22 SRAM 1,012

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
5962-8601503XX	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-55 Cel		DUAL		R-CDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V						.02 Amp	27.94 mm	45 ns
SMJ61CD64-25JDM	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	2 V	-55 Cel		DUAL	1	R-CDIP-T22	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO	.0001 Amp		25 ns
SM61CD64-55JD	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-55 Cel		DUAL		R-XDIP-T22				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED		.00001 Amp		55 ns
5962-8601507XA	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	125 Cel		64KX1	64K		-55 Cel	GOLD	DUAL		R-CDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e4					27.94 mm	70 ns
SMJ64C64-55JD	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-55 Cel		DUAL		R-XDIP-T22				Not Qualified	65536 bit							.00001 Amp		55 ns
5962-8601505ZX	Texas Instruments	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-55 Cel		QUAD		R-CQCC-N22				Not Qualified	65536 bit							.02 Amp		55 ns
TMS6788-15N	Texas Instruments	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel		DUAL		R-PDIP-T22				Not Qualified	65536 bit							.01 Amp		15 ns
SMJ64C64-25JDM	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel		DUAL	1	R-CDIP-T22	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO	.0001 Amp		25 ns
SMJ64C64-25FGM	Texas Instruments	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	130 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC22(UNSPEC)	SRAMs		125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel		QUAD	1	R-CQCC-N22	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO	.0001 Amp		25 ns
SMJ64C64-45FGM	Texas Instruments	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC22(UNSPEC)	SRAMs		125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel		QUAD	1	R-CQCC-N22	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO	.0001 Amp		45 ns
SM61CD64-35FGM	Texas Instruments	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22(UNSPEC)	SRAMs		125 Cel	3-STATE	64KX1	64K	2 V	-55 Cel		QUAD	1	R-CQCC-N22	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO	.0001 Amp		35 ns
SM61CD64-40JD	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-55 Cel		DUAL		R-XDIP-T22				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED		.00001 Amp		40 ns
SMJ64C64-45JDM	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel		DUAL	1	R-CDIP-T22	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO	.0001 Amp		45 ns
SM61CD64-35JDM	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	2 V	-55 Cel		DUAL	1	R-CDIP-T22	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO	.0001 Amp		35 ns
TMS6788-25N	Texas Instruments	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel		DUAL		R-PDIP-T22				Not Qualified	65536 bit							.01 Amp		25 ns
TMS4039JL	Texas Instruments	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	256 words	SEPARATE			4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		0 Cel		DUAL		R-XDIP-T22				Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED				1000 ns
SM61CD64-30JD	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-55 Cel		DUAL		R-XDIP-T22				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED		.00001 Amp		30 ns
5962-8601505XX	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-55 Cel		DUAL		R-CDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V						.02 Amp	27.94 mm	55 ns
SMJ64C64-40JD	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-55 Cel		DUAL		R-XDIP-T22				Not Qualified	65536 bit							.00001 Amp		40 ns
SM61CD64-25FGM	Texas Instruments	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22(UNSPEC)	SRAMs		125 Cel	3-STATE	64KX1	64K	2 V	-55 Cel		QUAD	1	R-CQCC-N22	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO	.0001 Amp		25 ns
5962-8685922ZX	Texas Instruments	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	QUAD		R-CQCC-N22	5.5 V	1.905 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN	e0					12.446 mm	45 ns
TMS6787-25N	Texas Instruments	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel		DUAL		R-PDIP-T22				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED		.02 Amp		25 ns
5962-01-160-6958	Texas Instruments	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	256 words	SEPARATE			4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		0 Cel		DUAL		R-XDIP-T22				Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED				450 ns
TMS6787-15N	Texas Instruments	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel		DUAL		R-PDIP-T22				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED		.01 Amp		15 ns
