209 SRAM 93

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
K7Z167288B-HC35	Samsung	LATE-WRITE SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		1.8		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K			BOTTOM	R-PBGA-B209	1.95 V	2.2 mm		14 mm	Not Qualified	18874368 bit	1.7 V				22 mm	2.6 ns
K7Z163685A-HC27	Samsung	LATE-WRITE SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	1.8	1.8	36	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	TIN LEAD	BOTTOM	R-PBGA-B209	1.95 V	2.2 mm	275 MHz	14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0		22 mm	2.9 ns
K7N327245M-HC200	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		72	GRID ARRAY			1 mm	70 Cel		512KX72	512K			BOTTOM	R-PBGA-B209	2.625 V	2.2 mm		14 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE			22 mm	3.2 ns
K7N167245A-HC13	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	2.5	2.5	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	2.38 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B209	2.625 V	2.2 mm	133 MHz	14 mm	Not Qualified	18874368 bit	2.375 V		e0	.06 Amp	22 mm	4.2 ns
K7N327245M-HC15	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	2.5	2.5	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	512KX72	512K	2.38 V	TIN LEAD	BOTTOM	R-PBGA-B209	2.625 V	2.2 mm	149 MHz	14 mm	Not Qualified	37748736 bit	2.375 V		e0	.01 Amp	22 mm	3.8 ns
K7Z327285M-HC27	Samsung	STANDARD SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	1.8	1.8	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	512KX72	512K	1.7 V	TIN LEAD	BOTTOM	R-PBGA-B209	1.95 V	2.2 mm	275 MHz	14 mm	Not Qualified	37748736 bit	1.7 V		e0		22 mm	2 ns
K7N327245M-HC20	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	2.5	2.5	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	512KX72	512K	2.38 V	TIN LEAD	BOTTOM	R-PBGA-B209	2.625 V	2.2 mm	200 MHz	14 mm	Not Qualified	37748736 bit	2.375 V		e0	.01 Amp	22 mm	3.2 ns
K7Z163685A-HC25	Samsung	LATE-WRITE SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	1.8	1.8	36	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	TIN LEAD	BOTTOM	R-PBGA-B209	1.95 V	2.2 mm	250 MHz	14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0		22 mm	3 ns
K7Z167285A-HC20	Samsung	LATE-WRITE SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	COMMON	1.8	1.8	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	1.7 V	TIN LEAD	BOTTOM	R-PBGA-B209	1.95 V	2.2 mm	200 MHz	14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0		22 mm	3.2 ns
K7N327245M-HC13	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	2.5	2.5	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	512KX72	512K	2.38 V	TIN LEAD	BOTTOM	R-PBGA-B209	2.625 V	2.2 mm	133 MHz	14 mm	Not Qualified	37748736 bit	2.375 V		e0	.01 Amp	22 mm	4.2 ns
K7Z167285A-HC250	Samsung	LATE-WRITE SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		1.8		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K			BOTTOM	R-PBGA-B209	1.95 V	2.2 mm		14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE			22 mm	3 ns
K7Z167285A-HC25	Samsung	LATE-WRITE SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	COMMON	1.8	1.8	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	1.7 V	TIN LEAD	BOTTOM	R-PBGA-B209	1.95 V	2.2 mm	250 MHz	14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0		22 mm	3 ns
K7N327245M-HC25	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	2.5	2.5	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	512KX72	512K	2.38 V	TIN LEAD	BOTTOM	R-PBGA-B209	2.625 V	2.2 mm	250 MHz	14 mm	Not Qualified	37748736 bit	2.375 V		e0	.01 Amp	22 mm	2.6 ns
K7N167245A-HC160	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K			BOTTOM	R-PBGA-B209	2.625 V	2.2 mm		14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE			22 mm	3.5 ns
K7Z163685A-HC20	Samsung	LATE-WRITE SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	1.8	1.8	36	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	TIN LEAD	BOTTOM	R-PBGA-B209	1.95 V	2.2 mm	200 MHz	14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0		22 mm	3.2 ns
K7N167245A-HC220	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K			BOTTOM	R-PBGA-B209	2.625 V	2.2 mm		14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE			22 mm	2.8 ns
K7N327245M-HC250	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		72	GRID ARRAY			1 mm	70 Cel		512KX72	512K			BOTTOM	R-PBGA-B209	2.625 V	2.2 mm		14 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE			22 mm	2.6 ns
K7Z163685A-HC250	Samsung	LATE-WRITE SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY			1 mm	70 Cel		512KX36	512K			BOTTOM	R-PBGA-B209	1.95 V	2.2 mm		14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE			22 mm	3 ns
K7N167245A-HC20	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	540 mA	262144 words	COMMON	2.5	2.5	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	2.38 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B209	2.625 V	2.2 mm	200 MHz	14 mm	Not Qualified	18874368 bit	2.375 V		e0	.06 Amp	22 mm	3.2 ns
K7N167245A-HC130	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K			BOTTOM	R-PBGA-B209	2.625 V	2.2 mm		14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE			22 mm	4.2 ns
K7N167245A-HC25	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	620 mA	262144 words	COMMON	2.5	2.5	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	2.38 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B209	2.625 V	2.2 mm	250 MHz	14 mm	Not Qualified	18874368 bit	2.375 V		e0	.06 Amp	22 mm	2.6 ns
