Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Defense Logistics Agency |
OTHER SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
4 |
IN-LINE |
2.54 mm |
125 Cel |
16KX4 |
16K |
-55 Cel |
TIN LEAD |
DUAL |
R-CDIP-T22 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
27.555 mm |
35 ns |
|||||||||||||||||||||||
Defense Logistics Agency |
OTHER SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
4 |
IN-LINE |
2.54 mm |
125 Cel |
16KX4 |
16K |
-55 Cel |
TIN LEAD |
DUAL |
R-CDIP-T22 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
27.555 mm |
35 ns |
|||||||||||||||||||||||
Defense Logistics Agency |
STANDARD SRAM |
MILITARY |
22 |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
4 |
IN-LINE |
125 Cel |
16KX4 |
16K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T22 |
Qualified |
65536 bit |
e0 |
55 ns |
|||||||||||||||||||||||||||||||
Fairchild Semiconductor |
STANDARD SRAM |
COMMERCIAL |
22 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
256 words |
5 |
5 |
4 |
IN-LINE |
DIP22,.4 |
SRAMs |
2.54 mm |
70 Cel |
OPEN-COLLECTOR |
256X4 |
256 |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T22 |
2A |
Not Qualified |
1024 bit |
e0 |
60 ns |
|||||||||||||||||||||||||
National Semiconductor |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
90 mA |
256 words |
5 |
5 |
4 |
IN-LINE |
DIP22,.4 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
256X4 |
256 |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T22 |
Not Qualified |
1024 bit |
e0 |
75 ns |
||||||||||||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
22 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
90 mA |
256 words |
5 |
5 |
4 |
IN-LINE |
DIP22,.4 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
256X4 |
256 |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDIP-T22 |
5.5 V |
5.08 mm |
10.16 mm |
Not Qualified |
1024 bit |
4.5 V |
e0 |
YES |
.09 Amp |
28.067 mm |
15 ns |
|||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
16384 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
16KX4 |
16K |
4.5 V |
-55 Cel |
DUAL |
R-XDIP-T22 |
Not Qualified |
65536 bit |
.00001 Amp |
30 ns |
|||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
4 |
IN-LINE |
2.54 mm |
125 Cel |
16KX4 |
16K |
-55 Cel |
DUAL |
R-XDIP-T22 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
29.335 mm |
35 ns |
|||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
16384 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
16KX4 |
16K |
4.5 V |
-55 Cel |
DUAL |
R-XDIP-T22 |
Not Qualified |
65536 bit |
.00001 Amp |
30 ns |
||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
CHIP CARRIER |
LCC22(UNSPEC) |
SRAMs |
125 Cel |
3-STATE |
64KX1 |
64K |
2 V |
-55 Cel |
QUAD |
1 |
R-CQCC-N22 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
.0001 Amp |
45 ns |
||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
1 |
CHIP CARRIER |
1.27 mm |
125 Cel |
64KX1 |
64K |
-55 Cel |
TIN LEAD |
QUAD |
R-CQCC-N22 |
5.5 V |
1.981 mm |
7.366 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
13.446 mm |
70 ns |
||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
22 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
256 words |
SEPARATE |
4 |
IN-LINE |
DIP22,.4 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
256X4 |
256 |
0 Cel |
DUAL |
R-PDIP-T22 |
Not Qualified |
1024 bit |
NOT SPECIFIED |
NOT SPECIFIED |
650 ns |
||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
4 |
CHIP CARRIER |
1.27 mm |
125 Cel |
16KX4 |
16K |
-55 Cel |
TIN LEAD |
QUAD |
R-CQCC-N22 |
5.5 V |
1.905 mm |
7.366 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
12.446 mm |
55 ns |
||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
130 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
CHIP CARRIER |
LCC22(UNSPEC) |
SRAMs |
125 Cel |
3-STATE |
64KX1 |
64K |
2 V |
-55 Cel |
QUAD |
1 |
R-CQCC-N22 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
.0001 Amp |
25 ns |
||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
-55 Cel |
DUAL |
R-XDIP-T22 |
Not Qualified |
65536 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00001 Amp |
55 ns |
|||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
4 |
CHIP CARRIER |
1.27 mm |
125 Cel |
16KX4 |
16K |
-55 Cel |
TIN LEAD |
QUAD |
R-CQCC-N22 |
5.5 V |
1.905 mm |
7.366 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
12.446 mm |
45 ns |
||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
130 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
64KX1 |
64K |
2 V |
-55 Cel |
DUAL |
1 |
R-CDIP-T22 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
.0001 Amp |
25 ns |
||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
4 |
IN-LINE |
2.54 mm |
125 Cel |
16KX4 |
16K |
-55 Cel |
DUAL |
R-XDIP-T22 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
29.335 mm |
45 ns |
|||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
120 mA |
16384 words |
COMMON |
5 |
5 |
4 |
CHIP CARRIER |
LCC22(UNSPEC) |
SRAMs |
125 Cel |
3-STATE |
16KX4 |
16K |
2 V |
-55 Cel |
QUAD |
1 |
R-CQCC-N22 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
.0001 Amp |
35 ns |
|||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
105 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
-55 Cel |
GOLD |
DUAL |
R-CDIP-T22 |
5.5 V |
4.521 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
e4 |
.02 Amp |
27.94 mm |
70 ns |
|||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
SERIAL |
ASYNCHRONOUS |
90 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
-55 Cel |
DUAL |
R-CDIP-T22 |
5.5 V |
3.89 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
.02 Amp |
27.94 mm |
35 ns |
|||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
4 |
IN-LINE |
2.54 mm |
125 Cel |
16KX4 |
16K |
-55 Cel |
DUAL |
R-XDIP-T22 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
29.335 mm |
35 ns |
|||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
16384 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
16KX4 |
16K |
2 V |
-55 Cel |
DUAL |
1 |
R-CDIP-T22 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
.0001 Amp |
35 ns |
||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
