words	COMMON		1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm		3-STATE	128KX36	128K	2.4 V			BOTTOM	R-PBGA-B153				250 MHz		Not Qualified	4194304 bit				.05 Amp		2.2 ns
K7D163674B-HC370	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		512KX36	512K		0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.63 V	2.21 mm		14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0		22 mm	.2 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.