K7N167245A-HC22	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	580 mA	262144 words	COMMON	2.5	2.5	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	2.38 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B209	2.625 V	2.2 mm	225 MHz	14 mm	Not Qualified	18874368 bit	2.375 V		e0	.06 Amp	22 mm	2.8 ns
K7Z163685A-HC30	Samsung	LATE-WRITE SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	1.8	1.8	36	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	TIN LEAD	BOTTOM	R-PBGA-B209	1.95 V	2.2 mm	300 MHz	14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0		22 mm	2.7 ns
K7N327245M-HC16	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	2.5	2.5	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	512KX72	512K	2.38 V	TIN LEAD	BOTTOM	R-PBGA-B209	2.625 V	2.2 mm	167 MHz	14 mm	Not Qualified	37748736 bit	2.375 V		e0	.01 Amp	22 mm	3.5 ns
K7N327245M-HC22	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	2.5	2.5	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	512KX72	512K	2.38 V	TIN LEAD	BOTTOM	R-PBGA-B209	2.625 V	2.2 mm	227 MHz	14 mm	Not Qualified	37748736 bit	2.375 V		e0	.01 Amp	22 mm	2.8 ns
K7N167245A-HC250	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K			BOTTOM	R-PBGA-B209	2.625 V	2.2 mm		14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE			22 mm	2.6 ns
K7Z327285M-HC25	Samsung	STANDARD SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	1.8	1.8	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	512KX72	512K	1.7 V	TIN LEAD	BOTTOM	R-PBGA-B209	1.95 V	2.2 mm	250 MHz	14 mm	Not Qualified	37748736 bit	1.7 V		e0		22 mm	2.1 ns
K7N167245A-HC16	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	262144 words	COMMON	2.5	2.5	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	2.38 V	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B209	2.625 V	2.2 mm	167 MHz	14 mm	Not Qualified	18874368 bit	2.375 V		e0	.06 Amp	22 mm	3.5 ns
K7Z167285A-HC30	Samsung	LATE-WRITE SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	COMMON	1.8	1.8	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	1.7 V	TIN LEAD	BOTTOM	R-PBGA-B209	1.95 V	2.2 mm	300 MHz	14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0		22 mm	2.7 ns
K7Z163688B-HC35	Samsung	LATE-WRITE SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY			1 mm	70 Cel		512KX36	512K			BOTTOM	R-PBGA-B209	1.95 V	2.2 mm		14 mm	Not Qualified	18874368 bit	1.7 V				22 mm	2.6 ns
K7Z167285A-HC27	Samsung	LATE-WRITE SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	COMMON	1.8	1.8	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	1.7 V	TIN LEAD	BOTTOM	R-PBGA-B209	1.95 V	2.2 mm	275 MHz	14 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0		22 mm	2.9 ns
K7N167245A-HC200	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K			BOTTOM	R-PBGA-B209	2.625 V	2.2 mm		14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE			22 mm	3.2 ns
K7N327245M-HC160	Samsung	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		72	GRID ARRAY			1 mm	70 Cel		512KX72	512K			BOTTOM	R-PBGA-B209	2.625 V	2.2 mm		14 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE			22 mm	3.5 ns
MT55L256Y72P-7.5H	Micron Technology	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3.465 V	2.2 mm		14 mm	Not Qualified	18874368 bit	3.135 V		e1		22 mm	4.2 ns
MT55V256V72P-6H	Micron Technology	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		TIN SILVER COPPER	BOTTOM	R-PBGA-B209	2.625 V	2.2 mm		14 mm	Not Qualified	18874368 bit	2.375 V		e1		22 mm	3.5 ns
MT55V256V72P-10H	Micron Technology	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		TIN SILVER COPPER	BOTTOM	R-PBGA-B209	2.625 V	2.2 mm		14 mm	Not Qualified	18874368 bit	2.375 V		e1		22 mm	5 ns
MT55V256V72F11H	Micron Technology	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		TIN SILVER COPPER	BOTTOM	R-PBGA-B209	2.625 V	2.2 mm		14 mm	Not Qualified	18874368 bit	2.375 V		e1		22 mm	8.5 ns
MT55L256Y72F-11H	Micron Technology	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3.465 V	2.2 mm		14 mm	Not Qualified	18874368 bit	3.135 V		e1		22 mm	8.5 ns
MT55V256V72F10H	Micron Technology	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		TIN SILVER COPPER	BOTTOM	R-PBGA-B209	2.625 V	2.2 mm		14 mm	Not Qualified	18874368 bit	2.375 V		e1		22 mm	7.5 ns
MT55L256Y72P-6H	Micron Technology	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3.465 V	2.2 mm		14 mm	Not Qualified	18874368 bit	3.135 V		e1		22 mm	3.5 ns
MT55V256V72P-7.5H	Micron Technology	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		TIN SILVER COPPER	BOTTOM	R-PBGA-B209	2.625 V	2.2 mm		14 mm	Not Qualified	18874368 bit	2.375 V		e1		22 mm	4.2 ns
MT55L256Y72F-10H	Micron Technology	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3.465 V	2.2 mm		14 mm	Not Qualified	18874368 bit	3.135 V		e1		22 mm	7.5 ns
MT55V256V72F12H	Micron Technology	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		TIN SILVER COPPER	BOTTOM	R-PBGA-B209	2.625 V	2.2 mm		14 mm	Not Qualified	18874368 bit	2.375 V		e1		22 mm	9 ns
MT55L256Y72F-12H	Micron Technology	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3.465 V	2.2 mm		14 mm	Not Qualified	18874368 bit	3.135 V		e1		22 mm	9 ns
MT55L256Y72P-10H	Micron Technology	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3.465 V	2.2 mm		14 mm	Not Qualified	18874368 bit	3.135 V		e1		22 mm	5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.