5962-8601503ZX	Texas Instruments	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-55 Cel		QUAD		R-XQCC-N22				Not Qualified	65536 bit							.02 Amp		45 ns
SMJ64C64-35JDM	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel		DUAL	1	R-CDIP-T22	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO	.0001 Amp		35 ns
SMJ61CD64-35JDM	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	2 V	-55 Cel		DUAL	1	R-CDIP-T22	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO	.0001 Amp		35 ns
SM64C64-55JD	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-55 Cel		DUAL		R-XDIP-T22				Not Qualified	65536 bit							.00001 Amp		55 ns
5962-8685923ZX	Texas Instruments	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		16KX4	16K		-55 Cel		QUAD		R-CQCC-N22	5.5 V	1.905 mm	7.366 mm	Not Qualified	65536 bit	4.5 V							12.446 mm	35 ns
TMS4039NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	256 words	SEPARATE			4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		0 Cel		DUAL		R-PDIP-T22				Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED				1000 ns
5962-8601504ZX	Texas Instruments	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	125 Cel	3-STATE	64KX1	64K	2 V	-55 Cel		QUAD		R-CQCC-N22	5.5 V	1.981 mm	7.366 mm	Not Qualified	65536 bit	4.5 V						.001 Amp	13.446 mm	45 ns
5962-8601507ZX	Texas Instruments	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		1	CHIP CARRIER			1.27 mm	125 Cel		64KX1	64K		-55 Cel	GOLD	QUAD		R-CQCC-N22	5.5 V	1.981 mm	7.366 mm	Not Qualified	65536 bit	4.5 V		e4					13.446 mm	70 ns
5962-8601506ZX	Texas Instruments	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	125 Cel	3-STATE	64KX1	64K	2 V	-55 Cel		QUAD		R-CQCC-N22	5.5 V	1.981 mm	7.366 mm	Not Qualified	65536 bit	4.5 V						.001 Amp	13.446 mm	55 ns
SM61CD64-45FGM	Texas Instruments	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22(UNSPEC)	SRAMs		125 Cel	3-STATE	64KX1	64K	2 V	-55 Cel		QUAD	1	R-CQCC-N22	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO	.0001 Amp		45 ns
TMS4039-2NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	256 words	SEPARATE			4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		0 Cel		DUAL		R-PDIP-T22				Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED				450 ns
SM64C64-45FGM	Texas Instruments	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC22(UNSPEC)	SRAMs		125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel		QUAD	1	R-CQCC-N22	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO	.0001 Amp		45 ns
SMJ64C64-35FGM	Texas Instruments	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC22(UNSPEC)	SRAMs		125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel		QUAD	1	R-CQCC-N22	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO	.0001 Amp		35 ns
SMJ61CD64-35FGM	Texas Instruments	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22(UNSPEC)	SRAMs		125 Cel	3-STATE	64KX1	64K	2 V	-55 Cel		QUAD	1	R-CQCC-N22	5.5 V			Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN		NOT SPECIFIED	NOT SPECIFIED	NO	.0001 Amp		35 ns
5962-8601508XC	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	125 Cel		64KX1	64K		-55 Cel	GOLD	DUAL		R-CDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e4					27.94 mm	70 ns
SMJ61CD64-40JD	Texas Instruments	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-55 Cel		DUAL		R-XDIP-T22				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED		.00001 Amp		40 ns
TMS6788-20N	Texas Instruments	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel		DUAL		R-PDIP-T22				Not Qualified	65536 bit							.01 Amp		20 ns
IMS1620P-70L	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T22				Not Qualified	65536 bit			e0				.00025 Amp		70 ns
IMS1605S-15	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.002 Amp	27.94 mm	15 ns
IMS1620AS-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T22				Not Qualified	65536 bit			e0				.014 Amp		35 ns
5962-8601503XA	STMicroelectronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	125 Cel		64KX1	64K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T22	5.5 V	3.89 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0					27.94 mm	45 ns
IMS1600W-30	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	77 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel	TIN LEAD	QUAD	1	R-CQCC-N22	5.5 V	1.981 mm	7.366 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.014 Amp	13.446 mm	30 ns
IMS1620W-55S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	QUAD		R-XQCC-N22				Not Qualified	65536 bit			e0				.014 Amp		55 ns
IMS1600P-35S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	77 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T22				Not Qualified	65536 bit			e0				.014 Amp		35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.