90 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
64KX1 |
64K |
2 V |
-55 Cel |
DUAL |
R-CDIP-T22 |
5.5 V |
4.521 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
.001 Amp |
27.94 mm |
45 ns |
|||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
22 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
256 words |
SEPARATE |
4 |
IN-LINE |
DIP22,.4 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
256X4 |
256 |
0 Cel |
DUAL |
R-PDIP-T22 |
Not Qualified |
1024 bit |
NOT SPECIFIED |
NOT SPECIFIED |
450 ns |
||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
22 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
256 words |
SEPARATE |
4 |
IN-LINE |
DIP22,.4 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
256X4 |
256 |
0 Cel |
DUAL |
R-XDIP-T22 |
Not Qualified |
1024 bit |
NOT SPECIFIED |
NOT SPECIFIED |
650 ns |
||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
4 |
IN-LINE |
2.54 mm |
125 Cel |
16KX4 |
16K |
-55 Cel |
DUAL |
R-XDIP-T22 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
29.335 mm |
45 ns |
|||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
90 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
CHIP CARRIER |
LCC22,.3X.5 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
-55 Cel |
QUAD |
R-CQCC-N22 |
Not Qualified |
65536 bit |
.02 Amp |
35 ns |
||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
-55 Cel |
DUAL |
R-XDIP-T22 |
Not Qualified |
65536 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00001 Amp |
30 ns |
|||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
22 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
256 words |
SEPARATE |
4 |
IN-LINE |
DIP22,.4 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
256X4 |
256 |
0 Cel |
DUAL |
R-XDIP-T22 |
Not Qualified |
1024 bit |
NOT SPECIFIED |
NOT SPECIFIED |
450 ns |
||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
4 |
CHIP CARRIER |
125 Cel |
16KX4 |
16K |
-55 Cel |
GOLD |
QUAD |
R-CQCC-N22 |
Not Qualified |
65536 bit |
e4 |
55 ns |
|||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
130 mA |
16384 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
16KX4 |
16K |
2 V |
-55 Cel |
DUAL |
1 |
R-CDIP-T22 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
.0001 Amp |
25 ns |
||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
90 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
64KX1 |
64K |
2 V |
-55 Cel |
DUAL |
R-CDIP-T22 |
5.5 V |
4.521 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
.001 Amp |
27.94 mm |
55 ns |
|||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
22 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
16384 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
0 Cel |
DUAL |
R-PDIP-T22 |
Not Qualified |
65536 bit |
.01 Amp |
30 ns |
||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
4 |
CHIP CARRIER |
125 Cel |
16KX4 |
16K |
-55 Cel |
QUAD |
R-CQCC-N22 |
Not Qualified |
65536 bit |
35 ns |
|||||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
22 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
0 Cel |
DUAL |
R-PDIP-T22 |
Not Qualified |
65536 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.01 Amp |
20 ns |
|||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
1 |
IN-LINE |
2.54 mm |
125 Cel |
64KX1 |
64K |
-55 Cel |
GOLD |
DUAL |
R-CDIP-T22 |
5.5 V |
4.521 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
e4 |
27.94 mm |
70 ns |
||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
16384 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
16KX4 |
16K |
2 V |
-55 Cel |
DUAL |
1 |
R-CDIP-T22 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
.0001 Amp |
45 ns |
||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
4 |
IN-LINE |
2.54 mm |
125 Cel |
16KX4 |
16K |
-55 Cel |
DUAL |
R-XDIP-T22 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
29.335 mm |
55 ns |
|||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
90 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
64KX1 |
64K |
2 V |
-55 Cel |
GOLD |
DUAL |
R-CDIP-T22 |
5.5 V |
4.521 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
e4 |
.001 Amp |
27.94 mm |
70 ns |
|||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
22 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
100 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
0 Cel |
DUAL |
R-PDIP-T22 |
Not Qualified |
65536 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.02 Amp |
30 ns |
|||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
22 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
80 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T22 |
Not Qualified |
65536 bit |
e0 |
.015 Amp |
35 ns |
||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
1 |
IN-LINE |
2.54 mm |
125 Cel |
64KX1 |
64K |
-55 Cel |
GOLD |
DUAL |
R-CDIP-T22 |
5.5 V |
4.521 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
e4 |
27.94 mm |
70 ns |
||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
64KX1 |
64K |
2 V |
-55 Cel |
DUAL |
1 |
R-CDIP-T22 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
.0001 Amp |
45 ns |
||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
64KX1 |
64K |
2 V |
-55 Cel |
DUAL |
1 |
R-CDIP-T22 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
.0001 Amp |
45 ns |
|||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
130 mA |
16384 words |
COMMON |
5 |
5 |
4 |
CHIP CARRIER |
LCC22(UNSPEC) |
SRAMs |
125 Cel |
3-STATE |
16KX4 |
16K |
2 V |
-55 Cel |
QUAD |
1 |
R-CQCC-N22 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
.0001 Amp |
25 ns |
|||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
16384 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
16KX4 |
16K |
4.5 V |
-55 Cel |
DUAL |
R-XDIP-T22 |
Not Qualified |
65536 bit |
.00001 Amp |
40 ns |
||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
22 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
4 |
IN-LINE |
2.54 mm |
125 Cel |
16KX4 |
16K |
-55 Cel |
DUAL |
R-XDIP-T22 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
29.335 mm |
55 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.